2SB1201 / 2SD1801
No.2112-2/10
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Collector Dissipation PC0.8 W
Tc=25°C15W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE1V
CE=(--)2V, IC=(--)100mA 100* 560*
hFE2V
CE=(--)2V, IC=(--)1.5A 40
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)50mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA
(--0.3)0.15 (--0.7)0.4
V
Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)1A, IC=(--)50mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-On Time ton See specifi ed Test Circuit.
60
ns
Storage Time tstg
(450)550
ns
Fall Time tf30 ns
* : The 2SB1201/2SD1801 are classifi ed by 100mA hFE as follows :
Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SB1201S-E TP 500pcs./bag
Pb Free
2SB1201T-E TP 500pcs./bag
2SD1801S-E TP 500pcs./bag
2SD1801T-E TP 500pcs./bag
2SB1201S-TL-E TP-FA 700pcs./reel
2SB1201T-TL-E TP-FA 700pcs./reel
2SD1801S-TL-E TP-FA 700pcs./reel
2SD1801T-TL-E TP-FA 700pcs./reel
VRRB
VCC=25VVBE= --5V
++
50Ω
INPUT RL
25Ω
OUTPUT
100μF 470μF
PW=20μsIB1
D.C.b1% IB2
IC=10IB1= --10IB2=500mA, VCC=25V
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.