MUR810 THRU MUR860
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Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B156
Rev.2.1, 29-Nov-14
Ultra-Fast Recovery Rectifier Diodes
Features
● High frequency operation
● High surge forward current capability
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
● Package: TO-220AC
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT MUR810 MUR815 MUR820 MUR840 MUR860
Device marking code MUR810 MUR815 MUR820 MUR840 MUR860
Repetitive Peak Reverse Voltage VRRM V 100 150 200 400 600
Average Rectified Output Current
@60Hz half sine-wave, R-load, Tc(FIG.1) Io A 8
Surge(Non-repetitive)Forward Current
@60Hz half sine-wave,1 cycle, Ta=25℃ IFSM A 100
Current Squared Time @1ms≤t≤8.3ms Tj=25℃ I2t A2s 41
Storage Temperature Tstg ℃ -55 ~ +150
Junction Temperature Tj ℃ -55 ~ +150
■Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT TEST CONDIT IONS MUR810 MUR815 MUR820 MUR840 MUR860
Maximum instantaneous forward
voltage drop per diode VFM V IFM=8.0A 0.975 1.3 1.5
Maximum DC reverse current at
rated DC blocking voltage per diode
IRRM1
uA
VRM=VRRM
Ta=25℃ 10
IRRM2 VRM=VRRM
Ta=125℃ 500
Reverse Recovery Time Trr ns IF=0.5A IRM=1A
IRR=0.25A 50
■Thermal Characteristics (Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT MUR810 MUR815 MUR820 MUR840 MUR860
Thermal Resistance Between junction and case RθJ-C ℃/W 2.0
COMPLIANT
RoHS