Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2N3866 / 2N3866A
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter 30 Vdc
VCBO Collector-Base Voltage 55 Vdc
VEBO Emitter-Base Voltage 3.5 Vdc
IC Collector Current 400 mA
Thermal Data
PD Total Device Dissipation
Derate above 25ºC 5.0
28.6 Watts
mW/ ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
• 800 MHz Current-Gain Bandwidth Product
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2N3866 / 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCER Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
55
-
-
Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
30
-
-
Vdc
BVCBO Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
55
-
-
Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
3.5
-
-
Vdc
ICEO Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
-
-
20 µA
ICEX Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
-
-
100
µA
(on)
HFE DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
5.0
10
25
-
-
-
-
200
200
-
-
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
-
-
1.0
Vdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
fT Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 2N3866
2N3866A
500
800
800
-
-
-
MHz
COB Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
-
2.8
3.5
pF
Rev B January 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2N3866 / 2N3866A
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
GPE Power Gain Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C
10
-
-
dB
Pout Output Power Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C
1.0
-
-
Watts
ηC Collector Efficiency Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C
45
-
-
%
8-60
L1
3-35 RFC
12
5.6 OHMS
1000
0.9-7
POUT
(RL=50 OHMS)
VCE = -28V
RFC
RFC
8-60
LS
PIN
(RS=50 OHMS)
Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS.
L1: 2 TURNS No. 18 wire, ¼” ID, 1/8” long Ls: 2 ¾ TURNS No. 18 wire, ¼” ID, 3/16” long
Capacitor values in pF unless Tuning capacitors are air variable
otherwise indicated.
.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2N3866 / 2N3866A
Efficienc
y
(
%
)
GPE Fre
q
(
MHz
)
Fre
q
(
MHz
)
Gu Max (dB)
IC max (mA)
Packag
e
Device
IC max
RF
(
Low Power PA / General Pur
p
ose
)
Selection
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200
POWER MAC RO MRF557 N PN 870 1.5 8 55 12.5 16 400
POWER MAC RO MRF557T NPN 870 1.5 8 55 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 1 10 45 28 30 400
SO-8 MRF 3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MACRO MRF 5 55 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF55 5T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2
N
PN 175 0.15 18 60 12 20 400
TO-39 2N4427
N
PN 175 1 10 50 12 20 400
POWER MACRO MRF553
N
PN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T
N
PN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607
N
PN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255
N
PN 175 3 7.8 50 12.5 18 1000
TO-72 2N5179
N
PN 200 20 612 50
Pout
GPE
(
dB
)
GPE VCC
BVCEO
T
yp
e
Packa
g
Device
T
yp
e
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Ftau (MHz)
Ccb(pF)
BVCE
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R 1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BF R91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BF R96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BF R91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BF R90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 270 400
TO-39 MRF544
N
PN 13.5 1500 70 400
RF
(
LNA / General Pur
p
ose
)
Selection
Power
Macro T SO-8
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Low Cost RF Plastic Package Options
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2N3866 / 2N3866A