APT5010JVRU2 - Advanced Power Technology

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)

Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

050-5558 Rev A

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

VDSS

IDM

VGS

VGSM

TJ,TSTG

IAR

EAR

EAS

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BVDSS

ID(on)

RDS(on)

IDSS

IGSS

VGS(th)

UNIT

Volts

Amps

Ohms

µA

Volts

MIN TYP MAX

500

44 0.100

250

±100

APT5010JVRU2

500

176

±30

±40

450

3.6

-55 to 150

300

2500

APT5010JVRU2

500V 44A 0.100Ω

Power MOS V® is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

• Single Die MOSFET & FRED • PFC "Boost" Configuration

POWER MOS V®

SOT-227

ISOTOP

"UL Recognized"

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 55792 1515 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

Symbol

ISM

VSD

t rr

Q rr

DYNAMIC CHARACTERISTICS

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID[Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID[Cont.] @ 25°C

RG = 0.6Ω

MIN TYP MAX

7410

1050

390

312

127

UNIT

APT5010JVRU2

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

050-5558 Rev A

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])

Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)

Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

µC

MIN TYP MAX

176

1.3

620

14.7

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471

temperature. 4Starting Tj = +25°C, L = 2.58mH, RG = 25Ω, Peak IL = 44A

2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL/PACKAGE CHARACTERISTICS

Symbol

RθJC

RθJA

VIsolation

Torque

MIN TYP MAX

0.28

2500 13

UNIT

°C/W

Volts

lb•in

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

APT5010JVRU2

050-5558 Rev A

050100150200250 024681012

02468 020406080100120

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

ID = 0.5 ID [Cont.]

VGS = 10V

100

1.5

1.4

1.3

1.2

1.1

1.0

0.9

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100

2.5

2.0

1.5

1.0

0.5

0.0

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

5.5V

4.5V

VGS=7V, 8V, 10V & 15V 6V

5.5V

4.5V

VGS=15V

VGS=10V VGS=20V

TJ = +25°C

TJ = -55°C

TJ = +125°C

TJ = +25°CTJ = -55°C

VGS=7V, 8V & 10V

NORMALIZED TO

VGS = 10V @ 0.5 ID [Cont.]

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

APT5010JVRU2

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5)

RMS Forward Current

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)

Operating and StorageTemperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Symbol

VRRM

VRWM

IF(AV)

IF(RMS)

IFSM

TJ,TSTG

Symbol

IRM

Characteristic / Test Conditions

IF = 30A

Maximum Forward Voltage IF = 60A

IF = 30A, TJ = 150°C

Maximum Reverse Leakage Current VR = VR Rated

VR = VR Rated, TJ = 125°C

Junction Capacitance, VR = 200V

STATIC ELECTRICAL CHARACTERISTICS

UNIT

Volts

Amps

°C

UNIT

Volts

µA

MIN TYP MAX

1.8

1.5

1.6

250

500

APT5010JVRU2

600

320

-55 to 150

300

MAXIMUM RATINGS (UltraFast Recovery Diode) All Ratings: TC = 25°C unless otherwise specified.

050-5558 Rev A

Diode Specifications Section

TC =+25°C

TJ =+150°C

SINGLE PULSE

200

100

OPERATION HERE

LIMITED BY RDS (ON)

TJ =+150°C T

=+25°C

Crss

1 5 10 50 100 500 .01 .1 1 10 50

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Coss

Ciss

30,000

10,000

5,000

1,000

500

100

200

100

VDS=250V

VDS=100V

VDS=400V

ID = ID [Cont.]

