©
1995
DATA SHEET
GaAs INTEGRATED CIRCUIT
µµ
µµ
µ
PG110B
2 to 8 GHz WIDE BAND AMPLIFIER
DESCRIPTION
The
µ
PG110B is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 GHz to 8 GHz.
The device is most suitable for the gain stage required high gain characteristic of the microwave communication
system and the measurement equipment.
FEATURES
• Ultra wide band: 2 to 8 GHz
• High gain: 15 dB TYP. @f = 2 to 8 GHz
• Medium power: +14 dBm TYP. @f = 2 to 8 GHz
• Input/Output impedance matched to 50 Ω
• Hermetically sealed package assures high reliability
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain Voltage VDD +10 V
Input Voltage VIN –5 to +0.6 V
Input Power Pin +10 dBm
Total Power Dissipation Ptot 1.5 W
Operating Case Temperature TC–65 to +125 ˚ C
Storage Temperature Tstg –65 to +175 ˚ C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Power Gain Gp 12 15 dB VDD = +8 V
Gain Flatness ∆GL±1.5 dB f = 2.0 to 8.0 GHz
Input Return Loss RLin 610 dB
Output Return Loss RLout 710 dB
Isolation ISL 30 40 dB
Pout at 1 dB G.C.P. PO(1 dB) 10 14 dBm
Supply Current IDD 65 135 180 mA
G.C.P. : Gain Compression Point
Take the heat radiation into account sufficiently to prevent the case temperature from exceeding the absolute
maximum rating.
Document No. P10869EJ2V0DS00 (2nd edition)
(Previous No. ID-2235)
Date Published October 1995 P
Printed in Japan
2
µµ
µµ
µ
PG110B
TYPICAL CHARACTERISTICS (TA = 25 °C)
POWER DERATING CURVE
T
C
– Case Temperature – ˚C
0
1.5
1.0
Ptot – Total Power Dissipation – W
50 100 150 200 250
2.0
2.5
0.5
93
POWER GAIN vs. FREQUENCY
V
DD
= +8 V
I
DD
= 132 mA
f – Frequency – GHz
5 6 7 8 9 100 1 2 3 4
30
20
10
0
Gp – Power Gain – dB
3
µµ
µµ
µ
PG110B
INPUT RETURN LOSS vs. FREQUENCY
V
DD
= +8 V
I
DD
= 132 mA
f – Frequency – GHz
5 6 7 8 9 100 1 2 3 4
0
–10
–20
–30
RL
out
– Output Return Loss – dB
RL
in
– Input Return Loss – dB
RL
in
RL
out
ISOLATION vs. FREQUENCY
V
DD
= +8 V
I
DD
= 132 mA
f – Frequency – GHz
5 6 7 8 9 100 1 2 3 4
–20
–40
–60
–80
ISL – Isolation – dB
0
4
µµ
µµ
µ
PG110B
–20 –10 0 10
Pin – Input Power – dBm
Pout – Output Power – dBm
20
10
0
OUTPUT POWER vs. INPUT POWER
VDD = +8 V
IDD = 132 mA
f = 2 GHz
f = 5 GHz
f = 8 GHz
5
µµ
µµ
µ
PG110B
APPLICATION CIRCUIT
out
4
1
CASE
1000 pF
2
3
100 pF*
NON CONECTION (OPEN)
in
* Chip capacitor
V
DD
EQUIVALENT CIRCUIT
V
DD
Active
Load
L
L3
C
RF
OUT
C
3
L
3
R
F2
R
L2
L
L2
L
2
C
2
R
G3
R
G2
L
1
R
F1
C
1
L
L1
R
L1
L
in
IN
R
G1
R
S1
C
S
L
G1
C
4
6
µµ
µµ
µ
PG110B
PACKAGE DIMENSIONS (Unit: mm)
4.1 MIN.
1
2
4
3
0.6
±0.06
4.5 MAX.
0.4 ±0.06
4.6 MAX. 4.1 MIN.
1.48 MAX.
0.1 ±0.06
0.7
+0.2
–0.1
1: VDD
2: IN
3: NON CONNECTION
4: OUT
CASE: GND
7
µµ
µµ
µ
PG110B
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
[
µµ
µµ
µ
PG110B]
Soldering process Soldering conditions Symbol
Partial heating method Terminal temperature: 300 ˚C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
*: Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Note Do not apply more than a single process at once, except for “Partial heating method”.
ATTENTION
Take great care to prevent static electricity because the IC circuity is composed of GaAs MES FET.
µµ
µµ
µ
PG110B
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (GalIium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.