TECHNICAL DATA MIL-PRF 2N2369A, U, UA, JAN, JTX, JTXV 2N2369AUB JAN, JTX, JTXV 2N4449, U, UA, JAN, JTX, JTXV QML DEVICES Processed per MIL-PRF-19500/317 NPN SWITCHING SILICON TRANSISTORS 2N2369A 2N4449 TO-18 (TO-206AA) TO-46 (TO-206AB) MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Junction Temperature Range Symbol VCEO VEBO VCBO VCES PT 2N2369A 2N4449 15 4.5 40 40 0.50(1) 1.2(2) 15 4.5 40 40 0.50(1) 1.2(2) All UA 15 4.5 40 40 0.50(5) 1.4(7) All UB 20 6.0 40 40 0.40(6) 1.3(8) All U 15 4.5 40 40 0.60( 3 Unit Vdc Vdc Vdc Vdc W W 1.5(4) 0 C -65 to +200 Top, Tstg THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol 2N2369A 2N4449 RJC 146 146 All UA 125 All UB 135 All U 117 RJA 325 325 350 437 291 1) Derate linearly 3.08 mW/0C above TA = +37.50C 2) Derate linearly 6.85 mW/0C above TC = +250C 3) Derate linearly 3.44 mW/0C above TA = +63.50C 4) Derate linearly 8.55 mW/0C above TC = +250C Unit C/W 0 0 C/W 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly 2.29 mW/0C above TC = +63.50C 7) Derate linearly 8.00 mW/0C above TC = +63.50C 8) Derate linearly 7.41 mW/0C above TC = +63.50C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. V(BR)CEO 15 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 20 Vdc Emitter-Base Breakdown Voltage VEB = 4.5 2N2369A, 2N4449 VEB = 4.0 Vdc Collector-Base Breakdown Voltage VCB = 75 Vdc VCB = 20 Vdc Vdc ICES 0.4 Adc IEBO 10 0.25 Adc ICBO 10 0.2 Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 1 of 2 2N2369A, AU, AUA, AUB, 2N4449, U, UA, UB JAN SERIES ELECTRICAL CHARACTERISTICS Con't Characteristics Symbol Min. Max. hFE 40 30 40 20 120 120 120 120 Unit ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 0.35 Vdc IC = 30 mAdc, VCE = 0.4 Vdc IC = 10 mAdc, VCE = 1.0 Vdc IC = 100 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc 0.20 0.25 0.45 Vdc Vdc 0.80 0.85 0.90 1.20 5.0 10 VCE(sat) VBE(sat) 0.70 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz hfe Cobo 4.0 pF Cibo 5.0 pF t on 12 s t off 18 s t 13 s (1)Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. SWITCHING CHARACTERISTICS Turn-On Time IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc Turn-Off Time IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc Charge Storage Time IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc s 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 2 of 2