SAMSUNG SEMICONDUCTOR INC -LY4E D B racunye2 o00?77S50 1 i PNP EPITAXIAL TIP145F/146F/147F SILICON DARLINGTON TRANSISTOR - 33-31 HIGH DC CURRENT GAIN TO-3P(F) MIN. hee =1000 @ Vce=4V, Ilc=5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symbol Rating Unit s Collector-Base Voltage Veao . : TIP145F -60 | Vv > TIP146F -80 Vv : TIP147F -106 yw V Collector Emitter Voltage Veo 1. Base 2. Collector 3. Emitter : TIP145F -60 Vv : TIPT46F -80 v Cc : TIP147F 100 Vv Emitter-Base Voltage Veso P -5 Vv Collector Current (DC) le ~10 A Collector Current (Pulse) Io 15 A Bor Base Current (DC) la -0.5 A . pk Collector Dissipation . - Poe r 60 Ww . Junction Temperature TO. 150 C Storage Temperature ~ Tstg 65~150 S Ri=8K 2 Re=1200 Wr AY R Re 4 ELECTRICAL CHARACTERISTICS (T,=25C) E Characteristic - "| Symbol Test Condition Min Typ Max Unit Collecter Emitter Sustaining Voltage | Vceo(sus) : TIP145F Ic=30mA, fg=0 -60 v + TIP146F -80 v - + TIP147F -100 Vv Collector Cutoff Current: TIP145F | Ieco Vee ~30V, Ip=O : : -2 mA : TIP146F Vce=40V, lg=0 -2 mA : TIP147F Vce=~50V, Ig=0 2 mA Collector Cutoff Current : TIP145F | Icao Vea 60V, Ie=0 1 mA > TIP146F Vee=80V, IE=0 -1 mA > TIP147F Ves=- 100V, fe=O0 -1 mA Emitter Cutoff Current . leao Vee=~5V, le 2 mA DC Current Gain Bre Vee=-4V, Ilc=5A 1000 Voe=4V, le=-10A = 00 Collector Emitter Saturation Voltage { Vce(sat) lc=5A, la= 10mA -2 v -Ig==10A, iga=40mA -3 Vv Base Emitter Saturation Voltage Vee(sat) | Ic=10A, la=40mA . 3.5 Vv Base Emitter On Voltage | Vee(on} = | Vce=4V, Ic=-10A -3 Vv Delay Time ty Veo=30V, Io ~5A 0.15 pS Rise Time t | ta=20mA, lat =152 0.55 uS Storage Time ts 2.5 us Fall Time t 2.6 pS cs SAMSUNG SEMICONDUCTOR 325 SAMSUNG SEMICONOUCTOR INC LYE TIP145F/146F/147F - % STATIC CHARACTERISTIC o Wr9u4.42 0007751 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR 7. 33-3) DC CURRENT GAIN 100000 60000 5 20000, = Z 10000 z 8 3 me E soco e 3 g & 4 B 2000 8 a g 1000 A $ i 500 200 a... 100 -1 -2 -3 4 5 -0.1-0.2 -05 -1 -2 -5 -10 -20 50-100 Ves(}, COLLECTOR-EMITTER. VOLTAGE le{A), COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE BASE-EMITTER SATURATION VOLTAGE : 10 10000 1=01 MHz g 5 5000 exo x g 2 2000 5 1 8 1000 < = F 05 5 s00 3 : = o2 oO 200 i j By 01 100 2 ~ Joos 50 3 0.02 20 0.01 {o : on O2 Os t 2 5 410 20 50 100 1 -2 -& -10 ~20 ~80 -100 -200 -500 -1000 IefA), COLLECTOR CURRENT Vea(}, COLLECTOR-BASE VOLTAGE SAFE OPERATING AREA POWER DERATING 70 bE 60 3 Z 50 3 5 & 40 a & 3 st Z x @ 20 TP 147, ~20 -60 -100 Vee{V), COLLECTOR-EMITTER VOLTAGE 1-2-5 10 =200 -500 -1000 3 26 50 73 100 125 150 Tc(*C), CASE TEMPERATURE 175 200 ck SAMSUNG SEMICONDUCTOR 326 SAMSUNG SEMICONDUCTOR INC L4E 0 ff 2tb4b42 CoOr7Sse 5 Of P EPITAXIAL SILICON TIP1451/1461/147T DARLINGTON TRANSISTOR - -3| _HIGH DC CURRENT GAIN-MIN hFE=1000 , : T 33 @.Vce=4V, Ic=-5A To-220 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE Complementary to TIP140TH41THN42T ABSOLUTE MAXIMUM. RATINGS (T.