APT5010JVRU2 44A 0.100 500V POWER MOS V (R) K S Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP(R) D * Faster Switching * 100% Avalanche Tested * Lower Leakage * Popular SOT-227 Package * Single Die MOSFET & FRED * PFC "Boost" Configuration MAXIMUM RATINGS Symbol VDSS ID K G S All Ratings: TC = 25C unless otherwise specified. Parameter APT5010JVRU2 UNIT 500 Volts Drain-Source Voltage 44 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 450 Watts Linear Derating Factor 3.6 W/C VGSM PD TJ,TSTG 176 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 44 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) 500 Volts 44 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.100 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Ohms A 250 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) UNIT 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5558 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT5010JVRU2 Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 7410 Coss Output Capacitance VDS = 25V 1050 Reverse Transfer Capacitance f = 1 MHz 390 Crss Qg Total Gate Charge Qgs 3 VGS = 10V 312 VDD = 0.5 VDSS 37 ID = ID[Cont.] @ 25C 127 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 18 VDD = 0.5 VDSS 16 ID = ID[Cont.] @ 25C 54 RG = 0.6 5 Rise Time td(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN TYP MAX 44 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 176 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) 620 ns Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 14.7 C THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% TYP MAX UNIT 0.28 40 C/W 2500 Volts 13 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 25, Peak I = 44A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5558 Rev A 0.3 t1 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION lb*in APT5010JVRU2 VGS=7V, 8V, 10V & 15V 100 80 5.5V 60 40 VGS=15V 6V 5V 20 4.5V ID, DRAIN CURRENT (AMPERES) TJ = +25C 80 TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125C 20 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 5V 20 4.5V 1.5 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.4 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 40 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 5.5V 60 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) TJ = -55C VGS=7V, 8V & 10V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 100 6V 80 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5558 Rev A ID, DRAIN CURRENT (AMPERES) 100 APT5010JVRU2 200 OPERATION HERE LIMITED BY RDS (ON) 100S 50 5 10mS 1 100mS DC TC =+25C TJ =+150C SINGLE PULSE .5 .1 D VDS=100V 16 Coss Crss 1,000 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE I = I [Cont.] D 5,000 100 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 C, CAPACITANCE (pF) 1mS 10 VDS=250V 12 VDS=400V 8 4 0 Ciss 10,000 0 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 30,000 10S 200 100 50 TJ =+150C TJ =+25C 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE Diode Specifications Section MAXIMUM RATINGS (UltraFast Recovery Diode) Symbol VR All Ratings: TC = 25C unless otherwise specified. Characteristic / Test Conditions APT5010JVRU2 UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 80C, Duty Cycle = 0.5) 30 RMS Forward Current 60 IF(RMS) IFSM TJ,TSTG TL Amps 320 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3mS) -55 to 150 Operating and StorageTemperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP 050-5558 Rev A IRM CT Maximum Forward Voltage Maximum Reverse Leakage Current Junction Capacitance, VR = 200V IF = 60A UNIT 1.8 IF = 30A VF MAX 1.5 Volts IF = 30A, TJ = 150C 1.6 VR = VR Rated 250 VR = VR Rated, TJ = 125C 500 40 A pF APT5010JVRU2 DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX 65 trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/S, VR = 30V, TJ = 25C 50 trr2 Reverse Recovery Time TJ = 25C 50 trr3 IF = 30A, diF /dt = -240A/S, VR = 350V TJ = 100C 80 tfr1 Forward Recovery Time TJ = 25C 155 tfr2 IF = 30A, diF /dt = 240A/S, VR = 350V TJ = 100C 155 IRRM1 Reverse Recovery Current TJ = 25C 4 10 IRRM2 IF = 30A, diF /dt = -240A/S, VR = 350V TJ = 100C 7.5 15 Qrr1 Recovery Charge TJ = 25C 100 Qrr2 IF = 30A, diF /dt = -240A/S, VR = 350V TJ = 100C 300 Vfr1 Forward Recovery Voltage TJ = 25C 5 Vfr2 IF = 30A, diF /dt = 240A/S, VR = 350V TJ = 100C 5 Rate of Fall of Recovery Current TJ = 25C 400 IF = 30A, diF /dt = -240A/S, VR = 350V (See Figure 10) TJ = 100C 200 diM/dt UNIT nS Amps nC Volts A/S THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RJC Junction-to-Case Thermal Resistance RJA Junction-to-Ambient Thermal Resistance WT MIN TYP MAX UNIT 0.90 C/W 20 1.06 oz. 30 gm. Package Weight 2.0 D=0.5 0.5 0.2 0.1 0.1 0.05 0.05 0.02 Note: 0.01 PDM SINGLE PULSE t1 t2 Duty Factor D = t1/t2 0.01 Peak TJ = PDM x ZJC + TC 0.005 -5 10 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 050-5558 Rev A Z JC, THERMAL IMPEDANCE (C/W) 1.0 APT5010JVRU2 1600 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 80 60 TJ = 150C TJ = 100C 40 TJ = 25C TJ = -55C 20 0 0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 15, Forward Voltage Drop vs Forward Current 1200 60A 800 30A 400 15A 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 16, Reverse Recovery Charge vs Current Slew Rate 2.0 40 TJ = 100C VR = 350V 60A Kf, DYNAMIC PARAMETERS (NORMALIZED) IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 30 20 30A 15A 10 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 17, Reverse Recovery Current vs Current Slew Rate 1.6 Qrr trr 1.2 trr IRRM 0.8 Qrr 0.4 0.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18, Dynamic Parameters vs Junction Temperature 200 -50 2500 tfr, FORWARD RECOVERY TIME (nano-SECONDS) trr, REVERSE RECOVERY TIME (nano-SECONDS) 160 60A 120 30A 15A 80 40 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 19, Reverse Recovery Time vs Current Slew Rate 25 TJ = 100C VR = 350V IF = 30A TJ = 100C VR = 350V 2000 20 Vfr 1500 15 1000 10 500 5 tfr 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate 050-5558 Rev A CJ, JUNCTION CAPACITANCE (pico-FARADS) 800 500 100 50 30 0.01 0.05 0.1 Figure 21, Junction Capacitance vs Reverse Voltage Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) IF, FORWARD CURRENT (AMPERES) 100 0.5 1 5 VR, REVERSE VOLTAGE (VOLTS) 10 50 100 200 APT5010JVRU2 Vr D.U.T. trr/Qrr Waveform 30H PEARSON 411 CURRENT TRANSFORMER +15v diF /dt Adjust 0v -15v Figure 22, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF 1 4 6 Zero 5 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 23, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Cathode Drain 30.1 (1.185) 30.3 (1.193) Changed 2/10/99 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 050-5558 Rev A Gate Source