2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) 2N5432 -4 to -10 5 10 2.5 2N5433 -3 to -9 7 10 2.5 2N5434 -1 to -4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: 2N5432 <5 Fast Switching--tON: 2.5 ns High Off-Isolation--I D(off): 10 pA Low Capacitance: 11 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The 2N5432/5433/5434 are suitable for high-performance analog switching and amplifier applications. Breakdown voltage characteristics, low on-resistance, and very fast switching make these devices are ideal for a wide range of applications. The hermetically-sealed TO-206AC (TO-52) package is suitable for processing per MIL-S-19500 (see Military Information). For similar products in TO-236 (SOT-23) or TO-226AA (TO-92) packages, see the J/SST108 series data sheet. TO-206AC (TO-52) S 1 2 3 D G and Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Document Number: 70245 S-04028--Rev. F, 04-Jun-01 Notes a. Derate 2.4 mW/_C above 25_C www.vishay.com 7-1 2N5432/5433/5434 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5432 Parameter Symbol Test Conditions V(BR)GSS IG = -1 A , VDS = 0 V VGS(off) VDS = 5 V, ID = 3 nA Typa Min Max 2N5433 Min Max 2N5434 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb -32 Gate Operating Currentc Drain Cutoff Current -25 -25 V IDSS -4 VDS = 15 V, VGS = 0 V IGSS IG ID(off) Drain-Source On-Voltage VDS(on) Drain-Source On-Resistance rDS(on) Gate-Source Forward Voltagec VGS(F) TA = 150_C -10 150 VGS = -15 V, VDS = 0 V Gate Reverse Current -25 -3 -9 100 -1 -4 30 mA -5 -200 -200 -200 pA -10 -200 -200 -200 nA VDG = 10 V, ID = 10 mA -10 VDS = 5 V, VGS = -10 V 10 200 200 200 20 200 200 200 nA 50 70 100 mV 5 7 10 TA = 150_C VGS = 0 V, ID = 10 mA 2 IG = 1 mA , VDS = 0 V pA 0.7 V 17 mS 600 S Dynamic Common-Source Forward Transconductancec gfs Common-Source Output Conductancec gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 5 V, ID = 10 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = -10 V f = 1 MHz VDS = 5 V, ID = 10 mA f = 1 kHz 5 7 10 20 30 30 30 11 15 15 15 pF nV Hz 3.5 Switching Turn-On Timeb Turn-Off Timeb td(on) 2 4 4 4 tr 0.5 1 1 1 4 6 6 6 18 30 30 30 td(off) VDD = 1.5 V, VGS(H) = 0 V See Switching Circuit tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. c. This parameter not registered with JEDEC. www.vishay.com 7-2 ns NIP Document Number: 70245 S-04028--Rev. F, 04-Jun-01 2N5432/5433/5434 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS 600 IDSS 8 400 4 200 0 gfs - Forward Transconductance (mS) 800 -4 -8 -6 VGS(off) - Gate-Source Cutoff Voltage (V) 160 120 20 gos 40 10 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics 100 VGS(off) = -2 V VGS(off) = -4 V 80 60 ID - Drain Current (mA) 80 VGS = 0 V -0.2 V 40 -0.4 V -0.6 V 20 VGS = 0 V 60 -0.5 V 40 -1.0 V -1.5 V 20 -0.8 V -0.2 V 0 0 0 2 6 8 4 VDS - Drain-Source Voltage (V) 10 0 0.3 0.4 0.1 0.2 VDS - Drain-Source Voltage (V) Turn-On Switching 0.5 Turn-Off Switching 5 30 td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V tr approximately independent of ID VDD = 1.5 V, RG = 50 VGS(L) = -10 V td(on) 3 24 Switching Time (ns) 4 Switching Time (ns) -10 Output Characteristics 100 ID - Drain Current (mA) 30 gfs 80 -10 -2 40 0 0 0 50 gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz gos - Output Conductance (S) 16 12 200 1000 rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V IDSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 20 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage ID = 25 mA ID = 10 mA 2 1 tf 18 VGS(off) = -8 V 12 td(off) 6 tr 0 VGS(off) = -2 V 0 0 -6 -8 -4 VGS(off) - Gate-Source Cutoff Voltage (V) -2 Document Number: 70245 S-04028--Rev. F, 04-Jun-01 -10 0 5 10 15 ID - Drain Current (mA) 20 25 www.vishay.com 7-3 2N5432/5433/5434 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current On-Resistance vs. Temperature 40 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) 50 TA = 25_C 40 30 VGS(off) = -2 V 20 -4 V 10 -8 V ID = 10 mA rDS changes X 0.7%/_C 32 24 VGS(off) = -2 V 16 -4 V -8 V 8 0 0 1 10 ID - Drain Current (mA) -55 100 -35 -15 25 5 45 65 TA - Temperature (_C) 85 105 125 Gate Leakage Current Capacitance vs. Gate-Source Voltage 100 nA 100 TA = 125_C VDS = 0 V f = 1 MHz ID = 10 mA 80 10 nA IG - Gate Leakage Capacitance (pF) 5 mA 60 40 Ciss 1 mA IGSS @ 125_C 100 pA 5 mA TA = 25_C 10 pA Crss 20 1 nA 1 mA 10 mA IGSS @ 25_C 0 1 pA 0 -4 -8 -12 -16 0 -20 VGS - Gate-Source Voltage (V) Noise Voltage vs. Frequency 12 16 20 Transconductance vs. Drain Current 100 VGS(off) = -4 V Hz gfs - Forward Transconductance (mS) VDS = 5 V en - Noise Voltage nV / 8 VDG - Drain-Gate Voltage (V) 100 10 ID = 10 mA ID = 40 mA TA = -55_C 25_C 10 125_C VDS = 5 V f = 1 kHz 1 1 10 100 1k f - Frequency (Hz) www.vishay.com 7-4 4 10 k 100 k 1 10 100 ID - Drain Current (mA) Document Number: 70245 S-04028--Rev. F, 04-Jun-01 2N5432/5433/5434 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Common Gate Input Admittance Common Gate Forward Admittance 100 100 gig -gfg 10 (mS) (mS) 10 bfg 1 1 big TA = 25_C VDG = 20 V ID = 20 mA TA = 25_C VDG = 20 V ID = 20 mA 0.1 0.1 20 10 50 100 10 50 20 f - Frequency (MHz) 100 f - Frequency (MHz) Common Gate Reverse Admittance Common Gate Output Admittance 10 100 TA = 25_C VDG = 20 V ID = 20 mA 1.0 TA = 25_C VDG = 20 V ID = 20 mA 10 bog (mS) (mS) -grg -brg gog 0.1 1 0.01 0.1 10 50 20 f - Frequency (MHz) 100 10 20 50 f - Frequency (MHz) 100 VDD SWITCHING TIME TEST CIRCUIT RL 2N5432 2N5433 2N5434 VGS(L) -12 V -12 V -12 V RL* 145 143 140 ID(on) 10 mA 10 mA 10 mA OUT VGS(H) VGS(L) 1 k *Non-inductive INPUT PULSE SAMPLING SCOPE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pF Document Number: 70245 S-04028--Rev. F, 04-Jun-01 51 VIN Scope 51 www.vishay.com 7-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1