QRE1113, QRE1113GR, QRE1114GR Miniature Reflective Object Sensor Features * * * * * * www.onsemi.com Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing Two Leadform Options: Through Hole (QRE1113) SMT Gull Wing (QRE1113GR & QRE1114GR) Two Packaging Options: Tube (QRE1113) Tape and Reel (QRE1113GR & QRE1114GR) Pin 1: Anode Pin 2: Cathode Pin 3: Collector Pin 4: Emitter 1 2 3 4 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit TOPR Operating Temperature Parameter -40 to +85 C TSTG Storage Temperature -40 to +90 C TSOL-I Soldering Temperature (Iron) (Notes 2, 3, 4) 240 for 5 s C TSOL-F Soldering Temperature (Flow) (Notes 3, 4) 260 for 10 s C REFLECTIVE RECTANGULAR SURFACE MOUNT CASE 100CY EMITTER IF Continuous Forward Current 50 mA VR Reverse Voltage 5 V IFP Peak Forward Current (Note 5) 1 A PD Power Dissipation (Note 1) 75 mW VCEO Collector-Emitter Voltage 30 V VECO SENSOR Emitter-Collector Voltage 5 V IC Collector Current 20 mA PD Power Dissipation (Note 1) 50 mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Derate power dissipation linearly 1.00 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16 (1.6 mm) from housing. 5. Pulse conditions: tp = 100 ms; T = 10 ms. This document, and the information contained herein, is CONFIDENTIAL AND PROPRIETARY and the property of Semiconductor Components Industries, LLC., dba ON Semiconductor. It shall not be used, published, disclosed or disseminated outside of the Company, in whole or in part, without the written permission of ON Semiconductor. Reverse engineering of any or all of the information contained herein is strictly prohibited. E 2020, SCILLC. All Rights Reserved. (c) Semiconductor Components Industries, LLC, 2002 February, 2020 - Rev. 7 1 REFLECTIVE RECTANGULAR THROUGH HOLE CASE 100AQ ORDERING INFORMATION Package Shipping QRE1113 Reflective Rectangular (Through Hole) 1600 / Tube QRE1113GR & QRE1114GR Reflective Rectangular (Surface Mount) 1000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: QRE1113/D QRE1113, QRE1113GR, QRE1114GR ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit 1.2 1.6 V 10 mA INPUT DIODE VF Forward Voltage IF = 20 mA lR Reverse Leakage Current VR = 5 V Peak Emission Wavelength IF = 20 mA lPE 940 nm OUTPUT TRANSISTOR lD Collector-Emitter Dark Current IF = 0 mA, VCE = 20 V On-State Collector Current IF = 20 mA, VCE = 5 V (Note 6) Cross-Talk Collector Current 100 nA COUPLED lC(ON) QRE1113 & QRE1113GR 0.10 QRE1114GR 0.30 0.90 mA 0.60 mA IF = 20 mA, VCE = 5 V (Note 7) 1 mA Saturation Voltage IF = 20 mA, IC = 50 mA (Note 6) 0.3 V tr Rise Time VCC = 5 V, lC(ON) = 100 mA, RL = 1 kW tf Fall Time ICX VCE(SAT) 20 ms 20 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Measured using an aluminum alloy mirror at d = 1 mm. 7. No reflective surface at close proximity. REFLOW PROFILE 260C max. for 10 sec. max. 1C to 5C/sec Temperature (5C) 260C 1C to 5C/sec 220C Pre-heating 180C to 200C 60 sec. max. above 220C 120 sec. max. Time (seconds) Figure 1. Reflow Profile www.onsemi.com 2 QRE1113, QRE1113GR, QRE1114GR 1.0 1.0 IF = 10 mA VCE = 5 V TA = 25C 0.8 IC(ON) - COLLECTOR CURRENT (mA) IC(ON) - NORMALIZED COLLECTOR CURRENT TYPICAL PERFORMANCE CURVES d 0 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 0.0 Mirror 0 1 2 3 