IRF7380QPBF - International Rectifier

HEXFET® Power MOSFET

Notes  through  are on page 8

SO-8

Top View

lAdvanced Process Technology

lUltra Low On-Resistance

lN Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

l150°C Operating Temperature

lLead-Free

Description

Additional features of These HEXFET Power

MOSFET's are a 150°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These benefits

combine to make this design an extremely

efficient and reliable device for use in a wide

variety of applications.

The efficient SO-8 package provides enhanced

thermal characteristics making it ideal in a variety

of power applications. This surface mount SO-8

can dramatically reduce board space and is also

available in Tape & Reel.

DSS

DS(on)

max

80V

73m

= 10V

2.2A

IRF7380QPbF

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

@ T

= 25°C Continuous Drain Current, VGS @ 10V

@ T

= 100°C Continuous Drain Current, VGS @ 10V A

Pulsed Drain Current

= 25°C Maximum Power Dissipation W

Linear Derating Factor W/°C

dv/dt Peak Diode Recovery dv/dt

V/ns

Operating Junction and °C

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

Junction-to-Drain Lead ––– 42 °C/W

Junction-to-Ambient (PCB Mount)

––– 62.5

Max.

3.6

2.9

± 20

0.02

2.3

2.0

-55 to + 150

IRF7380QPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V

(BR)DSS

J Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C

DS(on) Static Drain-to-Source On-Resistance ––– 61 73

GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V

DSS Drain-to-Source Leakage Current ––– ––– 20 μA

––– ––– 250

GSS Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

gfs Forward Transconductance 4.3 ––– ––– S

gTotal Gate Charge ––– 15 23

gs Gate-to-Source Charge ––– 2.9 ––– nC

gd Gate-to-Drain ("Miller") Charge ––– 4.5 –––

d(on) Turn-On Delay Time ––– 9.0 –––

rRise Time ––– 10 –––

d(off) Turn-Off Delay Time ––– 41 ––– ns

fFall Time ––– 17 –––

iss Input Capacitance ––– 660 –––

oss Output Capacitance ––– 110 –––

rss Reverse Transfer Capacitance ––– 15 ––– pF

oss Output Capacitance ––– 710 –––

oss Output Capacitance ––– 72 –––

oss

eff.

Effective Output Capacitance ––– 140 –––

Avalanche Characteristics

Parameter Units

Single Pulse Avalanche Energy

Avalanche Current

c

Diode Characteristics

Parameter Min. Typ. Max. Units

ISContinuous Source Current ––– ––– 3.6 A

(Body Diode)

ISM Pulsed Source Current ––– ––– 29 A

(Body Diode)

ch

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 50 ––– ns

Qrr Reverse Recovery Charge ––– 110 ––– nC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Typ.

–––

Conditions

VDS = 25V, ID = 2.2A

ID = 2.2A

VDS = 40V

Conditions

VGS = 10V

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

2.2

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25°C, IS = 2.2A, VGS = 0V

TJ = 25°C, IF = 2.2A, VDD = 40V

di/dt = 100A/μs

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 2.2A

VDS = VGS, ID = 250μA

VDS = 80V, VGS = 0V

VDS = 64V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

Max.

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 64V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 64V

VGS = 10V

VDD = 40V

ID = 2.2A

RG = 24Ω

IRF7380QPbF

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

V =

I =

10V

3.6A

3.0 4.0 5.0 6.0 7.0

VGS, Gate-to-Source Voltage (V)

100

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 150°C

VDS = 15V

20μs PULSE WIDTH

0.1 110 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

3.7V

20μs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V

10V

7.0V

5.0V

4.5V

4.3V

4.0V

BOTTOM 3.7V

0.1 110 100 1000

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

100

ID, Drain-to-Source Current (A)

3.7V

20μs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

7.0V

5.0V

4.5V

4.3V

4.0V

BOTTOM 3.7V

TJ, Junction Temperature (°C)

RDS(on), Drain-to-Source On Resistance

(Normalized)

IRF7380QPbF

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.0 0.5 1.0 1.5 2.0

V = 0 V

T = 150 C

J°

T = 25 C

J°

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100μsec

Fig 8. Maximum Safe Operating Area

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

VGS

= 0V, f = 1 MHZ

Ciss

= C

+ C

gd, C

SHORTED

Crss

= C

Coss

= C

+ C

Coss

Crss

Ciss

0 2 4 6 8 10 12 14 16

QG Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

VDS= 64V

VDS= 40V

VDS= 16V

ID= 2.1A

VSD, Source-to-Drain Voltage (V)

ISD, Reverse Drain Current (A)

IRF7380QPbF

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

I , Drain Current (A)

TA , Ambient Temperature (°C)

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes :

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7380QPbF

Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

D.U.T. V

3mA

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Charge

(BR)DSS

0.01

D.U.T

VDS

-V

DRIVER

15V

20V

25 50 75 100 125 150

120

160

200

TOP

BOTTOM

1.0A

1.8A

2.2A

0 5 10 15 20 25 30

ID , Drain Current (A)

RDS (on) , Drain-to-Source On Resistance (mΩ)

VGS = 10V

3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate -to -Source Voltage (V)

100

200

300

400

500

600

700

800

RDS(on), Drain-to -Source On Resistance (mΩ)

ID = 3.6A

Starting TJ, Junction Temperature (°C)

EAS, Single Pulse Avalanche Energy (mJ)

IRF7380QPbF

SO-8 Package Outline(Mosfet & Fetky)

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050] 8X 1.78

[

.070

]

4. OUT LI NE CONF ORMS T O JEDE C OUT L INE MS -01 2AA.

NOT ES :

1. DIME NS IONING & T OLERANCING PER AS ME Y14.5M-1994.

2. CONT ROL L ING DIMENS ION: MILL IMET ER

3. DIME NS IONS ARE S HOWN IN MILLIMET E RS [INCHE S ].

5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .

6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .

MOLD PROT RUS IONS NOT T O EXCE ED 0.25 [.010].

7 DIMENS ION IS T HE L E NGTH OF LEAD F OR S OLDERING T O

A SUB STRAT E.

MOLD PROT RUS IONS NOT T O EXCE ED 0.15 [.006].

Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

P = DISGNATES LEAD - FREE

EXAMPLE: THIS IS AN IRF7101 (MOS FET )

F 7101

XXXX

INTERNATIONAL

LOGO

RECTIFIER

PART NUMBER

LOT CODE

PRODUCT (OPTIONAL)

DAT E CODE (YWW)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7380QPbF

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

This product has been designed and qualified for the Industrial market.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting TJ = 25°C, L = 31mH

RG = 25Ω, IAS = 2.2A.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Notes:

 When mounted on 1 inch square copper board.

 Coss eff. is a fixed capacitance that gives the same charging time as

Coss while VDS is rising from 0 to 80% VDSS.

ISD ≤ 2.2A, di/dt ≤ 220A/μs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.

Date Comments

09/16/2013

•



Updated the Rthja from 50°C/W to 62.5°C/W, on page 1.

•



Converted the data sheet to IR Corproate Template.

Revision History