HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 400 mW * Maximum Voltages and Currents (Ta=25C) BVDSS Drain to Source Voltage......................................................................................... 60 V BVGSS Gate to Source Voltage ......................................................................................... 40 V ID Drain Current............................................................................................................. 200 mA Characteristics (Ta=25C) Symbol VDSS IDSS IGSS VGS(th) ID(on) RDS(on) VDSS(on)1 VDSS(on)2 H2N7000 Min. 60 0.8 75 - Max. 1 10 3 5 2.5 0.4 Unit V uA nA V mA V v Test Conditions ID=10uA, VGS=0 VDS=48V VGS=15V VDS=3V, ID=1mA VGS=4.5V, VDS=10V VGS=10V, ID=0.5A VGS=10V, ID=0.5A VGS=4.5V, ID=75mA HSMC Product Specification HI-SINCERITY Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic Drain Current Variation with Gate Voltage & Temperature 2.0 2.5 1.8 VDS=10V 1.6 Tj=-55C ID Drain-Source Current (A) ID Drain-Source Current (A) VGS=10V 1.4 1.2 8V 1.0 7V 0.8 0.6 6V 0.4 5V 2.0 1.5 Tj=25C 1.0 Tj=150C 0.5 0.2 4V 0.0 0.0 0 2 4 6 8 10 0 2 4 VDS, Drain-Source Voltage (V) Transconductance Variation with Drain Current & Temperature Tj=-55C 10 VGS=10V f=1MHz 60 0.35 50 0.30 Capacitance (pF) gFS, Transconductance(S) 8 Capacitance Characteristics 70 0.40 Tj=25C 0.25 0.20 Tj=150C 0.15 40 Ciss 30 20 0.10 Coss 10 0.05 Crss 0 0.00 0.0 0.2 0.4 0.6 0.8 0 1.0 10 20 30 40 50 VDS, Drain-Source Voltage (V) ID, Drain-Source Current (A) On Resistance Variation with Temperature Body Diode Forward Voltage Variation with Current & Temperature 2.5 ID=0.5A VGS=10V 0.8 0.7 2.0 IS, Source-Drain Current(A) RDS(on), Normalized On-Resistance 6 VGS, Gate-Source Voltage (V) 1.5 1.0 0.5 0.6 Tj=150C 0.5 0.4 Tj=25C 0.3 0.2 Tj=-55C 0.1 0.0 -50 0.0 0 50 100 Tj, Junction Temperature (C) H2N7000 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 3/4 PD-Ta 450 Power Dissipation-PD(mW) 400 350 300 250 200 150 100 50 0 0 50 100 150 200 o Ambient Temperature-Ta( C) H2N7000 HSMC Product Specification HI-SINCERITY Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 4/4 MICROELECTRONICS CORP. TO-92 Dimension 2 A Marking : HSMC Logo B 1 2 Product Series Part Number 3 Date Code Rank 3 C Laser Mark HSMC Logo Product Series D Part Number H I G Ink Mark 1 Style : Pin 1.Source 2.Gate 3.Drain E F 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 H2N7000 HSMC Product Specification