31DQ04TR - Vishay [Semiconductors]

VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

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Revision: 20-Sep-11 1Document Number: 93319

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Schottky Rectifier, 3.3 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and

long term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

DESCRIPTION

The VS-31DQ... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection

PRODUCT SUMMARY

Package DO-201AD (C-16)

IF(AV) 3.3 A

VR30 V, 40 V

VF at IFSee Electrical table

IRM max. 20 mA at 125 °C

TJ max. 150 °C

Diode variation Single die

EAS 6.0 mJ

Cathode Anode

C-16

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 3.3 A

VRRM 30/40 V

IFSM tp = 5 μs sine 450 A

VF3 Apk, TJ = 25 °C 0.57 V

TJ- 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-31DQ03 VS-31DQ03-M3 VS-31DQ04 VS-31DQ04-M3 UNITS

Maximum DC reverse voltage VR30 30 40 40 V

Maximum working peak reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

See fig. 4 IF(AV) 50 % duty cycle at TL = 117 °C, rectangular waveform 3.3

Maximum peak one cycle

non-repetitive surge current

See fig. 6

IFSM

5 µs sine or 3 µs rect. pulse Following any rated load

condition and with rated

VRRM applied

450

10 ms sine or 6 ms rect. pulse 90

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6.0 mJ

Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A

VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

www.vishay.com Vishay Semiconductors

Revision: 20-Sep-11 2Document Number: 93319

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

Note

(1) thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop

See fig. 1 VFM (1)

3 A TJ = 25 °C 0.57

6 A 0.71

3 A TJ = 125 °C 0.51

6 A 0.62

Maximum reverse leakage current

See fig. 4 IRM (1) TJ = 25 °C VR = Rated VR

1mA

TJ = 125 °C 20

Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF

Typical series inductance LSMeasured lead to lead 5 mm from package body 9.0 nH

Maximum voltage rate of charge dV/dt Rated VR10 000 V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage

temperature range TJ (1), TStg - 40 to 150 °C

Maximum thermal resistance,

junction to ambient RthJA

DC operation

Without cooling fin 80

°C/W

Typical thermal resistance,

junction to lead RthJL

With fin 20 mm x 20 mm (0.79" x 0.79")

1.0 mm (0.04") thickness 15

Approximate weight 1.2 g

0.042 oz.

Marking device Case style C-16 31DQ03

31DQ04

dPtot

dTJ

------------- 1

RthJA

--------------<

VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

www.vishay.com Vishay Semiconductors

Revision: 20-Sep-11 3Document Number: 93319

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

Fig. 5 - Forward Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Note

(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

IF - Instantaneous Forward Current (A)

93319_01 VFM - Forward Voltage Drop (V)

0.1

100

0 0.3 0.6 0.9 1.2

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

IR - Reverse Current (mA)

VR - Reverse Voltage (V)

93319_02

0.001

0.01

0.1

100

0 10 20 30 40

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

- Junction Capacitance (pF)

- Reverse Voltage (V)

93319_03

100

1000

0 40 80 120 160 200

TJ = 25 °C

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

93319_04

0 1 2 3 4 5

110

130

150

see note (1)

Square wave (D = 0.50)

80 % Rated V

applied

Average Forward Current - I

F(AV)

(A)

Average Power Loss (W)

93319_05

0.5

1.5

2.5

0 1 2 3 4 5

RMS Limit

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

tp - Square Wave Pulse Duration (µs)

IFSM - Non-Repetitive Surge Current (A)

93319_06

100

1000

10 100 1000 10 000

At Any Rated Load Condition

And With rated VRRM Applied

Following Surge

VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

www.vishay.com Vishay Semiconductors

Revision: 20-Sep-11 4Document Number: 93319

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-31DQ03 500 500 Bulk

VS-31DQ03TR 1200 1200 Tape and reel

VS-31DQ03-M3 500 500 Bulk

VS-31DQ03TR-M3 1200 1200 Tape and reel

VS-31DQ04 500 500 Bulk

VS-31DQ04TR 1200 1200 Tape and reel

VS-31DQ04-M3 500 500 Bulk

VS-31DQ04TR-M3 1200 1200 Tape and reel

- 31 = Current Rating 3.3 A

- D = DO-201 package

- Q = Schottky Q.. series

- 04 = Voltage ratings

- TR = Tape and reel package

None = Bulk package

03 = 30 V

04 = 40 V

Device code

62 43 5

31 D Q 04 TRVS-

-M3

- Vishay Semiconductors product

None = Lead (Pb)-free and RoHS compliant

-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free

- Environmental digit

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95242

Part marking information www.vishay.com/doc?95304

Packaging information www.vishay.com/doc?95338

Outline Dimensions

www.vishay.com Vishay Semiconductors

Revision: 29-Aug-11 1Document Number: 95242

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Axial DO-201AD (C-16)

DIMENSIONS in millimeters (inches)

21.0 (0.83) MIN.

(2 places)

10.0 (0.39)

MAX.

Ø 5.8 (0.23)

MAX.

10.0 (0.39)

MAX.

Ø 5.8 (0.23)

MAX.

21.0 (0.83) MIN.

(2 places)

2.54 (0.100) MAX.

Flash (2 places)

Ø 1.40 (0.055)

Ø 1.20 (0.047)

(2 places)

Ø 1.40 (0.055)

Ø 1.20 (0.047)

(2 places)

Cathode band

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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