VS-STPS1L30UPbF
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 1Document Number: 94324
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-STPS1L30UPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMB
IF(AV) 1.0 A
VR30 V
VF at IF0.30 V
IRM max. 15 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 3.0 mJ
Cathode Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 30 V
IFSM tp = 5 ms sine 360 A
VF1.0 Apk, TJ = 125 °C 0.30 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS1L30UPbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 106 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
360
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-STPS1L30UPbF
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 2Document Number: 94324
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
1 A TJ = 25 °C 0.420
V
2 A 0.470
1 A TJ = 125 °C 0.300
2 A 0.375
Maximum reverse leakage current IRM (1)
TJ = 25 °C
VR = Rated VR
0.2
mATJ = 100 °C 5.0
TJ = 125 °C 15
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -55 to +150 °C
Maximum thermal resistance,
junction to lead RthJL (2)
DC operation
25
°C/W
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) V13L
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-STPS1L30UPbF
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 3Document Number: 94324
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
0.1
1
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8
0
TJ = 125 °C
TJ = 25 °C
0.0001
0.001
1
10
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
20 30
10
0
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 30
200
TJ = 25 °C
90
100
110
120
130
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0.80.4 1.2 1.6
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.1
0.3
0.4
0.2
0.5
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0.4 0.8 1.61.2
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
VS-STPS1L30UPbF
www.vishay.com Vishay Semiconductors
Revision: 28-Aug-14 4Document Number: 94324
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-STPS1L30UPbF 5BT 3200 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95401
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
Tape and reel only
2- Schottky STPS series
3- Current rating (1 = 1 A)
4- L = low forward voltage
5- Voltage rating (30 = 30 V)
6- U = SMB
- PbF = lead (Pb)-free
7
Device code
51 32 4 6 7
VS- STPS 1 L 30 U PbF
1- Vishay Semiconductors product
Document Number: 95401 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SMB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in inches (millimeters)
Cathode band
DO-214AA (SMB)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 (5.59) REF.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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