STGWT40HP65FB - STMICROELECTRONICS

July 2016

DocID028465 Rev 3

1/17

This is information on a product in full production.

www.st.com

STGWT40HP65FB

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features

 Maximum junction temperature: TJ = 175 °C

 Minimized tail current

 VCE(sat) = 1.6 V (typ.) @ IC = 40 A

 Tight parameter distribution

 Co-packed diode for protection

 Safe paralleling

 Low thermal resistance

Applications

 Power factor corrector (PFC)

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGWT40HP65FB

GWT40HP65FB

TO-3P

Tube

123

TAB

TO-3P

Contents

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Contents

1 Electrical ratings ............................................................................. 3

2 Electrical characteristics ................................................................ 4

2.1 Electrical characteristics (curves) ...................................................... 6

3 Test circuits ................................................................................... 12

4 Package information ..................................................................... 13

4.1 TO-3P package information ............................................................ 14

5 Revision history ............................................................................ 16

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Electrical ratings

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1 Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

V

IC

Continuous collector current at TC = 25 °C

80

A

Continuous collector current at TC = 100 °C

40

ICP(1)

Pulsed collector current

160

A

VGE

Gate-emitter voltage

± 30

V

IF(2)

Continuous forward current at TC = 25 °C

5

A

Continuous forward current at TC = 100 °C

5

IFP(3)

Pulsed forward current

10

A

PTOT

Total dissipation at TC = 25 °C

283

W

TSTG

Storage temperature range

- 55 to 150

°C

TJ

Operating junction temperature range

- 55 to 175

Notes:

(1)Pulse width limited by maximum junction temperature.

(2)Limited by wires.

(3)Pulsed forward current.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.53

°C/W

RthJC

Thermal resistance junction-case diode

5

RthJA

Thermal resistance junction-ambient

50

Electrical characteristics

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2 Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.6

2.0

V

VGE = 15 V, IC = 40 A,

TJ = 125 °C

1.7

VGE = 15 V, IC = 40 A,

TJ = 175 °C

1.8

VF

Forward on-voltage

IF = 5 A

2

V

IF = 5 A, TJ = 125 °C

1.85

IF = 5 A, TJ = 175 °C

1.75

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

25

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

nA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

-

5412

-

pF

Coes

Output capacitance

-

198

-

Cres

Reverse transfer capacitance

-

107

-

Qg

Total gate charge

VCC = 520 V, IC = 40 A,

VGE = 15 V (see Figure 29:

"Gate charge test circuit")

-

210

-

nC

Qge

Gate-emitter charge

-

39

-

Qgc

Gate-collector charge

-

82

-

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off-delay time

VCE = 400 V, IC = 40 A,

VGE = 15 V, RG = 5 Ω (see

Figure 28: "Test circuit for

inductive load switching")

-

142

-

ns

tf

Current fall time

-

27

-

ns

Eoff(1)

Turn-off switching energy

-

363

-

µJ

td(off)

Turn-off-delay time

VCE = 400 V, IC = 40 A,

VGE = 15 V, RG = 5 Ω

TJ = 175 °C (see Figure 28:

"Test circuit for inductive

load switching")

-

141

-

ns

tf

Current fall time

-

61

-

ns

Eoff

Turn-off switching energy

-

764

-

µJ

Notes:

(1)Including the tail of the collector current.

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Electrical characteristics

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Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 5 A, VR = 400 V,

VGE = 15 V (see Figure

28: "Test circuit for

inductive load switching")

di/dt = 1000 A/µs

-

140

ns

Qrr

Reverse recovery charge

-

21

nC

Irrm

Reverse recovery current

-

6.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

430

A/µs

Err

Reverse recovery energy

-

1.6

µJ

trr

Reverse recovery time

IF = 5 A, VR = 400 V,

VGE = 15 V TJ = 175 °C

(see Figure 28: "Test

circuit for inductive load

switching")

di/dt = 1000 A/µs

-

200

ns

Qrr

Reverse recovery charge

-

47.3

nC

Irrm

Reverse recovery current

-

9.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

428

A/µs

Err

Reverse recovery energy

-

3.2

µJ

Electrical characteristics

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2.1 Electrical characteristics (curves)

Figure 2: Power dissipation vs. case

temperature

Figure 3: Collector current vs. case

temperature

Figure 4: Output characteristics (TJ = 25°C)

Figure 5: Output characteristics (TJ = 175°C)

Figure 6: VCE(sat) vs. junction temperature

Figure 7: VCE(sat) vs. collector current

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Electrical characteristics

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Figure 8: Collector current vs. switching

frequency

Figure 9: Forward bias safe operating area

Figure 10: Transfer characteristics

Figure 11: Diode VF vs. forward current

Figure 12: Normalized VGE(th) vs junction

temperature

Figure 13: Normalized V(BR)CES vs. junction

temperature

Electrical characteristics

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Figure 14: Capacitance variations

Figure 15: Gate charge vs. gate-emitter

voltage

Figure 16: Switching energy vs collector

current

Figure 17: Switching energy vs gate

resistance

Figure 18: Switching energy vs temperature

Figure 19: Switching energy vs. collector

emitter voltage

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Electrical characteristics

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Figure 20: Switching times vs. collector

current

Figure 21: Switching times vs. gate

resistance

Figure 22: Reverse recovery current vs. diode

current slope

Figure 23: Reverse recovery time vs. diode

current slope

Figure 24: Reverse recovery charge vs. diode

current slope

Figure 25: Reverse recovery energy vs. diode

current slope

Electrical characteristics

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Figure 26: Thermal impedance

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Electrical characteristics

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Figure 27: Thermal impedance for diode

Test circuits

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3 Test circuits

Figure 28: Test circuit for inductive load

switching

Figure 29: Gate charge test circuit

Figure 30: Switching waveform

A A

C

E

G

B

RG

+

-

G

C3.3

µF 1000

µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

AM01505v1

Vi≤ VGMAX

PW

IG=CONST

VCC

12 V 47 kΩ 1 kΩ

100 Ω

2.7 kΩ

47 kΩ

1 kΩ

2200

µF

D.U.T.

100 nF

VG

STGWT40HP65FB

Package information

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4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

Package information

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4.1 TO-3P package information

Figure 31: TO-3P package outline

8045950_B

STGWT40HP65FB

Package information

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Table 8: TO-3P package mechanical data

Dim.

mm

Min.

Typ.

Max.

A

4.60

4.80

5.00

A1

1.45

1.50

1.65

A2

1.20

1.40

1.60

b

0.80

1.00

1.20

b1

1.80

2.00

2.20

b2

2.80

3.00

3.20

c

0.55

0.60

0.75

D

19.70

19.90

20.10

D1

13.70

13.90

14.10

E

15.40

15.60

15.80

E1

13.40

13.60

13.80

E2

9.40

9.60

9.90

e

5.15

5.45

5.75

L

19.80

20.00

20.20

L1

3.30

3.50

3.70

L2

18.20

18.40

18.60

ØP

3.30

3.40

3.50

ØP1

3.10

3.20

3.30

Q

4.80

5.00

5.20

Q1

3.60

3.80

4

Revision history

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5 Revision history

Table 9: Document revision history

Date

Revision

Changes

20-Oct-2015

1

First release.

01-Mar-2016

2

Updated features in cover page.

Inserted Section 2.1: "Electrical characteristics (curves)".

Minor text changes

13-Jul-2016

3

Document status promoted from preliminary to production data.

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