10µS

1mS

10mS

100mS

100µS

ZθJC, THERMAL IMPEDANCE (°C/W)

2.0

1.0

0.5

0.1

0.05

0.01

0.005

MIN TYP MAX

50 65

155

410

7.5 15

100

300

400

200

UNIT

Amps

Volts

A/µS

Characteristic

Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µS, VR = 30V, TJ = 25°C

Reverse Recovery Time TJ = 25°C

IF = 30A, diF/dt = -240A/µS, VR = 350V TJ = 100°C

Forward Recovery Time TJ = 25°C

IF = 30A, diF/dt = 240A/µS, VR = 350V TJ = 100°C

Reverse Recovery Current TJ = 25°C

IF = 30A, diF/dt = -240A/µS, VR = 350V TJ = 100°C

Recovery Charge TJ = 25°C

IF = 30A, diF/dt = -240A/µS, VR = 350V TJ = 100°C

Forward Recovery Voltage TJ = 25°C

IF = 30A, diF/dt = 240A/µS, VR = 350V TJ = 100°C

Rate of Fall of Recovery Current TJ = 25°C

IF = 30A, diF/dt = -240A/µS, VR = 350V (See Figure 10) TJ = 100°C

DYNAMIC CHARACTERISTICS

Symbol

trr1

trr2

trr3

tfr1

tfr2

IRRM1

IRRM2

Qrr1

Qrr2

Vfr1

Vfr2

diM/dt

THERMAL AND MECHANICAL CHARACTERISTICS

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance

Package Weight

Symbol

RθJC

RθJA

MIN TYP MAX

0.90

1.06

UNIT

°C/W

oz.

gm.

APT5010JVRU2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

10-5 10-4 10-3 10-2 10-1 1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

050-5558 Rev A

0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

0 200 400 600 800 1000 0 200 400 600 800 1000

0.01 0.05 0.1 0.5 1 5 10 50 100 200

TJ=100°C

VR=350V

TJ=100°C

VR=350V

TJ=100°C

VR=350V

trr

Qrr

trr

IRRM

100

200

160

120

800

500

100

60A

30A

15A

30A 15A

60A

APT5010JVRU2

TJ = -55°C

TJ = 25°C

TJ = 100°C

TJ = 150°C

15A

30A

60A

TJ=100°C

VR=350V

IF=30A

1600

1200

800

400

2.0

1.6

1.2

0.8

0.4

0.0

2500

2000

1500

1000

500

Vfr

tfr

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

Figure 15, Forward Voltage Drop vs Forward Current Figure 16, Reverse Recovery Charge vs Current Slew Rate

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

Figure 17, Reverse Recovery Current vs Current Slew Rate Figure 18, Dynamic Parameters vs Junction Temperature

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

Figure 19, Reverse Recovery Time vs Current Slew Rate Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate

VR, REVERSE VOLTAGE (VOLTS)

Figure 21, Junction Capacitance vs Reverse Voltage

CJ, JUNCTION CAPACITANCE trr, REVERSE RECOVERY TIME IRRM, REVERSE RECOVERY CURRENT IF, FORWARD CURRENT

(pico-FARADS) (nano-SECONDS) (AMPERES) (AMPERES)

tfr, FORWARD RECOVERY TIME Kf, DYNAMIC PARAMETERS Qrr, REVERSE RECOVERY CHARGE

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

Vfr, FORWARD RECOVERY VOLTAGE

(VOLTS)

050-5558 Rev A

PEARSON 411

CURRENT

TRANSFORMER

0.5 IRRM

/dt Adjust

30µH

D.U.T.

+15v

-15v

0.75 IRRM

trr/Qrr

Waveform

Zero

/dt - Current Slew Rate, Rate of Forward

Current Change Through Zero Crossing.

- Forward Conduction Current

RRM

- Peak Reverse Recovery Current.

trr - Reverse Recovery Time Measured from Point of I

Qrr - Area Under the Curve Defined by I

RRM

and trr.

diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.

Current Falling Through Zero to a Tangent Line { diM/dt}

Extrapolated Through Zero Defined by 0.75 and 0.50 I

RRM

Figure 22, Diode Reverse Recovery Test Circuit and Waveforms

Figure 23, Diode Reverse Recovery Waveform and Definitions

Qrr = 1/2 (trr . I

RRM

)

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033) 12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

Cathode Drain

Gate

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Source

Changed 2/10/99

APT5010JVRU2

SOT-227 (ISOTOP®) Package Outline

050-5558 Rev A

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

ISOTOP® is a Registered Trademark of SGS Thomson.

"UL Recognized" File No. E145592