X0O\30O 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS SSDI 14830 Vailey View Avenue La Mirada, California 90638 P. O. Box 577 La Mirada, California 90637 (213) 921-8660 TWX 910-583-4807 CASE STYLE T JEDEC TO-61 ALL TERMINALS ISOLATED FROM CASE 1/470 UNE-2A orme ain PRICK Ou seh) es o10 = : ! = as oss 1 artes | oats oun peel ae 2 sau S170 mao ose cousctoa oes Ant mo 7 a Er yc oan MAXIMUM RATINGS FEATURES RADIATION TOLERANT FAST SWITCHING, 350 NSEC MAX ton HIGH FREQUENCY, TYPICAL f,, 100 MHZ BVCEO 90 VOLTS MIN, TYPICALLY 150 VOLTS HIGH LINEAR GAIN, LOW SATURATION VOLTAGE 200 C OPERATING, GOLD EUTECTIC DIE ATTACH DESIGNED FOR COMPLEMENTARY USE WITH SPT5330 Rating Symbol Value Unit Collector - Emitter Voltage Voeo Volts 90 Collector - Base Voltage Vepo 150 Volts Emitter - Base Voltage Vego 8 Volts Collector Current Ic 30 Amps Base Current ig 5 Amps Total Device Dissipation @ TC =100C Pp 80 Watts Derate above 100 ~C 800 mw/C Operating and Storage Temperature Tj, Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance, Junction to Case ROJC 1.25 CAN ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector - Emitter Breakdown Voltage* (Ig= 100 = mad) BVcEQ: 90 Vde Collector - Base Breakdown Voltage Vde (lp= 200 uAde) 8YcB0 150 Emitter - Base Breakdown Voltage (Ig= 200 uAdc) BVego 8 Vde 1/85 B346S NOTE: All specifications subject to change without notice. ELECTRICAL CHARACTERISTICS *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES **Typically 1 wAdc DISSIPATION DERATING CURVE 80 60 40 20 P Maximum Total Device DissipetionW P.O. Box 577, La Mirada, California 90637 75 100 #125 150 ke Cose Temperoture"C SOLID STATE DEVICES, INC. 175 200 Characteristics Symbol Min. Max. Unit Collector Cutoff Current (Vcg= 150 Vdc, Vpg= 500 mVdc) TcEv 10%** mAdc Collector Cutoff Current (VcR= 150 Vde, VBE = 500 mVde, TC= 150C) TcEV SO*ee | made Emitter Cutoff Current (ep= 8 Vde ) 'EBO 5 mAdc DC Current Gain* ig= 10 Adc, Voe= 2 Vdc) h 40 120 (ig = 30 AdeVogp= 3 Vdc) Fe 10 50 Collector - Emitter Saturation Voltage (Ip = 10 Adc, lg = 500 mAdc) Vog. (san 0.6 Vdc (Ig = 30 Adc. Ip = 3 Adc) 1.8 Base - Emitter Saturation Voltage (Ig = 10 Adc.ilg= 300 mAdc) Vpe (sat) 1.3 Vdc (lg = 30 Ad.ip= 3 Adc) 1.8 Current - Gain - Bandwith Product a ig= 3 Ades Vop = 10 Veo t= 10 Mt) nr 80 MHz Output Capacitance ~ a (Wop = 10 Vic lp=0.f= 1 Mbz) Con 500 mf Input Capacitance i , (Vpe= 1.0 VdeIg=0.f= 1 Mie) ip 1250 Hf Delay Time (Veo = 21 Vdc, ~ ty 7 Fise Time (ton? , * 350 ns Storage Time Ig = 10 Adc, (t 2) te Fall Time a1 = !g2 = 500 mAdc) off y 1.25 us iCollector CurrentA *kATypically 50 uAdc FORWARD BIAS DC SAFE OPERATION AREA (S.0.A. CURVE) oO CURVES APPLY BELOW RATED Voeo Ty = 25C 0 Saul .: Na xo) NE %,, NE TNS INS NON | a 4 Cy a x Or o4 02 on 1 2 4 7? 10 2 0 70 100 200 400 Veg Cotlector-Emitter VoltageV Telephone: (213) 921-9660 TWX 910-583-4807