SILICON EPITAXIAL PLANAR TYPE ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. 1SV228 Unit in mm Low rg rg=0.30(Typ.) Small Package | 2 ne | + 3 te 1 al q | ote 7 | S MAXIMUM RATINGS (Ta=25C) ' CHARACTERISTIC SYMBOL RATING UNLT , Reverse Voltage VR 15 V 1q 3 1. ANODE 1 Junction Temperature Tj 125 C we] . 2, ANODE 2 , ; 3 20 3. CATHODE Storage Temperature Tstg -55+125 Cc JEDEC _ ELAS SC-59 TOSHIBA 1-3G1F Weight 0.13 ELECTRICAL CHARACTERISTICS (tTa=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT Reverse Voltage VR Tp=10uA 15 - - Vv Reverse Current IR Vpel5v - 10 nA Capacitance C3V VR=3V, f=LMHz (Note) |28.5 | 30.5 132.5 pF Capacitance Cay Vp=8V, =1LMHz (Note) |11.7 [12.7 ]13.7 pF Capacitance Ratio C3y/CEy - (Note) 2.1 - 2.6 - Series Resistance Ts Vp=3V, f=l0OMHz (Note) 0.3 0.5 a (Note) Characteristics between Anode 1 and Anode 2? Marking V4 6 Y 1239 1$V228 Table 1 : ADDRESS CLASSIFICATION OF CAPACITANCE TEST CONDITION : f=1MHz, Ta=25C No. C2V C3V cay cay i 34.70 ~ 35.74 28.60 ~ 29.45 16.80 ~ 17.30 11.72 ~ 12.07 2 35.56 ~ 36.62 29.31 ~ 30.18 17.21 ~ 17.72 12.01 ~ 12.37 3 36.44 ~ 37.53 30.03 ~ 30.93 17.63 ~ 18.15 12.31 ~ 12.67 4 37.35 ~ 38.47 30.77 ~ 31.69 18.06 ~ 18.60 12.61 ~ 12.98 5 38.27 ~ 39.41 31.53 ~ 32.47 18.50 ~ 19.05 12.92 ~ 13.30 6 18.95 ~ 19.51 13.23 ~ 13.62 (1) Units are compounded in one package and are matched to 34. (2) (3) C(Max.) ~- C(Min.) C(Min.) 50.03 (Vp=2~8v) and capacitance is classified as Table l. C2v, C3v, Cov, Cgy are Al-A2 capacitance. The tolerance of address is +1 address. 1240 CAPACITANCE Cy (pF) Ig (pA) REVERSE CURRENT 0 2 4 6 8 REVERSE VOLTAGE Vp (V) IR YR C 20 427 0 4 8 12 16 REVERSE VOLTAGE VR (V) 10 1241 FIGURE OF MERIT Q CAPACITANCE CHANGE RATIO OC (4) 1$V228 Q- VR 1000 f=100MHz Ta=25C 500 300 100 50 Q 2 4 6 8 10 REVERSE VOLTAGE Vp (V) 6C Ta -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta (C) C (Ta) -~C (25) NOTE : 80(4)= --___ * 190 c (25)