QRE1113GR - ON SEMICONDUCTOR - Datasheet.Directory

February, 2020 − Rev. 7

1Publication Order Number:

QRE1113/D

QRE1113, QRE1113GR,

QRE1114GR

Miniature Reflective

Object Sensor

Features

•Phototransistor Output

•No Contact Surface Sensing

•Miniature Package

•Lead Form Style: Gull Wing

•Two Leadform Options:

♦Through Hole (QRE1113)

♦SMT Gull Wing (QRE1113GR & QRE1114GR)

•Two Packaging Options:

♦Tube (QRE1113)

♦Tape and Reel (QRE1113GR & QRE1114GR)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Parameter Value Unit

TOPR Operating Temperature −40 to +85 °C

TSTG Storage Temperature −40 to +90 °C

TSOL−ISoldering Temperature (Iron)

(Notes 2, 3, 4)

240 for 5 s °C

TSOL−FSoldering Temperature (Flow)

(Notes 3, 4)

260 for 10 s °C

EMITTER

IFContinuous Forward Current 50 mA

VRReverse Voltage 5 V

IFP Peak Forward Current (Note 5) 1 A

PDPower Dissipation (Note 1) 75 mW

SENSOR

VCEO Collector-Emitter Voltage 30 V

VECO Emitter-Collector Voltage 5 V

ICCollector Current 20 mA

PDPower Dissipation (Note 1) 50 mW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Derate power dissipation linearly 1.00 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16″ (1.6 mm) from housing.

5. Pulse conditions: tp = 100 ms; T = 10 ms.

This document, and the information contained herein, is CONFIDENTIAL AND

PROPRIETARY and the property of Semiconductor Components Industries,

LLC., dba ON Semiconductor. It shall not be used, published, disclosed or

disseminated outside of the Company, in whole or in part, without the written

permission of ON Semiconductor. Reverse engineering of any or all of the

information contained herein is strictly prohibited.

www.onsemi.com

REFLECTIVE RECTANGULAR SURFACE MOUNT

CASE 100CY

REFLECTIVE RECTANGULAR THROUGH HOLE

CASE 100AQ

12 34

Pin 1: Anode

Pin 2: Cathode

Pin 3: Collector

Pin 4: Emitter

Device Package Shipping†

ORDERING INFORMATION

QRE1113 Reflective

Rectangular

(Through Hole)

1600 / Tube

QRE1113GR

QRE1114GR

Reflective

Rectangular

(Surface Mount)

1000 /

Tape & Reel

†For information on tape and reel specifications, in-

cluding part orientation and tape sizes, please refer

to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

QRE1113, QRE1113GR, QRE1114GR

www.onsemi.com

ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit

INPUT DIODE

VFForward Voltage IF = 20 mA 1.2 1.6 V

lRReverse Leakage Current VR = 5 V 10 mA

lPE Peak Emission

Wavelength

IF = 20 mA 940 nm

OUTPUT TRANSISTOR

lDCollector-Emitter Dark

Current

IF = 0 mA, VCE = 20 V 100 nA

COUPLED

lC(ON) On-State Collector

Current

IF = 20 mA, VCE = 5 V

(Note 6)

QRE1113 & QRE1113GR 0.10 0.90 mA

QRE1114GR 0.30 0.60 mA

ICX Cross-Talk Collector

Current

IF = 20 mA, VCE = 5 V (Note 7) 1mA

VCE(SAT) Saturation Voltage IF = 20 mA, IC = 50 mA (Note 6) 0.3 V

trRise Time VCC = 5 V, lC(ON) = 100 mA, RL = 1 kW20 ms

tfFall Time 20 ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Measured using an aluminum alloy mirror at d = 1 mm.

7. No reflective surface at close proximity.

REFLOW PROFILE

Figure 1. Reflow Profile

Time (seconds)

1°C to 5°C/sec

260°C max. for 10 sec. max.

260°C

120 sec. max.

60 sec. max.

above 220°C

Pre−heating

180°C to 200°C

220°C

Temperature (5C)

QRE1113, QRE1113GR, QRE1114GR

www.onsemi.com

TYPICAL PERFORMANCE CURVES

Figure 2. Normalized Collector Current vs.

Distance between Device and Reflector

Figure 3. Collector Current vs. Forward Current

Figure 4. Normalized Collector Current vs.

