MiniMELF (SOD-80C) Features
• Silicon Epitaxial Planar Diode
• Fast switching diode in MiniMELF case especially
suited for automatic inser tion.
• This diode is also available in other case styles
including the DO-35 case with the type designation
1N4151 and the SOD-123 case with the type
designation 1N4151W.
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Re v erse Voltage VR50 V
Peak Reverse Voltage VRM 75 V
Forward DC Current at Tamb = 25°C(1) IF200 mA
Average Rectified Current IF(AV) 150 mA
(Half Wave Rectification with Resist. Load at Tamb = 25°C f ≥50Hz)(1)
Surge Forward Current at t < 1s and Tj = 25°CI
FSM 500 mA
Power Dissipation at Tamb = 25°C(1) Ptot 500 mW
Thermal Resistance Junction to Ambient Air(1) RθJA 350 °C/W
Junction Temperature Tj175 °C
Storage Temperature TS–65 to +175 °C
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
F orward Voltage VFIF = mA —— 1V
Leakage Current IRVR = 50V ——50 nA
VR = 50V, TJ= 150°C ——50 µA
Capacitance Ctot VF= VR= 0 —— 2pF
IF= 10mA, IR = 10mA —— 4ns
Reverse Recover y Time trr Irr = 1mA, RL= 100Ω
IF= 10mA, IR = 1mA —— 2ns
VR = 6V, RL= 100Ω
Rectification Efficiency (See third page) ηνf = 100MHz, VRF = 2V 0.45 ———
Note: (1) Valid provided that electrodes are kept at ambient temperature
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Black
Packaging Codes/Options:
F4/10K per 13”reel (8mm tape), 50K/box