fAAMOSPEC NPN SILICON POWER TRANSISTORS ... designed for use in audio frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage Vee;say 1-0V(Max) @1,=3.0A,1,=0.3A * DC Current Gain hFE= 60-300@1,,= 0.5A * Complememtary to PNP 2SB834 MAXIMUM RATINGS NPN 2SD880 3 AMPERE POWER TRANASISTORS 60 VOLTS 30 WATTS PIN 1.BASE Characteristic Symbol 2SD880 Unit Collector-Emitter Voltage Voeo 60 Vv Collector-Base Voltage Vepo 60 Vv Emitter-Base Voltage Vero 7.0 Collector Current - Continuous le 3.0 - Peak lom 6.0 Base current lp 0.5 A Total Power Dissipation @T, = 25C Pp 30 Ww Derate above 25C 0.24 wc Operating and Storage Junction Ty Test C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R6 jc 4.16 CAN FIGURE -1 POWER DERATING 40 G 35 E 30 5 9 25 & 20 2 45 a 10 s & 5 & o o 25 50 75 100 125 150 T, TEMPERATURE( C) 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 | 15.31 B 9.78 | 10.42 Cc 5.01 6.52 D 13.06 | 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 oO 3.70 3.902SD880 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Vieryceo Vv (Ig= 50 mA, I; =O ) 60 Emitter-Base Breakdown Voitage VieR)EBO Vv (l,= 1.0 mA, |, =0) 7.0 Collector Cutoff Current logo uA ( Vep= 60 V, I= 0) 100 Emitter Cutoff Current leso uA (Veg= 7.0 V, I= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (1_= 0.5 A, Vep= 5.0V) * hFE(2) 60 300 Collector-Emitter Saturation Voltage VoE;saty V (1,= 3.0 A, I,= 300 mA) 1.0 Base-Emitter On Voltage Vee;on) Vv (I,= 0.5 A, Veg=5.0 V) 1.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f, MHz (Ig = 0.5 A, Veg = 5.0 V, f = 1.0 MHz ) 3.0(typ) SWITCHING CHARATERISTICS Turn-on Time Voee= 30 V,I,= 2.0A t on 1.2 us lea= -!po= 200 mA 20 Storage Time BiV= 36 us t. . us Fail Time t, 1.1 us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0% * hFE(2) Classification - [60 120|100 Y 200/150 GR 3002SD880 NPN (8 Ic - Vee DC CURRENT GAIN To#i00C < Zz E 5 5 nd ce E g e 9 5 8 Ip=10 mA 9 4 ~ 3 u oO x To 225C 0 1.0 2.0 3.0 4.0 5.0 6.0 2 5 10 20 50 100 200 500 1k 3k Vee, COLLECTOR-EMITTER VOLTAGE (V) le , COLLECTOR CURRENT (mA) Ic - Vbe Veeteaty le 1.0 2 Vce=5.0V 5 ~ u 5 9 3 & o o x To100 C 25 - -25 w o 5 E o4 | $ 8 5 & 9 02 04 06 08 1.0 12 1.4 16 2 5 10 20 aE) 500 ik 2K 5k Vee, BASE - EMITTER VOLTAGE (V) IC , COLLECTOR CURRENT (mA) ACTIVE-REGION SAFE OPERATING AREA (SOA) 100ms 10 ms There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate [o-Voe a limits of the transistor that must be observed for reliable & operation i.e., the transistor must not be subjected to z greater dissipation than curves indicate. z The data of SOA curve is base on Typq=150 C:T is 3 variable depending on conditions. second breakdown 8 ~-BondngWireLimit pulse limits are valid for duty cycles to 10% provided ij Themnaly Umtsd um Typgs150C,At high case temperatures, thermal limita - 3 at T=25C (Single Puse) tion will reduce the power that can be handled to values ~. less than the limitations imposed by second breakdown. 40 2.0 5.0 7.0 10 20 50 70 100 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)