2N5432/5433/5434
Vishay Siliconix
Document Number: 70245
S-04028—Rev. F, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max ()ID(off) Typ (pA) tON Typ (ns)
2N5432 –4 to –10 5 10 2.5
2N5433 –3 to –9 7 10 2.5
2N5434 –1 to –4 10 10 2.5
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 2N5432 <5
DFast Switching—tON: 2.5 ns
DHigh Off-Isolation—ID(off): 10 pA
DLow Capacitance: 11 pF
DLow Insertion Loss
DLow Error Voltage
DHigh-Speed Analog Circuit Performance
DNegligible “Off-Error,” Excellent Accuracy
DGood Frequency Response
DEliminates Additional Buffering
DAnalog Switches
DChoppers
DSample-and-Hold
DNormally “On” Switches
DCurrent Limiters
DESCRIPTION
The 2N5432/5433/5434 are suitable for high-performance
analog switching and amplifier applications. Breakdown
voltage characteristics, low on-resistance, and very fast
switching make these devices are ideal for a wide range of
applications.
The hermetically-sealed TO-206AC (TO-52) package is
suitable for processing per MIL-S-19500 (see Military
Information). For similar products in TO-236 (SOT-23) or
TO-226AA (TO-92) packages, see the J/SST108 series data
sheet.
G and Case
TO-206AC
(TO-52)
D
S
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.4 mW/_C above 25_C
2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70245
S-04028—Rev. F, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5432 2N5433 2N5434
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 A , VDS = 0 V –32 –25 –25 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 5 V, ID = 3 nA –4–10 –3–9–1–4V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 150 100 30 mA
VGS = –15 V, VDS = 0 V –5–200 –200 –200 pA
Gate Reverse Current IGSS TA = 150_C–10 –200 –200 –200 nA
Gate Operating CurrentcIGVDG = 10 V, ID = 10 mA –10
VDS = 5 V, VGS = –10 V 10 200 200 200 pA
Drain Cutoff Current ID(off) TA = 150_C20 200 200 200 nA
Drain-Source On-Voltage VDS(on) 50 70 100 mV
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 10 mA 2 5 7 10
Gate-Source Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductancecgfs VDS = 5 V, ID = 10 mA 17 mS
Common-Source
Output Conductancecgos
VDS = 5 V, ID = 10 mA
f = 1 kHz 600 S
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA
f = 1 kHz 5 7 10
Common-Source
Input Capacitance Ciss VDS = 0 V, VGS = –10 V 20 30 30 30
Common-Source
Reverse Transfer Capacitance Crss
VDS = 0 V, VGS = –10 V
f = 1 MHz 11 15 15 15 pF
Equivalent Input
Noise VoltagecenVDS = 5 V, ID = 10 mA
f = 1 kHz 3.5 nV⁄
√Hz
Switching
td(on) 2 4 4 4
T urn-On TimebtrVDD = 1.5 V, VGS(H) = 0 V 0.5 1 1 1
btd(off)
VDD = 1.5 V, VGS(H) = 0 V
See Switching Circuit 4 6 6 6 ns
Turn-Off Timebtf18 30 30 30
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NIP
b. Pulse test: PW v300 s duty cycle v3%.
c. This parameter not registered with JEDEC.
2N5432/5433/5434
Vishay Siliconix
Document Number: 70245
S-04028—Rev. F, 04-Jun-01 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20
0–8–10–4
8
4
0
1000
800
400
200
0
16
12 600
–2–6
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
IDSS
rDS
200
0
160
80
40
0–8–10–4
50
40
20
10
0
120 30
–2–6
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
gfs and gos @ VDS = 5 V
VGS = 0 V, f = 1 kHz
gfs
gos
100
06810
40
20
0
80
60
24
Output Characteristics
VDS – Drain-Source Voltage (V)
–0.4 V
–0.6 V
–0.8 V
–0.2 V
VGS(off) = –2 V
VGS = 0 V
100
0 0.3 0.4 0.5
40
20
0
80
60
0.1 0.2
Output Characteristics
VDS – Drain-Source Voltage (V)
–0.5 V
–1.0 V
–1.5 V
–0.2 V
VGS(off) = –4 V
VGS = 0 V
5
0–6–8–10
4
3
2
1
0
30
0152010525
24
18
12
6
0
–2–4
Turn-On Switching Turn-Off Switching
Switching T ime (ns)
VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)
tr approximately independent of ID
VDD = 1.5 V, RG = 50
VGS(L) = –10 V
ID = 25 mA
ID = 10 mA
trtd(off)
VGS(off) = –2 V
td(off) independent
of device VGS(off)
VDD = 1.5 V, VGS(L) = –10 V
VGS(off) = –8 V
Switching T ime (ns)
td(on) tf
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
gos – Output Conductance (S)
2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70245
S-04028—Rev. F, 04-Jun-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
20
10
01 10 100
40
30
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = –2 V
–4 V
–8 V
40
–55 25 125
32
24
16
8
0–15 85
–35 5 45 65 105
On-Resistance vs. Temperature
TA – Temperature (_C)
VGS(off) = –2 V
–4 V
–8 V
ID = 10 mA
rDS changes X 0.7%/_C
100
0–12 –16–8–4–20
40
20
0
80
60
Capacitance vs. Gate-Source Voltage
Capacitance (pF)
VGS – Gate-Source Voltage (V)
VDS = 0 V
f = 1 MHz
Ciss
Crss
Gate Leakage Current
04812
1 pA
10 pA
100 pA
1 nA
10 nA
16 20
100 nA
VDG – Drain-Gate Voltage (V)
IGSS @ 125_C
TA = 125_C
TA = 25_C
5 mA
IGSS @ 25_C
10 mA
1 mA
100
10
110 100 1 k 100 k10 k
Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 5 V
ID = 10 mA
ID = 40 mA
100
10
11 10 100
Transconductance vs. Drain Current
ID – Drain Current (mA)
VDS = 5 V
f = 1 kHz
TA = –55_C
125_C
VGS(off) = –4 V
ID = 10 mA
5 mA
1 mA
25_C
en – Noise Voltage nV / Hz rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS) rDS(on) – Drain-Source On-Resistance ( Ω )
IG – Gate Leakage
2N5432/5433/5434
Vishay Siliconix
Document Number: 70245
S-04028—Rev. F, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
100
10
1
0.1 10 100
50
Common Gate Input Admittance
(mS)
f – Frequency (MHz)
gig
big
TA = 25_C
VDG = 20 V
ID = 20 mA
20
100
10
1
0.1 10 10050
Common Gate Forward Admittance
–gfg
bfg
TA = 25_C
VDG = 20 V
ID = 20 mA
(mS)
f – Frequency (MHz)
20
10
1.0
0.1
0.01 10 10050
Common Gate Reverse Admittance
–grg
–brg
(mS)
f – Frequency (MHz)
TA = 25_C
VDG = 20 V
ID = 20 mA
20
100
10
1
0.1 10 10050
Common Gate Output Admittance
bog
gog
(mS)
f – Frequency (MHz)
TA = 25_C
VDG = 20 V
ID = 20 mA
20
SWITCHING TIME TEST CIRCUIT
2N5432 2N5433 2N5434
VGS(L) –12 V –12 V –12 V
RL*145 143 140
ID(on) 10 mA 10 mA 10 mA
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
51 Ω
51 Ω
1 kΩ
VIN
Scope
VDD
RL
OUT
VGS(H)
VGS(L)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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