4 QRE1113 & QRE1113GR 0.8 0.6 0.4 QRE1114GR 0.2 0.0 5 0 4 8 d-DISTANCE (mm) 2.0 20 102 d = 1 mm, 90% reflection TA = 25C 1.6 1.4 IF = 25mA 1.2 IF =20mA 1.0 0.8 IF =15mA 0.6 IF =10mA 0.4 IF =5mA 0.2 0.0 0.1 16 Figure 3. Collector Current vs. Forward Current ICEO - NORMALIZED DARK CURRENT IC(ON) - NORMALIZED COLLECTOR CURRENT Figure 2. Normalized Collector Current vs. Distance between Device and Reflector 1.8 12 IF - FORWARD CURRENT (mA) 1 Normalized to: VCE = 10 V TA = 25C VCE - COLLECTOR EMITTER VOLTAGE (V) VCE = 5 V 101 100 10-1 10-2 25 10 VCE = 10 V 40 55 70 TA - AMBIENT TEMPERATURE (C) Figure 4. Normalized Collector Current vs. Collector to Emitter Voltage Figure 5. Collector Emitter Dark Current (Normalized) vs. Ambient Temperature www.onsemi.com 3 85 QRE1113, QRE1113GR, QRE1114GR TYPICAL PERFORMANCE CURVES (Continued) 100 50 VCC = 10 V tpw = 100 us T=1ms TA = 25C RISE AND FALL TIME (ms) IF - FORWARD CURRENT (mA) TA = 25C 40 30 20 10 0 1.0 1.1 1.2 1.3 1.4 tf IC = 0.3 mA tr 10 tf tr IC = 1 mA 1 0.1 1.5 1 10 RL - LOAD RESISTANCE (kW) VF - FORWARD VOLTAGE (V) Figure 6. Forward Current vs. Forward Voltage Figure 7. Rise and Fall Time vs. Load Resistance RELATIVE RADIANT INTENSITY VF - FORWARD VOLTAGE (V) 3.0 2.5 2.0 IF = 50 mA 1.5 IF = 20 mA IF = 10 mA 1.0 0.5 0.0 -40 -20 0 20 40 60 1.0 0.9 0.8 0.7 0.6 80 0.4 0.2 0 0.2 0.4 ANGULAR DISPLACEMENT TA - AMBIENT TEMPERATURE (C) Figure 8. Forward Voltage vs. Ambient Temperature Figure 9. Radiation Diagram www.onsemi.com 4 0.6 QRE1113, QRE1113GR, QRE1114GR TAPING DIMENSIONS FOR GR OPTION Progressive Direction 2.00.05 4.0 o1.5 0.25 1.75 5.50.05 12.00.3 4.75 3.73 8.0 1.98 General tolerance 0.1 Dimensions in mm Figure 10. Taping Dimensions for GR Option REEL DIMENSIONS 2.2 0.5 o178.0 1.0 o60.0 0.5 o13.0 0.5 12.0 0.15 9.0 0.5 Figure 11. Reel Dimensions www.onsemi.com 5 QRE1113, QRE1113GR, QRE1114GR Precautionary Notes 1. Refer to application note AND8003/D, "Storage and Handling of Dry Packed Surface Mounted Devices" for details of handling procedure. 2. Product soldering terminals are silver plated and oxidization may occur with prolonged exposure to ambient environment. Oxidized terminal may have poor solderability performance. Keep unsealed devices in moisture barrier bag sealed with desiccant or in dry cabinet at <5% relative humidity. 3. Store PCB in sealed moisture barrier bag together with desiccant or store in dry cabinet at <5% relative humidity. Mounted device that has been exposed to ambient environment for long period of time may suffer moisture related damage if PCB is subjected to subsequent high temperature processes. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS REFLECTIVE RECTANGULAR THROUGH HOLE CASE 100AQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13409G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. REFLECTIVE RECTANGULAR THROUGH HOLE PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ARUSM-313 / REFLECTIVE RECTANGULAR SURFACE MOUNT CASE 100CY ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13407G DATE 31 JAN 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. ARUSM-313 / REFLECTIVE RECTANGULAR SURFACE MOUNT PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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