ky SGS-THOMSON MICROELECTRONICS BSP40/41 BSP42/43 MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE BSP30, BSP31, BSP32 AND BSP33 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B EO (3) 5C06960 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BSP40/BSP41 BSP42/BSP43 Vcso |Collector-Base Voltage (le = 0) 70 90 Vv VcEO Collector-Emitter Voltage (lp = 0) 60 80 V Voces Collector-Emitter Voltage (VBe = 0) 70 90 Vv Veso |Emitter-Base Voltage (Ic = 0) 5 Vv Ic Collector Current 1 A IB Base Current 0.1 A Prot Total Dissipation at T, = 25C 2 WwW Tstg Storage Temperature -65 to 150 c Tj Max. Operating Junction Temperature 150 C October 1995 1/4 BSP40/41/42/43 THERMAL DATA Rthj-amb | Thermal Resistance Junction-Ambient Max 62.5 C/W Rthj-tab |Thermal Resistance Junction-Collecor Tab Max 8 C/W Mounted on aceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tease = 25 C unlessotherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit IcBo Collector Cut-off Vcp = 60 V 100 nA Current (le = 0) Vcp =60V Tj) =150C 50 uA Viarycpo |Collector-Base lo = 100 HA Breakdown Voltage for BSP40/BSP41 70 Vv (le = 0) for BSP42/BSP43 90 Vv Vipryceo* | Collector-Emitter Ic = 10 mA Breakdown Voltage for BSP40/BSP41 60 Vv (lp = 0) for BSP42/BSP43 80 Vv Vipryces |Collector-Emitter Ic = 10 pA Breakdown Voltage for BSP40/BSP41 70 Vv (VBE = 0) for BSP42/BSP43 90 Vv ViaRyeso |Emitter-Base lc=10nA 5 Vv Breakdown Voltage (Ic = 0) Vce(saty* | Collector-Emitter Ic=150mA lp=15mMA 0.25 Vv Saturation Voltage lo =500mA Ilp=50mA 0.5 V Vee(sat)* |Base-Emitter lc=150mA lp=15mMA 1 Vv Saturation Voltage lc=500mA_ Ilp=50mA 1.2 Vv hee* DC Current Gain for BSP40/BSP41 lo = 100 nA Vce=5V 10 lo=100mMA Vce=5V 40 120 lo =500mMA VceE=5V 30 for BSP42/BSP43 lo = 100 nA Vce=5V 30 le=100MmMA VceE=5V 100 300 lo =500mMA VceE=5V 50 fr Transition Frequency Ic = 50 MA Vce = 10 V f = 35 MHz 100 MHz CcBo Collector-Base le =0 Vep = 10 V f = 1 MHz 20 pF Capacitance CEBo Emitter-Base lc = 0 Vep =0.5V f=1MHz 90 pF Capacitance ton Turn-on Time lo =100 mA lpi =-lp2 =5MA 250 ns loft Turn-on Time 1000 ns * Pulsed: Pulse duration = 300 1s, duty cycle < 1.5% 2/4 ka SGS-:THOMSON Tf MICROELECTRONICS BSP40/41/42/43 SOT223 MECHANICAL DATA mm mils DIM. MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 l2 a d ' - c je4 b Lal ral f B E 4 cI = g P008B 3/4 MITROELECTROMICS BSP40/41/42/43 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compments in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AS] Sicpon scmoncs