FSB560 / FSB560A
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
°C-55 to +150Operating and Storage Junction Temperature Range
TJ, Tstg
A2Collector Current - Continuous
IC
V5Emitter-Base Voltage
VEBO
V80Collector-Base Voltage
VCBO
V60Collector-Emitter Voltage
VCEO
Units
FSB560/FSB560A
ParameterSymbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
°C/W250Thermal Resistance, Junction to Ambient
RθJA
mW500Total Device Dissipation
PD
FSB560/FSB560A
Units
Max
Characteristic
Symbol
FSB560/FSB560A, Rev B1
2001 Fairchild Semiconductor Corporation
SuperSOTTM-3 (SOT-23)
FSB560/FSB560A
C
E
B
- 75
IC = 100 mA,VCE = 5 V, f=100MHz
Transition Frequency
fT
pF30
VCB = 10 V, IE = 0, f = 1MHz
Output Capacitance
Cobo
SMALL SIGNAL CHARACTERISTICS
V1
IC = 1 A, VCE = 2 V
Base-Emitter On Voltage
VBE(on)
V1.25
IC = 1 A, IB = 100 mA
Base-Emitter Saturation Voltage
VBE(sat)
mV300
350
300
IC = 1 A, IB = 100 mA
IC = 2 A, IB=200 mA FSB560
FSB560A
Collector-Emitter Saturation Voltage
VCE(sat)
-
300
550
70
100
250
80
40
IC = 100 mA, VCE = 2 V
IC=500mA, VCE =2V FSB560
FSB560A
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
DC Current Gain
hFE
ON
CHARACTERISTICS
*
nA
100
VEB = 4V
Emitter Cutoff Current
IEBO
nA
uA
100
10
VCB = 30 V
VCB = 30 V, TA=100°C
Collector Cutoff Current
ICBO
V5
IE = 100 µA
Emitter-Base Breakdown Voltage
BVEBO
V80
IC = 100 µA
Collector-Base Breakdown Voltage
BVCBO
V60
IC = 10 mA
Collector-Emitter Breakdown Voltage
BVCEO
OFF CHARACTERISTICS
UnitsMaxMinTest ConditionsParameterSymbol
NPN Low Saturation Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FSB560/FSB560A, Rev B1
1998 Fairchild Semiconductor Corporation
FSB560/FSB560A
Typical Characteristics
Current Ga i n vs. Col lec t or Cu rr ent
0 0.5 1 1.5 2 2.5 3 3.5
0
100
200
300
400
500
600
700
I - COLLECTOR CURRENT (A)
H - CURRENT G AIN
C
FE
25° C
12 5°C
- 40° C
V = 2.0V
ce
Collector- Emitter Saturati on
Volt age vs Collect or Cu r rent
0.001 0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (A)
V - COLLEC TOR-EMITT ER VOLTAGE (V)
C
CESAT
- 40°C
25°C
12 5°C
β = 10
Base-Em itter Sat uration
Volt age vs Col lector C urren t
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - CO LLEC TOR CURR ENT ( A)
V -BAS E- EM ITTER SATURATION V OLT AGE(V)
C
BESAT
25 °C
- 40 °C
125 °C
β = 10
Base-E m itter On Voltage vs.
Collector Current
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLL ECTOR CU RRENT (A)
V - B ASE-EMIT TER ON VO LTAGE ( V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
In put/Output Capacitance vs.
Reverse Bia s Voltage
0.1 0.2 0.5 1 2 5 10 20 50 100
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
CAPACIT ANCE (pf)
CE
f = 1.0 MHz
C
ibo
C
obo
FSB560/FSB560A, Rev B1
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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