=25C) Characteristic Symboi {| Rating Unit Colector-Base Voltage : TIP145T) Vso - 60 - Vv ! TIP1467 . - -80 Vv : TIP147T . -100 v Coilector-Emitter Voltage Veeco : TIP1457 -60 v 7 TIP146T7 B0 wh Vv : TIP1477j -100 Vv Colagtor Current (oe) : aan te y 1, Base 2. Collector 3. Emitter Collector Current (Pulse) le -15 A Base Current (DC) ts -05 A c Collector Dissipation Pe 80 | WwW Junction Temperature Tj 150 C ' Storage Temperature i Tstg -65~150 C Bo ELECTRICAL CHARACTERISTICS (T,=25C) Ry e8kea Pe1200 Ww aA Rr Rm | _ Characteristic | Symbol Test Condition Min Typ Max Unit Collector Emitter Sustaining Voltage | Vceo(sus) , + TIP145T - | lk=-30mA, Ip=0 -60 Vv > TIP146T - -80 Vv / > TIP147T 100 Vv Collector Cutoff-Current : TIP145T | Iceo Vee=~-30V, Ilp=0 -2 mA : TIP146T Vce= 40V, Ip=0 -2 mA 2 TIP147T Vce= 50V, lp=0 ~2 mA Collector Cutoff Current : TIP145T | les Vea 6OV, le=O -1 mA : TIP146T ' Vea=B8OV, le=0 _1 mA - : TIPt47T Vea=~ 100V, k=0 - . -41 mA Emitter Cutoff Current . leno Vee=5V,le=O } -2 mA DC Current Gain bre - Nce=-4V, le=-5A 1000 . Voe=4V, Ilc=-10A 600 Coflector Emitter Saturation Voltage | Vce(sat) lc=5A, la=10mA -2 Vv . Ic 10A, la=40mA : . -3 v Base Emitter Saturation Voltage Vae(sat) lk=-10A, lb=40mA _ | 73.6 v Base Emitter On Voltag Vee(on) Vce=4V, lo=+10A -3 Vv Delay Time : td Voc=S0V, lb=-5A 0.156 us Rise Time tr ls=~-20mA, t1 =1b2 . 0.556 ps Storage Time ts . : 2.6 us Fall Time tt . 2.6 - us eke SAMSUNG SEMICONDUCTOR 327 SAMSUNG SEMICONDUCTOR INC. TIP1407/1411/142T % STATIC CHARACTERISTIC -9 8 -7 Ss -4 -3 lef), COLLECTOR CURRENT -2 1 -2 -3 -4 -5 Vee(), COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE Vee(nat) {V}, SATURATION VOLTAGE Vae(sat), t e 8 8 ~0.01 01-6.2 -05 -t -2 -5 -10 -20 -80 -100 Ie(A), COLLECTOR CURRENT POWEA DERATING Po(W), POWER DISSIPATION Os 25 50 75 100 125 $50 (175200 Te{*C}, CASE TEMPERATURE LYE D B taeuise 00077543 2 NPh criimaiaL SILICON DARLINGTON TRANSISTOR 33-3) DC CURRENT GAIN Zz g 10000 a & sooo w g oO 2000 QO g. | 1000 2 500 200 100 Ot -02 -05 -1 -2 -5 -10 -20 ~s0 -100 tw I{A), COLLECTOR CURRENT . COLLECTOR OUTPUT CAPACITANCE 10000 20) MHz Jer wu 9 = E 3 50 @ a < o 20 9 5 2 1 71-2 - -10 -20 ~S0 -100 -200 800 - 1000 Yea{V}, COLLECTOR-HASE VOLTAGE SAFE OPERATING AREA 5 z ~10 9 -s 2 4 3 -2 9 g-1 E 5 I 9 an 0.4 -t -2 ~ -10 -20 ~-50 -100 ~200 ~500 -1000 Vce(}, COLLECTOR-EMITTER VOLTAGE cee SAMSUNG SEMICONDUCTOR 328