VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Sep-11 1Document Number: 93319
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Schottky Rectifier, 3.3 A
FEATURES
Low profile, axial leaded outline
High frequency operation
Very low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and
long term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for commercial level
Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
PRODUCT SUMMARY
Package DO-201AD (C-16)
IF(AV) 3.3 A
VR30 V, 40 V
VF at IFSee Electrical table
IRM max. 20 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 6.0 mJ
Cathode Anode
C-16
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.3 A
VRRM 30/40 V
IFSM tp = 5 μs sine 450 A
VF3 Apk, TJ = 25 °C 0.57 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-31DQ03 VS-31DQ03-M3 VS-31DQ04 VS-31DQ04-M3 UNITS
Maximum DC reverse voltage VR30 30 40 40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4 IF(AV) 50 % duty cycle at TL = 117 °C, rectangular waveform 3.3
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
450
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Sep-11 2Document Number: 93319
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
3 A TJ = 25 °C 0.57
V
6 A 0.71
3 A TJ = 125 °C 0.51
6 A 0.62
Maximum reverse leakage current
See fig. 4 IRM (1) TJ = 25 °C VR = Rated VR
1mA
TJ = 125 °C 20
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of charge dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 40 to 150 °C
Maximum thermal resistance,
junction to ambient RthJA
DC operation
Without cooling fin 80
°C/W
Typical thermal resistance,
junction to lead RthJL
With fin 20 mm x 20 mm (0.79" x 0.79")
1.0 mm (0.04") thickness 15
Approximate weight 1.2 g
0.042 oz.
Marking device Case style C-16 31DQ03
31DQ04
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Sep-11 3Document Number: 93319
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
IF - Instantaneous Forward Current (A)
93319_01 VFM - Forward Voltage Drop (V)
0.1
1
10
100
0 0.3 0.6 0.9 1.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
93319_02
0.001
0.01
0.1
1
10
100
0 10 20 30 40
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
93319_03
10
100
1000
0 40 80 120 160 200
TJ = 25 °C
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
93319_04
0 1 2 3 4 5
70
90
110
130
150
DC
see note (1)
Square wave (D = 0.50)
80 % Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93319_05
0
0.5
1
1.5
2
2.5
0 1 2 3 4 5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
93319_06
10
100
1000
10 100 1000 10 000
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Sep-11 4Document Number: 93319
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-31DQ03 500 500 Bulk
VS-31DQ03TR 1200 1200 Tape and reel
VS-31DQ03-M3 500 500 Bulk
VS-31DQ03TR-M3 1200 1200 Tape and reel
VS-31DQ04 500 500 Bulk
VS-31DQ04TR 1200 1200 Tape and reel
VS-31DQ04-M3 500 500 Bulk
VS-31DQ04TR-M3 1200 1200 Tape and reel
1
- 31 = Current Rating 3.3 A
2
- D = DO-201 package
3
- Q = Schottky Q.. series
4
- 04 = Voltage ratings
5
- TR = Tape and reel package
None = Bulk package
03 = 30 V
04 = 40 V
Device code
62 43 5
31 D Q 04 TRVS-
1
-M3
7
- Vishay Semiconductors product
6
7
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
- Environmental digit
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95242
Part marking information www.vishay.com/doc?95304
Packaging information www.vishay.com/doc?95338
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 1Document Number: 95242
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Axial DO-201AD (C-16)
DIMENSIONS in millimeters (inches)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
Ø 5.8 (0.23)
MAX.
10.0 (0.39)
MAX.
Ø 5.8 (0.23)
MAX.
21.0 (0.83) MIN.
(2 places)
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Cathode band
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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