2N6437-D - ON Semiconductor - Datasheet.Directory

High-Power PNP Silicon

Transistors

. . . designed for use in industrial–military power amplifier and

switching circuit applications.

•High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 100 Vdc (Min) — 2N6437

= 120 Vdc (Min) — 2N6438

•High DC Current Gain —

hFE = 20–80 @IC = 10 Adc

= 12 (Min) @ IC = 25 Adc

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

•Fast Switching Times @ IC = 10 Adc

tr = 0.3 µs (Max)

ts = 1.0 µs (Max)

tf = 0.25 µs (Max)

•Complement to NPN 2N6339 thru 2N6341

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

2N6437

ÎÎÎÎ

2N6438

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

120

ÎÎÎÎ

140

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

6.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

IC

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

25

50

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

IB

ÎÎÎÎÎÎÎ

10

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎ

200

1.14

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TJ,Tstg

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

Î

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.875

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 2 1Publication Order Number:

2N6437/D

2N6437

2N6438

*ON Semiconductor Preferred Device

25 AMPERE

POWER TRANSISTORS

PNP SILICON

100, 120 VOLTS

200 WATTS

*

CASE 1–07

TO–204AA

(TO–3)

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200

50

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

150

125

100

175

75

25

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 50 mAdc, IB = 0) 2N6437

2N6438

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

100

120

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0) 2N6437

(VCE = 60 Vdc, IB = 0) 2N6438

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

50

ÎÎÎ

Î

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 110 Vdc, VBE(off) = –1.5 Vdc) 2N6437

(VCE = 130 Vdc, VBE(off) = –1.5 Vdc) 2N6438

(VCE = 100 Vdc, VBE(off) = –1.5 Vdc, TC = 150C) 2N6437

(VCE = 120 Vdc, VBE(off) = –1.5 Vdc, TC = 150C) 2N6438

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

10

1.0

ÎÎÎ

Î

ÎÎÎ

µAdc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0) 2N6437

(VCB = 140 Vdc, IE = 0) 2N6438

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

10

ÎÎÎ

Î

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 0.5 Adc, VCE = 2.0 Vdc)

(IC = 10 Adc, VCE = 2.0 Vdc)

(IC = 25 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

30

20

12

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

120

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

1.8

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.8

2.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎÎ

fT

ÎÎÎ

40

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

—

ÎÎÎÎ

700

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc)

ÎÎÎÎÎ

tr

ÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎÎ

ts

ÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎÎ

tf

ÎÎÎ

—

ÎÎÎÎ

0.25

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width  300 µs; Duty Cycle  2.0%.

Figure 2. Switching Time Test Circuit

0.5

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.7

0.2

0.1

0.07

0.7 2.0 3.0 7.0

td @ VBE(off) = 6.0 V

+ 9.0 V

0

VCC

SCOPE

RB =

10 OHMS

- 5.0 V

tr, tf  10 ns

DUTY CYCLE = 1.0%

RC

8.0 OHMS

0.03

0.05

5.0 20

10

µs

- 11 V

1.0

0.3

0.5

1.0 10

NOTE: For information on Figures 3 and 6 , RB and RC were

varied to obtain desired test conditions.

+ 80 V

MBR74

5

30

VCC = 80 V

IC/IB = 10

TJ = 25°C

tr

t, TIME (s)µ

0.3

0.2

0.3

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Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

D = 0.5

SINGLE

PULSE

0.2

0.05

0.1

0.02

0.01

0.3 3.0 30 300

ZθJC(t) = r(t)RθJC

RθJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

100

2.0

Figure 5. Active Region Safe Operating Area

50

5.0

0.01 10 20 70 200

TJ = 200°C

0.1

10

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

20

0.2

50 100

200 µs

dc

2.0

0.02

0.05

1.0

3.0 5.0 307.0

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25°C(SINGLE PULSE)

PULSE DUTY CYCLE  10%

SECOND BREAKDOWN LIM

ITED

CURVES APPLY

BELOW RATED VCEO

5.0 ms

1.0 ms

2N6437

2N6438

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

 200C. TJ(pk) may be calculated from the data in

Figure 4. A t high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

3.0

0.3

Figure 6. Turn-Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

0.7

0.5

0.2

0.1

0.03 0.7 1.0 2.0 5.0 10 30

VCC = 80 V

IB1 = IB2

IC/IB = 10

TJ = 25°C

ts

3.0

0.3

1.0

0.07

0.05

7.0 20

tf

2.0

0.5 0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

0.5 1.0 2.0 5.0 20 50 10010

CAPACITANCE (pF)

1000

700

300

200

TJ = 25°C

Cib

Cob

4000

2000

500

0.2

3000

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5

, BASE CURRENT (A)µIBVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (A)µIC

200

0.3

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

10 0.7 1.0 2.0 3.0 5.0 10 20

50

30

20

1.0

0.3

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

2.0

1.2

0.8

0.4

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

2.0

Figure 10. “On” Voltages

IB, BASE CURRENT (AMP)

0

0.02 0.05 0.1 0.2 0.3 1.0 2.0

1.6

0.8

VBE, BASEEMITTER VOLTAGE (VOLTS)

100

70

hFE, DC CURRENT GAIN

TJ = 150°C

+ 25°C

-55°C

-0.2-0.10+0.1+0.2 -0.3 -0.4 -0.5

VCE = 40 V

TJ = +150°C

+100°C

REVERSE FORWARD

7.0 30

TJ = 25°C

IC = 2.0 A 5.0 A 10 A 20 A

V, VOLTAGE (VOLTS)

+2.5

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)°

θ

+2.0

+1.0

-0.5

-2.5

θVB FOR VBE

*θVC FOR VCE(sat)

*APPLIES FOR IC/IB 

hFE@VCE  2.0V

2

Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region

VBE @ VCE = 2.0 V

1.8

1.4

0.7 1.0 2.0 3.0 5.0 10 207.0 30

VBE, BASEEMITTER VOLTAGE (VOLTS)

0+0.08+0.16 -0.08 -0.16 -0.24

VCE = 40 V

REVERSE FORWARD

VCE = 2.0 V

VCE = 4.0 V

0.5 0.070.03 0.70.5

1.8

1.4

1.0

0.6

0.4

0.2

0.5

-55°C to +25°C

+25°C to +150°C

-55°C to + 25°C

0.3 0.7 1.0 2.0 3.0 5.0 10 207.0 300.5

+1.5

+0.5

-1.0

-1.5

-2.0

+25°C

102

101

100

10-1

10-2

10-3

101

100

10-1

10-2

10-3

10-4

+100°C

+25°C

TJ = +150°C

1.2

0.6

0.2

1.6

0

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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Notes

2N6437 2N6438

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