PD - 96160 IRLML6401GPbF l l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free Halogen-Free HEXFET(R) Power MOSFET * VDSS = -12V ' RDS(on) = 0.05 6 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. Micro3TM A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 8.0 -55 to + 150 V A W W/C mJ V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 75 100 C/W 1 07/22/08 IRLML6401GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -12 --- --- V VGS = 0V, ID = -250A --- -0.007 --- V/C Reference to 25C, ID = -1mA --- --- 0.050 VGS = -4.5V, ID = -4.3A --- 0.085 VGS = -2.5V, ID = -2.5A --- 0.125 VGS = -1.8V, ID = -2.0A -0.40 -0.55 -0.95 V VDS = VGS, ID = -250A 8.6 --- --- S VDS = -10V, ID = -4.3A --- --- -1.0 VDS = -12V, VGS = 0V A --- --- -25 VDS = -9.6V, VGS = 0V, TJ = 55C --- --- -100 VGS = -8.0V nA --- --- 100 VGS = 8.0V --- 10 15 ID = -4.3A --- 1.4 2.1 nC VDS = -10V --- 2.6 3.9 VGS = -5.0V --- 11 --- VDD = -6.0V ns --- 32 --- ID = -1.0A --- 250 --- RD = 6.0 --- 210 --- RG = 89 --- 830 --- VGS = 0V --- 180 --- pF VDS = -10V --- 125 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- -1.3 --- --- -34 --- --- --- --- 22 8.0 -1.2 33 12 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25C, L = 3.5mH RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401GPbF 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V 10 1 -1.0V 0.1 20s PULSE WIDTH Tj = 25C TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP 10 1 -1.0V 0.1 20s PULSE WIDTH Tj = 150C 0.01 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current ( ) T J = 25C T J = 150C 1.0 VDS = -12V 20s PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100.0 0.1 10 -VDS, Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 10.0 1 ID = -4.3A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML6401GPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss Crss 200 VDS =-10V 6 4 2 0 1 10 ID = -4.3A 8 0 100 0 4 12 16 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -IID , Drain Current (A) 100 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 -VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 8 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) -ISD , Reverse Drain Current (A) C, Capacitance(pF) 1000 10 -VGS , Gate-to-Source Voltage (V) 1200 1.8 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML6401GPbF EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature 80 ID -1.9A -3.4A BOTTOM -4.3A TOP 60 40 20 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on) , Drain-to -Source Voltage ( ) 0.10 0.09 0.08 0.07 0.06 0.05 Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0 RDS ( on ) , Drain-to-Source On Resistance ( ) IRLML6401GPbF 0.20 VGS = -1.8V VGS = -2.5V 0.15 0.10 VGS = -4.5V 0.05 0.00 0 10 -VGS, Gate -to -Source Voltage ( V ) 20 30 40 -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current -VGS(th) Gate threshold Voltage (V) 0.8 0.7 ID = -250A 0.6 0.5 0.4 0.3 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 www.irf.com IRLML6401GPbF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) A 6 DIMENSIONS 5 D SYMBOL 3 6 E E1 1 B 5 A A1 A2 b c D E E1 e e1 L L1 L2 0.15 [0.006] M C B A 2 e e1 A A2 H C 4 L1 c 0.10 [0.004] C A1 L2 3X b 3X L 0.20 [0.008] M C B A 7 Recommended Footprint 0.950 INCHES MIN MAX MIN MAX 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 %6& %6& 0.0004 0 REF BSC 8 NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 0.972 0.802 MILLIMETERS 2.742 1.900 Micro3 (SOT-23 / TO-236AB) Part Marking Information : ,)35(&('('%</$67',*,72)&$/(1'$5<($5 Micro3 / SOT-23 Package Marking Y = YEAR W = WEEK PART NUMBER A YW LC HALOGEN FREE INDICATOR LOT CODE PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free <($5 < :25. :((. : $ % & ' ; < = : ,)35(&('('%<$/(77(5 <($5 < $ % & ' ( ) * + . :25. :((. : $ % & ' ; < = Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com 7 IRLML6401GPbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2008 8 www.irf.com