1N4740A - Renesas Technology / Hitachi Semiconductor

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regar ding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

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Corporation or a third party.

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circuit application examples contained in these materials.

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contained therein.

1N4728A through 1N4753A

Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply

ADE-208-136C (Z)

Rev.3

Sep. 2000

Features

• Glass package DO-41 structure ensures high reliability.

• Wide spectrum from 3.3V through 36V of zener voltage provide flexible application.

Ordering Information

Type No. Mark Package Code

1N4728A through 1N4753A Type No. DO-41

Pin Arrangement

1. Cathode

2. Anode

Cathode band

Type No.

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Value Unit

Power dissipation Pd *1 1.0 W

Junction temperature Tj 200 °C

Storage temperature Tstg −65 to +200 °C

Note: 1. See Fig.3

1N4728A through 1N4753A

Rev.3, Sep. 2000, page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Z (V) *1 I

R (µ

µµ

µA) ZZT (Ω

ΩΩ

Ω) ZZK (Ω

ΩΩ

Ω) I RSM (mA)*2

Test

Condition

Test

Condition

Test

Condition

Test

Condition

Type No. Max IZ (mA) Max VR (V) Max IZT (mA) Max IZK (mA) Max

1N4728A 3.3 ± 5 (%) 76 100 1.0 10 76 400 1.0 1380

1N4729A 3.6 ± 5 (%) 69 100 1.0 10 69 400 1.0 1260

1N4730A 3.9 ± 5 (%) 64 50 1.0 9 64 400 1.0 1190

1N4731A 4.3 ± 5 (%) 58 10 1.0 9 58 400 1.0 1070

1N4732A 4.7 ± 5 (%) 53 10 1.0 8 53 500 1.0 970

1N4733A 5.1 ± 5 (%) 49 10 1.0 7 49 550 1.0 890

1N4734A 5.6 ± 5 (%) 45 10 2.0 5 45 600 1.0 810

1N4735A 6.2 ± 5 (%) 41 10 3.0 2 41 700 1.0 730

1N4736A 6.8 ± 5 (%) 37 10 4.0 3.5 37 700 1.0 660

1N4737A 7.5 ± 5 (%) 34 10 5.0 4 34 700 0.5 605

1N4738A 8.2 ± 5 (%) 31 10 6.0 4.5 31 700 0.5 550

1N4739A 9.1 ± 5 (%) 28 10 7.0 5 28 700 0.5 500

1N4740A 10 ± 5 (%) 25 10 7.6 7 25 700 0.25 454

1N4741A 11 ± 5 (%) 23 5 8.4 8 23 700 0.25 414

1N4742A 12 ± 5 (%) 21 5 9.1 9 21 700 0.25 380

1N4743A 13 ± 5 (%) 19 5 9.9 10 19 700 0.25 344

1N4744A 15 ± 5 (%) 17 5 11.4 14 17 700 0.25 304

1N4745A 16 ± 5 (%) 15.5 5 12.2 16 15.5 750 0.25 285

1N4746A 18 ± 5 (%) 14.0 5 13.7 20 14.0 750 0.25 250

1N4747A 20 ± 5 (%) 12.5 5 15.2 22 12.5 750 0.25 225

1N4748A 22 ± 5 (%) 11.5 5 16.7 23 11.5 750 0.25 205

1N4749A 24 ± 5 (%) 10.5 5 18.2 25 10.5 750 0.25 190

1N4750A 27 ± 5 (%) 9.5 5 20.6 35 9.5 750 0.25 170

1N4751A 30 ± 5 (%) 8.5 5 22.8 40 8.5 1000 0.25 150

1N4752A 33 ± 5 (%) 7.5 5 25.1 45 7.5 1000 0.25 135

1N4753A 36 ± 5 (%) 7.0 5 27.4 50 7.0 1000 0.25 125

Notes: 1. Tested with DC

2. t = 1/120 sec reverse direction 1pulse

1N4728A through 1N4753A

Rev.3, Sep. 2000, page 3 of 6

Main Characteristic

100

Zener Current I Z(mA)

Zener Voltage VZ(V)

10 20 30 40

1N4730A

1N4732A

1N4734A

1N4736A

1N4738A

1N4739A

1N4740A

1N4746A

1N4747A

1N4748A

1N4749A

1N4728A

1N4750A

1N4751A

1N4752A

1N4753A

1N4741A

1N4742A

1N4743A

1N4744A

1N4745A

010

20 30 40

Zener Voltage V (V)

Zener Voltage

Temperature Coefficient (%/°C)

−10

−20

−30

−40

−50

0.10

Zener Voltage

Temperature Coefficient (mV/°C)

0.08

0.06

0.04

0.02

−0.02

−0.04

−0.06

−0.08

−0.1

%/°C

mV/°C

1.0

0.8

0.6

0.4

0.2

200

150100

Ambient Temperature Ta (°C)

Power Dissipation P (W)

10mm land

10 mm

20mm

Printed circuit board

100 180 1.6t mm

Material: Glass epoxy

××

3/8inch

20mm land

Fig.1 Zener current Vs. Zener voltage

Fig.3 Power Dissipation Vs. Ambient Temperature

Fig.2 Temperature Coefficient Vs. Zener voltage

1N4728A through 1N4753A

Rev.3, Sep. 2000, page 4 of 6

10 10 10 1.0 10 10 10

1.0

Time t (s)

Transient Thermal Impedance Z (°C/W)

−1

−2−3

Ta = 25°C

nonrepetitive

PRSM

Time t (s)

10 10 1.0

10 10

1.0

Nonrepetitive Surge Reverses Power P (W)

RSM

−5−4−3−2−1

Fig.4 Surge Reverse Power Ratings

Fig.5 Transient Thermal Impedance

1N4730A

1N4734A

1N4740A

1N4730A

1N4734A

1N4740A

1N4728A through 1N4753A

Rev.3, Sep. 2000, page 5 of 6

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DO-41

Conforms

0.38 g

Unit: mm

26.0 Min 5.2 Max 26.0 Min

3.0

0.8

1N4728A through 1N4753A

Rev.3, Sep. 2000, page 6 of 6

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

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Singapore 049318

Tel : <65>-538-6533/538-8577

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URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

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(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

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7/F., North Tower

World Finance Centre,

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Tsim Sha Tsui, Kowloon

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://semiconductor.hitachi.com.hk

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Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.

Electronic Components Group

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585200

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 4.0