© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 13
1Publication Order Number:
BD243B/D
BD243B, BD243C (NPN)
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
•Collector − Emitter Saturation Voltage −
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
•Collector Emitter Sustaining Voltage −
VCEO(sus) = 80 Vdc (Min) − BD243B, BD244B
= 100 Vdc (Min) − BD243C, BD244C
•High Current Gain Bandwidth Product
fT= 3.0 MHz (Min) @ IC = 500 mAdc
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
VCEO 80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
VCB 80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous
− Peak
IC6
10
Adc
Base Current IB2.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD65
0.52
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
TO−220AB
CASE 221A−09
STYLE 11
http://onsemi.com
MARKING DIAGRAM
BD24xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
23
BD24xyG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
BD243B, BD243C (NPN) BD244B, BD244C (PNP)
http://onsemi.com
2
80
60
40
20
00 20 40 60 80 100 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) BD243B, BD244B
BD243C, BD244C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.7
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0) BD243B, BD244B
(VCE = 100 Vdc, VEB = 0) BD243C, BD244C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICES
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
400
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
30
15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
1. Pulse Test: Pulsewidth v 300 ms, Duty Cycle v 2.0%.
2. fT = hfe • ftest
BD243B, BD243C (NPN) BD244B, BD244C (PNP)
http://onsemi.com
3
Figure 2. Switching Time Test Circuit
2.0
0.06
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
1.0
0.7
0.5
0.3
0.1
0.07
0.02 0.1 0.2 0.4 0.6 2.0 6.0
td @ VBE(off) = 5.0 V
TJ = 25°C
VCC = 30 V
IC/IB = 10
+ 11 V
0
VCC
- 30 V
SCOPE
RB
- 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
tr
0.03
0.05
1.0 4.0
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 ms
- 9.0 V D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.2
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(max) = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
CURVES APPLY BELOW RATED VCEO
10
5.0
Figure 5. Active Region Safe Operating Area
5.0
1.0
0.1 10 20 60 100
TJ = 150°C
BD243B, BD244B
BD243C, BD244C
5.0 ms
0.5 ms
0.2
2.0
0.5
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
0.3
40 80
1.0
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
BD243B, BD243C (NPN) BD244B, BD244C (PNP)
http://onsemi.com
4
5.0
0.06
Figure 6. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05 0.1 0.2 0.4 0.6 2.0 6.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
1.0 4.0
0.7
3.0
tf
300
0.5
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 3.0 5.0 20 30 5010
CAPACITANCE (pF)
200
100
70
50
TJ = 25°C
Cib
Cob
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
0.06
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0 0.1 0.2 0.3 0.4 0.6 1.0 2.0 6.0
100
50
30
10
2.0
0.06
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3 0.6 2.0 3.0 4.0 6.0
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
2.0
10
Figure 10. “On” Voltages
IB, BASE CURRENT (mA)
020 30 50 100 200 300 500 100
0
1.6
1.2
0.8
0.4
IC = 1.0 A
TJ = 25°C
2.5 A 5.0 A
300
70
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
+2.5
0.06
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 3.0 0.4 0.6
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
qVB FOR VBE
*qVC FOR VCE(sat)
*APPLIES FOR IC/IB ≤5.0
7.0
0.1 1.00.4
1.6
1.2
VBE @ VCE = 4.0 V
+1.0
2.00.1
200
20
4.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 55°C to + 25°C
BD243B, BD243C (NPN) BD244B, BD244C (PNP)
http://onsemi.com
5
103
Figure 12. Collector Cut-Off Region
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
102
101
100
10-1
, COLLECTOR CURRENT (A)μIC
10-2
10-3
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
VCE = 30 V
TJ = 150°C
100°C
REVERSE FORWARD
IC = ICES
10M
Figure 13. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
20 40 60 80 100 120 140 16
0
1.0M
100k
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OH
M
VCE = 30 V
IC = 10 x ICES
IC ≈ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
IC = 2 x ICES
25°C
+0.7
10k
1.0k
0.1k
ORDERING INFORMATION
Device Package Shipping†
BD243B TO−220
50 Units / Rail
BD243BG TO−220
(Pb−Free)
BD243C TO−220
50 Units / Rail
BD243CG TO−220
(Pb−Free)
BD244B TO−220
50 Units / Rail
BD244BG TO−220
(Pb−Free)
BD244C TO−220
50 Units / Rail
BD244CG TO−220
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BD243B, BD243C (NPN) BD244B, BD244C (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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BD243B/D
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