Collector to Emitter Voltage

Figure 5. Collector Emitter Dark Current

(Normalized) vs. Ambient Temperature

d−DISTANCE (mm)

0.0

0.2

0.4

0.6

0.8

1.0

IF = 10 mA

VCE = 5 V

TA = 25˚C

Mirror

Sensing Object:

White Paper (90% reflective)

123 45

IF − FORWARD CURRENT (mA)

VCE − COLLECTOR EMITTER VOLTAGE (V)

0.1 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IF = 25mA

IF=20mA

IF=10mA

IF=15mA

IF=5mA

d = 1 mm, 90% reflection

TA = 25˚C

TA − AMBIENT TEMPERATURE (˚C)

25 40 55 70 85

10−2

10−1

100

101

102

Normalized to:

VCE = 10 V

TA = 25˚C

VCE = 10 V

VCE = 5 V

IC(ON) − NORMALIZED COLLECTOR CURRENT

IC(ON) − COLLECTOR CURRENT (mA)

ICEO − NORMALIZED DARK CURRENT

IC(ON) − NORMALIZED COLLECTOR CURRENT

0481216 20

0.0

0.2

0.4

0.6

0.8

1.0

QRE1113 & QRE1113GR

QRE1114GR

QRE1113, QRE1113GR, QRE1114GR

www.onsemi.com

TYPICAL PERFORMANCE CURVES (Continued)

Figure 6. Forward Current vs. Forward Voltage Figure 7. Rise and Fall Time vs. Load Resistance

Figure 8. Forward Voltage vs. Ambient

Temperature

Figure 9. Radiation Diagram

VF − FORWARD VOLTAGE (V)

IF − FORWARD CURRENT (mA)

1.0 1.1 1.2 1.3 1.4 1.5

TA = 25˚C

RL− LOAD RESISTANCE (kW)

0.1 101

100 VCC = 10 V

tpw = 100 us

T=1ms

TA = 25˚C

IC = 0.3 mA

IC = 1 mA

RISE AND FALL TIME (ms)

VF − FORWARD VOLTAGE (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

IF = 50 mA

IF = 10 mA

IF = 20 mA

TA − AMBIENT TEMPERATURE (˚C)

−40 −20020406080

ANGULAR DISPLACEMENT

00.20.40.6 0.60.40.2

1.0

0.9

0.8

0.7

RELATIVE RADIANT INTENSITY

QRE1113, QRE1113GR, QRE1114GR

www.onsemi.com

TAPING DIMENSIONS FOR GR OPTION

Figure 10. Taping Dimensions for GR Option

2.0±0.05 4.0

0.25

5.5±0.05

12.0±0.3

8.0

3.73

4.75

1.98

ø1.5

1.75

Progressive Direction

General tolerance ±0.1

Dimensions in mm

REEL DIMENSIONS

Figure 11. Reel Dimensions

ø13.0 ± 0.5

2.2 ± 0.5

9.0 ± 0.5

12.0 ± 0.15

ø60.0 ± 0.5

ø178.0 ± 1.0

QRE1113, QRE1113GR, QRE1114GR

www.onsemi.com

Precautionary Notes

1. Refer to application note AND8003/D, “Storage and Handling of Dry Packed Surface Mounted Devices” for details of handling procedure.

2. Product soldering terminals are silver plated and oxidization may occur with prolonged exposure to ambient environment. Oxidized terminal

may have poor solderability performance. Keep unsealed devices in moisture barrier bag sealed with desiccant or in dry cabinet at <5%

relative humidity.

3. Store PCB in sealed moisture barrier bag together with desiccant or store in dry cabinet at <5% relative humidity. Mounted device that has

been exposed to ambient environment for long period of time may suffer moisture related damage if PCB is subjected to subsequent high

temperature processes.

REFLECTIVE RECTANGULAR THROUGH HOLE

CASE 100AQ

ISSUE O

DATE 30 SEP 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98AON13409G

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

REFLECTIVE RECTANGULAR THROUGH HOLE

ARUSM−313 / REFLECTIVE RECTANGULAR SURFACE MOUNT

CASE 100CY

ISSUE O

DATE 31 JAN 2017

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98AON13407G

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

ARUSM−313 / REFLECTIVE RECTANGULAR SURFACE MOUNT

www.onsemi.com

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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

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