11
<TRANSISTOR ARRAY>
M54522FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
2012.May
PIN CONFIGURATION
DESCRIPTION
M54522FP is an eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
FEATURES
High breakdown voltage ( BVCEO > 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
APPLICATIONS
Drives of relays and printers, digit drives of indication elements
(LEDs and lamps), and interfaces between microcomputer
output and high-current or high-voltage systems
FUNCTION
The M54522FP each have eight circuits consisting of NPN
Darlington transistors. This ICs have resistance of 20kΩ
between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output
pin (collector) and COM pin. The output transistor emitters
are all connected to the GND pin (pin 10).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
Package type 20P2N-A
3
4
5
6
7
8
9
10
18
17
16
15
14
13
12
11
O2
O3
O4
O5
O6
O7
O8
IN2
IN3
IN4
IN5
IN6
IN7
IN8
GND COM COMMON
OUTPUT
INPUT
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT 20K
20K
2K
GND
The eight circuits share the COM and GND.
–55 +125Storage temperature Tstg
–20 +75Operating t emp e ratur e Topr W1.10Ta = 25, when mounted on board
Power dissipation
PdV40
Clamping diode reverse voltage
VR
mA400
Clamping diode forward current
IF
V–0.5 +40
Input voltage
VI
mA400Current per circuit output, L
Output current
IC
V–0.5 +40Output , H
Collector-emitter voltage
VCEO
Unit Ratings Conditions Parameter Symbol
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75)
219 O1
IN1
120
NC NC
NC : No connection
The diode, indicated with the dotted line, is parasitic, and
cannot be used. Unit :Ω
<TRANSISTOR ARRAY>
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54522FP
2
2012.May
NOTE 1 TEST CIRCUIT TIMING DIAGRAM
OUTPUT
INPUT 50%
50%
on
50%
50%
off
50Ω CL
RL
PG
INPUT
OUTPUT
Measured device
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO= 50Ω,VI N= 0 to 8V
(2) Input-output conditions : RL= 25Ω, VO= 10V
(3) Electrostatic capacity CLincludes floating capacitance at
connections and input capacitance at probes
VO
OPEN
IC <200mA
IC <400mA
Duty Cycle
no more than 5%
V0.5
0 “L” input voltage VIL
4V30
8
“H” input voltage VIH
200
0
Duty Cycle
no more than 20%
mA
400
0
Collector current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
IC
V40
0
Output voltageVO
maxtypmin Unit
Limits
ParameterSymbol
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75)
80001000VCE = 4V, IC= 300mA, Ta = 25DC amplification factorhFE
μA
100VR= 40V
Clamping diode reverse
current
IR
V
2.41.5IF= 400mA
Clamping diode forward
voltage
VF
mA
1.80.850.3VI= 17V
Input current
II
1.60.95
VI = 4V, IC= 200mA V
2.41.15
VI= 8V, IC= 400mA
Collector-emitter saturation
voltage
VCE(sat)
V
40ICEO = 100μA
Collector-emitter
breakdown voltage
V (BR)CEO
maxtypmin Unit
Limits
Test conditionsParameterSymbol
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 20~+75℃)
*The typical values are those measured under ambient temperature (Ta) of 25.
There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃)
ns
930
Turn-off time
toff
ns
30
CL= 15pFnote 1
Turn-on time
ton maxtypmin Unit
Limits
Test conditionsParameterSymbol
<TRANSISTOR ARRAY>
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54522FP
3
2012.May
•The collector current values
represent the current per circuit.
•Repeated frequency 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta()
Power dissipation Pd(W)
0 25 50 75 100
0
0.5
1.0
1.5
Output Satura ti on Volt ag e
Collector Current Characteristics
Collector saturation voltage VCE(sat)(V)
Collector current IC(mA)
0 0.5 1.0 1.5 2.0
0
Duty-Cycle- Colle ctor cur rent Charact eristic s
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
40
400
Duty-Cycle- Colle ctor cur rent Charact eristic s
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
40
400
DC Amplification Factor
Collector Current Characteristics
Collector current IC(mA)
DC amplification factor hFE
10 3
10 2
7
5
3
2
10 3
10 1
7
5
32
10 0
Ta=25℃
Ta=-20℃
Ta=75℃
VI=4V
100
200
300
400
10 4
7
5
3
2
5
3
2
VCE=4V
75
3
27
5
3
2
Ta=25℃
Ta=-20℃
Ta=75℃
10 2
Collector current IC(mA)
Grounded Emitter Transfer Characteristics
Input voltage VI(V)
01234
0
VCE=4V
100
200
300
Ta=25℃
Ta=-20℃
Ta=75℃
•The collector current values
represent the current per circuit .
•Repeated frequency 10Hz
•The value in the c i rcle represents the
value of the simultaneously-operated c i rcuit.
•Ta = 75
2.0
500 500
500
7
400
5
10
<TRANSISTOR ARRAY>
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54522FP
4
2012.May
Clamping Diode Charac teristic s
Forward bias voltage VF(V)
Forward bias current IF(mA)
0 0.5 1.0 1.5 2.0
0
100
200
300
Input Chara cteristics
Input voltage VI(V)
Input current II(mA)
0 5 10 20 25
0
0.5
1.5
Ta=25℃
Ta=75℃
15
1.0
Ta=25℃
Ta=-20℃
Ta=75℃
Ta=-20℃
4002.0
<TRANSISTOR ARRAY>
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54522FP
5
2012.May
PACKAGE OUTLINE
<TRANSISTOR ARRAY>
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SINK TYPE
M54522FP
6
2012.May
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