1N5711 and 1N6263 Vishay Semiconductors formerly General Semiconductor Schottky Diodes DO-204AH (DO-35 Glass) Features * For general purpose applications * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13" reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit VRRM 70 60 V Power Dissipation (Infinite Heatsink) Ptot 400(1) mW Maximum Single Cycle Surge 10 s Square Wave IFSM 2.0 A 1N5711 1N6263 Peak Inverse Voltage RJA Thermal Resistance Junction to Ambient Air Junction Temperature Tj Storage Temperature Range TS Electrical Characteristics 0.3 (1) C/mW C (1) 125 C (1) -55 to +150 (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V(BR)R IR = 10A 70 60 -- -- -- -- V Leakage Current IR VR = 50V -- -- 200 nA Forward Voltage Drop VF IF = 1mA IF = 15mA -- -- -- -- 0.41 1.0 V Ctot VR = 0V, f = 1MHz -- -- 2.0 2.2 pF trr IF = IR = 5mA, recover to 0.1IR -- -- 1 ns Reverse Breakdown Voltage Junction Capacitance Reverse Recovery Time 1N5711 1N6263 1N5711 1N6263 Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Document Number 88111 8-May-02 www.vishay.com 1 1N5711 and 1N6263 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) www.vishay.com 2 Document Number 88111 8-May-02