LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 1 of 6
2N3439L thru 2N3440L
Available on
commercial
versions
NPN LOW POWER SI L ICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
Qualified Levels:
JAN, J AN TX,
JANTXV and JAN S
DESCRIPTION
Th is family of high-frequen cy, epitaxial pl anar transistors featur e low saturation voltage.
These devices are al so available i n TO -39 and l ow p r ofi le U4 and UA packaging. Microsemi
als o of fers numer ous other transist or pr odu cts to m eet hi gher and lower power ratings wi th
various switching speed requirements in both through-hol e and sur fac e-moun t packages.
TO-5 Package
Also available in:
TO-39 (TO-205AD)
package
(leaded)
2N3439 – 2N3440
U4 package
(surface mount)
2N3439U4 – 2N3440U4
UA package
(surface mount)
2N3439UA - 2N3440UA
Important: For the latest infor mation, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3439L through 2N3440L series.
• JAN, JANTX, JANTXV, and JANS quali fications are available per MIL-PRF-19500/368.
• RoHS compliant versions available (commercial grade only).
• VCE(sat) = 0.5 V @ IC = 50 mA.
• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.
• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.
APPLICATI ONS / BENE F ITS
• General purpose transis tors for medium power applications requiring high frequenc y switching and
low package profil e.
• Military and other high-reliability applications.
MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3439L 2N3440L Unit
Collector-Emitter Voltage VCEO 350 250 V
Collector-Base Voltage VCBO 450 300 V
Emitter-Base Voltage VEBO 7.0 V
Collector Current IC 1.0 A
Total Power Dissipation
@ T A = +25 °C
(1)
@ T C = +25 °C (2) PD 0.8
5.0 W
Operating & Storage J unction Temperature Range
T
J
, T
stg
°C
Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C.
2. Derate linearly @ 28.5 mW/°C for TC > +25 °C
LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 2 of 6
2N3439L thru 2N3440L
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Tin/lead plate or RoHS compliant matte/tin (commercial grade onl y) over nickel.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: NPN (see pac kage outline).
• WEIGHT: A pproximately 1.14 grams.
• See Package Dimensions on last page.
PART NOMENCLAT URE
JAN 2N3439 L (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Longer Lead Length
SYMBOLS & DEFI NITIONS
Symbol
Definition
Cobo
Common-base open-circ uit output capacit ance.
ICEO
Collect or c utoff cur r ent, base open.
ICEX
Collect or c utoff cur r ent, c irc uit bet ween base and emitter.
IEBO
Emitter cutoff current , c ollect or open.
hFE
Common-emitter st ati c forward curr ent transfer ratio.
VCEO
Collector-emitter voltage, bas e open .
V
CBO
Collector-emitter voltage, emi tter open.
VEBO
Emitter-base vo lt age, coll ector open.
LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 3 of 6
2N3439L thru 2N3440L
ELECTRICAL CHARACT ERISTI CS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emi tter Br eakdown Vol tage
V(BR)CEO
350
250
V
I
C
= 10 mA
RBB1 = 470 Ω; VBB1 = 6 V
L = 25 mH (min); f = 30 – 60 Hz
2N3439L
2N3440L
Collector-Emi tter C ut off Curr ent
ICEO
2.0
2.0 µA
V
CE
= 300 V
VCE = 200 V
2N3439L
2N3440L
Emitter-B ase Cutoff Cur r ent
V
EB
= 7.0 V
IEBO 10 µA
Collector-Emi tter C ut off Curr ent
ICEX
5.0
5.0
µA
V
CE
= 450 V, V
BE
= -1.5 V
VCE = 300 V, VBE = -1.5 V
2N3439L
2N3440L
Collector-Bas e C ut off Cur r ent
ICBO
2.0
2.0
5.0
5.0
µA
V
CB
= 360 V
VCB = 250 V
VCB = 450 V
VCB = 300 V
2N3439L
2N3440L
2N3439L
2N3440L
ON CHARACTERISTI CS (1)
Paramete r s / Test Conditions Symbol Min. Max. Unit
Forward-Cur rent Transfer R atio
IC = 20 mA, VCE = 10 V
IC = 2.0 m A, VCE = 10 V
IC = 0.2 m A, VCE = 10 V hFE
40
30
10
160
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 4. 0 mA VCE(sat) 0.5 V
Base-Emi tter Saturati on Vol tage
IC = 50 mA, IB = 4. 0 mA VBE(sat) 1.3 V
DYNAMIC CHARACT ERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Magnitude of C ommon Emitter Small-Signa l Shor t-
Circuit Forward Cu rrent Trans fe r Ratio
IC = 10 mA, VCE = 10 V, f = 5.0 MHz |hfe| 3.0 15
Forward Current Trans fer Ratio
IC = 5.0 mA, VCE = 10 V, f = 1.0 kHz hfe 25
O utput Capaci tance
VCB = 10 V, IE = 0, 10 0 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF
I nput C apacitance
VCB = 5.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
NOTES: (1) Pu lse Test: Pul se Width = 300 µs, duty cycle ≤ 2.0%
LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 4 of 6
2N3439L thru 2N3440L
ELECTRICAL CHARACTERISTICS (TA = + 25°C, unless otherwise not ed) continued
SWITCHING CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton
1.0 µs
Turn-O ff Tim e
VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff
10 µs
SAFE OPER ATING AREA (See graph below and also r efer ence test met hod 3053 of
MIL-STD-750.)
DC Te sts
TC = +2 5 °C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 V, IC = 1.0 A
B oth Types
Test 2
VCE = 350 V, IC = 14 mA
2N3439L
Test 3
VCE = 250 V, IC = 20 mA
2N3440L
VCE – Col lector to Emitt er Vol tage ( V)
Max i mum Safe Operating gr aph (c onti nuous dc)
I
C
– Collector Current (mA)
LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 5 of 6
2N3439L thru 2N3440L
GRAPHS
TC (oC) (Case)
FIGURE 1
Temperature-Power Derating Curve
NOTES: Thermal Resistan ce Junction to Case = 30.0 oC/W
Ma x F inish -Alloy Temp = 175.0 oC
.110-5 .110-4 .110-3 .110-2 .110-1 0.1 1 10 100
TIME (s)
FIGURE 2
Maximum Ther mal Impedan ce
NOTE: TC = +25 °C, PT = 5.0 W, thermal resistance Rθ JC = 30 °C /W, stee l.
DC Operation Maximum Rating (W)
THETA (oC/W)
LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 6 of 6
2N3439L thru 2N3440L
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material c ondition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diam eter is uncontrolled in
and beyond LL minimum.
9. All three lead s.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both ins ide corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, l ead 3 = collector.
14. For transistor types 2N3439L and 2N3440L (TO-5), dimension LL = 1.5 inc hes (38.10 mm) min. and 1.75 inches (44.45 mm)
max.
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
6
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
7
LD
.016
.019
0.41
0.48
8,9
LL
See note 14
LU
.016
.019
0.41
0.48
8,9
L1 .050 1.27 8,9
L2 .250 6.35 8,9
P
.100
2.54
7
Q
.030
0.76
5
TL
.029
.045
0.74
1.14
3,4
TW
.028
.034
0.71
0.86
3
r
.010
0.25
10
α
45° TP
45° TP
7