6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
Ratings Symbol 2N2369A 2N4449 All UA All UB All U Unit
Collector-Emitter Voltage VCEO 15 15 15 20 15 Vdc
Emitter-Base Voltage VEBO 4.5 4.5 4.5 6.0 4.5 Vdc
Collector-Base Voltage VCBO 40 40 40 40 40 Vdc
Collector-Emitter Voltage VCES 40 40 40 40 40 Vdc
Total Power Dissipation @ TA = +250C
@ TC = +250CPT
0.50(1)
1.2(2) 0.50(1)
1.2(2) 0.50(5)
1.4(7) 0.40(6)
1.3(8) 0.60(
3
1.5(4)
W
W
Operating & Storage Junction
Temperature Range Top, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N2369A 2N4449 All UA All UB All U Unit
Thermal Resistance, Junction-to -Case RθJC 146 146 125 135 117 0C/W
Thermal Resistance, Junction-to-Ambient RθJA 325 325 350 437 291 0C/W
1) Derate linearly 3.08 mW/0C above TA = +37.50C 5) Derate linearly 2.86 mW/0C above TC = +63. 50C
2) Derate linearly 6.85 mW/0C above TC = +250C 6) Derate linearly 2.29 mW/0C above TC = +63.50C
3) Derate linearly 3.44 mW/0C above TA = +63.50C 7) Derate linearly 8.00 mW/0C above TC = +63. 50C
4) Derate linearly 8.55 mW/0C above TC = +250C 8) Derate linearly 7.41 mW/0C above TC = +63.50C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 15 Vdc
Collector-Emitter Cutoff Current
VCE = 20 Vdc ICES 0.4 µAdc
Emitter-Base Breakdown Voltage
VEB = 4.5 2N2369A, 2N4449
VEB = 4.0 Vdc IEBO 10
0.25 µAdc
Collector-Base Breakdown Voltage
VCB = 75 Vdc
VCB = 20 Vdc ICBO 10
0.2 µAdc
TECHNICAL DATA
2N2369A 2N4449
TO-18 (TO-206AA) TO-46 (TO-206AB)
2N2369A, U, UA, JAN, JTX, JTXV
2N2369AUB JAN, JTX, JTXV
2N4449, U, UA, JAN, JTX, JTXV
Processed per MIL-PRF-19500/317
NPN SWITCHING SILICON
TRANSISTORS
MIL-PRF
QML
DEVICES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 2 of 2
2N2369A, AU, AUA, AUB, 2N4449, U, UA, UB JAN SERIES
ELECTRICAL CHARACTERISTICS Con’t
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (1)
Forward-Current Tran sfer Ratio
IC = 10 mAdc, VCE = 0.35 Vdc
IC = 30 mAdc, VCE = 0.4 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 100 mAdc, VCE = 1.0 Vdc
hFE
40
30
40
20
120
120
120
120
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
VCE(sat) 0.20
0.25
0.45
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
VBE(sat) 0.70
0.80
0.85
0.90
1.20
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz hfe5.0 10
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 4.0 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 5.0 pF
(1)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc ton 12 ηs
Turn-Off Time
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc toff 18 ηs
Charge Storage Time
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc ts13 ηs
