2SB1401
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
55 kΩ
(Typ)
1
2
3
123
TO-220FM
1. Base
2. Collector
3. Emitter
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Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO –300 V
Collector to emitter voltage VCEO –300 V
Emitter to base voltage VEBO –7 V
Collector current IC–0.3 A
Collector peak current IC(peak) –0.6 A
Collector power dissipation PC2W
P
C
*
115
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO –300 — — V IC = –1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO –300 — — V IC = –10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO –7 — — V IE = –1 mA, IC = 0
Collector cutoff current ICBO — — –10 µAV
CB = –300 V, IE = 0
ICEO — — –10 VCE = –60 V, RBE = ∞
IEBO — — –10 VEB = –5 V, IC = 0
DC current transfer ratio hFE1 1000 — — VCE = –1.5 V, IC = –20 mA*1
hFE2 1500 — — VCE = –1.5 V, IC = –100 mA*1
Collector to emitter saturation
voltage VCE(sat) — — –1.5 V IC = –100 mA, IB = –0.2 mA*1
Base to emitter saturation
voltage VBE(sat) — — –2.0 V IC = –100 mA, IB = –0.2 mA*1
Note: 1. Pulse test.
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Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
TC = 25°C
IB = 0
–20 µA
–40
–60
–80
–200
–100
–140
–500
–400
–300
–200
–100
0–1
Collector current IC (mA)
–2
Collector to emitter voltage VCE (V)
–3 –5
–4
Typical Output Characteristics
10000
5000
2000
1000
500
100
200
50
–1 –10
–100
–2 –20
DC current transfer ratio hFE
–5 –50
–1000–200 –500
Collector current IC (mA)
25°C
–25°C
VCE = –1.5 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Tc = 75°C
Saturation Voltage vs.
Collector Current
TC = 25°C
–10
–5
–0.5
–1.0
–2
–0.2
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter sauration voltage VBE(sat) (V)
–0.1
–10 –100–5
Collector current IC (mA)
–200 –1000–500–50–20
VBE(sat)
VCE(sat) IC/IB = 200
500
200
10
3
1.0
0.3
0.1
1m 10m 100m 1.0 10 100 1000
TC= 25°C
Thermal resistance θj-c(°C/W)
Transient Thermal Resistance
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Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
2SB1401
5
Hitachi, Ltd.
Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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