HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001. 04.18
Page No. : 1/4
H2N7000 HSMC Product Specifi cation
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Description
The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25°C)
BVDSS Drain to Source Voltage......................................................................................... 60 V
BVGSS Gate to Source Voltage ......................................................................................... 40 V
ID Drain Current............................................................................................................. 200 mA
Characteristics (Ta=25 °C)
Symbol Min. Max. Unit Test Conditions
VDSS 60 - V ID=10uA, VGS=0
IDSS - 1 uA VDS=48V
±IGSS -±10 nA VGS=±15V
VGS(th) 0.8 3 V VDS=3V, ID=1mA
ID(on) 75 - mA VGS=4.5V, VDS=10V
RDS(on) - 5 VGS=10V, ID=0.5A
VDSS(on)1 - 2.5 V VGS=10V, ID=0.5A
VDSS(on)2 - 0.4 v VGS=4.5V, ID=75mA
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001. 04.18
Page No. : 2/4
H2N7000 HSMC Product Specifi cation
Characteristics Curve
On-Region Cha racteristic
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0246810
VDS, Drain- Sourc e Vol tage (V)
I D Drain-Source Current (A)
VGS=10V
8V
5V
6
V
7V
4V
Drain Current Variation w ith Gate Voltage
& Temperature
0.0
0.5
1.0
1.5
2.0
2.5
0246810
VGS, Gate- Source Voltage ( V)
I D Drain-Source Current (A)
Tj=150ºC
Tj=25ºC
Tj=-55ºC
VDS=10V
Transcon ductance Variation w ith Drain Curren t
& Temperature
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.0 0.2 0.4 0.6 0.8 1.0
ID, Drain-Sou rce Current (A)
gFS, Trans co ndu ct ance( S)
Tj=25ºC
Tj=150ºC
Tj=-55ºC
Capacitance Characteristics
0
10
20
30
40
50
60
70
01020304050
VDS, Drain- Sourc e Vol tage (V)
Cap a c ita nce (pF)
Ciss
Crss
Coss
VGS=10V
f=1MHz
On Resistance Variation with Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj, Jun ction T emperatu re (ºC)
R DS(on), Norm al ized On-R es ist ance
ID=0.5A
VGS=10V
Body Diode Forward Voltage Variation
with C urrent & Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Sour c e- Dr ain Voltage ( V)
IS, Source-Drain Curren t(A)
Tj=25ºC
Tj=-55ºC
Tj=150ºC
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001. 04.18
Page No. : 3/4
H2N7000 HSMC Product Specifi cation
PD-Ta
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200
Ambient Temper at ure- Ta(oC)
Power Dissipation -PD(mW)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001. 04.18
Page No. : 4/4
H2N7000 HSMC Product Specifi cation
TO-92 Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E - *0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controll i ng dimens ion : millim eters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin famil y, flamm abili ty solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its produc ts without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerit y Mic roel ectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style : Pin 1.Source 2.G ate 3.Dra in
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark