WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGP50B60PD1
AUIRGP50B60PD1E
11/02/10
Features
•Low VCE(ON) NPT Technology, Positive Temperature
Coefficient
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Lead-Free, RoHS Compliant
•Automotive Qualified *
Benefits
•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
Applications
•Automotive HEV and EV
•PFC and ZVS SMPS Circuits
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Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
AUTOMOTIVE GRADE
GC E
Gate Collector Emitter
TO-247AC
AUIRGP50B60PD1
GC
E
GC
E
TO-247AD
AUIRGP50B60PD1E
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 75
h
I
C
@ T
C
= 100°C Continuous Collector Current 45
I
CM
Pulse Collector Current (Ref. Fig. C.T.4) 150
I
LM
Clamped Inductive Load Current
d
150 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 40
I
F
@ T
C
= 100°C Diode Continous Forward Current 15
I
FRM
Maximum Repetitive Forward Current
e
60
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 390 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 156
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W
R
θJC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
PD - 96306A
*Qualification standards can be found at http://www.irf.com/
AUIRGP50B60PD1/AUIRGP50B60PD1E
2www.irf.com
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the
same energy as Coes while VCE is rising from 0 to 80% VCES.
Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600——V
V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—0.31—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-125°C)
R
G
Internal Gate Resistance — 1.7 — Ω1MHz, Open Collector
—2.002.35 I
C
= 33A, V
GE
= 15V
4, 5,6,8,9
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.45 2.85 V I
C
= 50A, V
GE
= 15V
—2.602.95 I
C
= 33A, V
GE
= 15V, T
J
= 125°C
—3.203.60 I
C
= 50A, V
GE
= 15V, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage 3.0 4.0 5.0 V I
C
= 250µA
7,8,9
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -10 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA
gfe Forward Transconductance — 41 — S V
CE
= 50V, I
C
= 33A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 5.0 500 µA V
GE
= 0V, V
CE
= 600V
—1.0—mA
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
V
FM
Diode Forward Voltage Drop — 1.30 1.70 V I
F
= 15A, V
GE
= 0V
10
—1.201.60 I
F
= 15A, V
GE
= 0V, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V, V
CE
= 0V
Static or Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 205 308 I
C
= 33A
17
Q
gc
Gate-to-Collector Charge (turn-on) — 70 105 nC V
CC
= 400V
CT1
Q
ge
Gate-to-Emitter Charge (turn-on) — 30 45 V
GE
= 15V
E
on
Turn-On Switching Loss — 255 305 I
C
= 33A, V
CC
= 390V
CT3
E
off
Turn-Off Switching Loss — 375 445 µJ V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
E
total
Total Switching Loss — 630 750 TJ = 25°C
f
t
d(on)
Turn-On delay time — 30 40 I
C
= 33A, V
CC
= 390V
CT3
t
r
Rise time — 10 15 ns V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
t
d(off)
Turn-Off delay time — 130 150 T
J
= 25°C
f
t
f
Fall time — 11 15
E
on
Turn-On Switching Loss — 580 700 I
C
= 33A, V
CC
= 390V
CT3
E
off
Turn-Off Switching Loss — 480 550 µJ V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
11,13
E
total
Total Switching Loss — 1060 1250 T
J
= 125°C
f
WF1,WF2
t
d(on)
Turn-On delay time — 26 35 I
C
= 33A, V
CC
= 390V
CT3
t
r
Rise time — 13 20 ns V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
12,14
t
d(off)
Turn-Off delay time — 146 165 T
J
= 125°C
f
WF1,WF2
t
f
Fall time — 15 20
C
ies
Input Capacitance — 3648 — V
GE
= 0V
16
C
oes
Output Capacitance — 322 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 56 — pF f = 1Mhz
C
oes
eff. Effective Output Capacitance (Time Related)
g
—215— V
GE
= 0V, V
CE
= 0V to 480V
15
C
oes
eff. (ER) Effective Output Capacitance (Ener
gy
Related)
g
—163—
T
J
= 150°C, I
C
= 150A
3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
CT2
Rg = 22Ω, V
GE
= +15V to 0V
t
rr
Diode Reverse Recovery Time — 42 60 ns T
J
= 25°C I
F
= 15A, V
R
= 200V,
19
—74120 T
J
= 125°C di/dt = 200A/µs
Q
rr
Diode Reverse Recovery Charge — 80 180 nC T
J
= 25°C I
F
= 15A, V
R
= 200V,
21
— 220 600 T
J
= 125°C di/dt = 200A/µs
I
rr
Peak Reverse Recovery Current — 4.0 6.0 A T
J
= 25°C I
F
= 15A, V
R
= 200V,
19,20,21,22
—6.510 T
J
= 125°C di/dt = 200A/µs
CT5
Conditions
AUIRGP50B60PD1/AUIRGP50B60PD1E
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
TO-247AC
TO-247AD
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/-450V)
AEC-Q101-002
Human Body Model Class H2 (+/-4500V)
AEC-Q101-001
Charged Device Model Class C5 (+/-1100V)
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level N/A
AUIRGP50B60PD1/AUIRGP50B60PD1E
4www.irf.com
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
400
450
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC A)
012345678910
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
012345678910
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
012345678910
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
020 40 60 80 100 120 140 160
TC (°C)
0
10
20
30
40
50
60
70
80
90
IC (A)
AUIRGP50B60PD1/AUIRGP50B60PD1E
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Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 15A
ICE = 33A
ICE = 50A
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 15A
ICE = 33A
ICE = 50A
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
Energy (µJ)
EOFF
EON
010 20 30 40 50 60
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 5 10 15 20
VGE (V)
0
100
200
300
400
500
600
700
800
900
ICE (A)
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
I nstant aneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
AUIRGP50B60PD1/AUIRGP50B60PD1E
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Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
0 5 10 15 20 25
RG (Ω)
300
400
500
600
700
800
900
1000
Energy (µJ)
EON
EOFF
0 5 10 15 20 25
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 50 100 150 200 250
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
400V
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 100 200 300 400 500 600 700
VCE (V)
0
10
20
30
40
Eoes (µJ)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
-50 0 50 100 150 200
TJ (°C)
0.8
1.0
1.2
1.4
Normalized VCE(on) (V)
AUIRGP50B60PD1/AUIRGP50B60PD1E
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Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
20
40
60
80
100
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
AUIRGP50B60PD1/AUIRGP50B60PD1E
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Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.363 0.000112
0.864 0.001184
0.473 0.032264
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.157 0.000346
0.163 4.28
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
AUIRGP50B60PD1/AUIRGP50B60PD1E
www.irf.com 9
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
L
Rg
80 V DUT
480V
1K
VCC
DUT
0
L
Fig.C.T.4 - Resistive Load Circuit
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.3 - Switching Loss Circuit
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
PFC diode L
Rg
VCC
DUT /
DRIVER
AUIRGP50B60PD1/AUIRGP50B60PD1E
10 www.irf.com
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF3 - Reverse Recovery Waveform and
Definitions
-100
-50
0
50
100
150
200
250
300
350
400
450
500
550
600
-0.20 0.00 0.20 0.40
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
I
CE
(A)
90% I
CE
5% I
CE
5% V
CE
Eoff
tf
-50
0
50
100
150
200
250
300
350
400
450
-0.10 0.00 0.10 0.20
Time(µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
90% I
CE
5% V
CE
10% I
CE
Eon Loss
tr
TEST CURRENT
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
AUIRGP50B60PD1/AUIRGP50B60PD1E
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TO-247AC Package Outline
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Dimensions are shown in milimeters (inches)
Lot Code
P50B60PD1
YWWA
XX or XX
Part Number
IR Logo
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRGP50B60PD1/AUIRGP50B60PD1E
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TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
50B60PD1E
YWWA
XX or XX
Part Number
IR Logo
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRGP50B60PD1/AUIRGP50B60PD1E
www.irf.com 13
Ordering Information
Base
p
art number Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRGP50B60PD1 TO-247AC Tube 25 AUIRGP50B60PD1
AUIRGP50B60PD1E TO-247AD Tube 25 AUIRGP50B60PD1E
AUIRGP50B60PD1/AUIRGP50B60PD1E
14 www.irf.com
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corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
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Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
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costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically
designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers
acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that
they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated
by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree
that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
