V
RRM
= 20 V - 100 V
I
F
= 600 A
Features
• High Surge Capability Twin Tower Package
• Types up to 100 V V
RR
M
Parameter Symbol MBR60020CT (R) MBR60030CT (R) Unit
Repetitive peak reverse
V
20
30
V
Silicon Power
Schottk
y
Diode
MBR60020CT thru MBR60040CTR
MBR60040CT (R)
35
MBR60035CT (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
40
voltage
V
RRM
20
30
V
RMS reverse voltage V
RMS
14 21 V
DC blocking voltage V
DC
20 30 V
Continuous forward
current I
F
600 600 A
Operating temperature T
j
-40 to 150 -40 to 150 °C
Storage temperature T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBR60020CT (R) MBR60030CT (R) Unit
Diode forward voltage 0.75 0.75
11
20 20
Thermal characteristics
Thermal resistance,
junction - case R
thJC
0.12 0.12 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half
Sine Wave
I
F,SM
Reverse current I
R
V
F
20
A4000
V
R
= 20 V, T
j
= 25 °C
I
F
= 300 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
35
25
4000 4000
-40 to 175
600 600
4000
-40 to 175
MBR60040CT (R)
11
MBR60035CT (R)
0.12
V
R
= 20 V, T
j
= 125 °C
0.12
0.75 0.75
20 mA
V
-40 to 150 -40 to 150
T
C
= 25 °C, t
p
= 8.3 m
s
40
28
4035
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MBR60020CT thru MBR60040CTR
www.genesicsemi.com 2
