1
®
FN4874.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HS-201HSRH
Radiation Hardened High Speed, Quad
SPST, CMOS Analog Switch
The HS-201HSRH is a monolithic CMOS analog switch
featuring power-off high input impedance, very fast switching
speeds and low ON resistance. Fabrication on our DI RSG
process assures SEL immunity and only very slight
sensitivity to low dose rate (ELDRS). These Class V/Q
devices are tested and guaranteed for 300krad (Si) total
dose performance.
Power-off high input impedance enables the use of this
device in redundant circuits without causing data bus signal
degradation. ESD protection, overvoltage protection, fast
switching times, low ON resistance, and guaranteed
radiation hardness, make the HS-201HSRH ideal for any
space application where improved switching performance is
required.
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center (DSCC). The SMD numbers
listed here must be used when ordering flight units.
Detailed electrical specifications for this device are
contained in SMD 5962-99618. A ”hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
HS1-201HSRH, SBDIP (CDIP2-T16)
HS9-201HSRH, FLATPACK (CDFP4-F16)
TOP VIEW
Features
Electrically Screened to DSCC SMD 5962-99618
QML Qualified per MIL-PRF-38535
Radiation Performance
- Guaranteed Total Dose Performance . . . . . 300krad (Si)
- SEL Immune. . . . . . . . . . . . . . . . . . . . .DI RSG Process
Overvoltage Protection (Power On, Switch Off) . . . . . . ±30V
Power Off High Impedance . . . . . . . . . . . . . . . . . . . ±17V
Fast Switching Times
-t
ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (Max)
-t
OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (Max)
Low “ON” Resistance . . . . . . . . . . . . . . . . . . . 50 (Max)
Pin Compatible with Industry Standard 201 Types
Operating Supply Range . . . . . . . . . . . . . . . . . ±10V to ±15V
Wide Analog Voltage Range (±15V Supplies) . . . . . . . ±15V
TTL Compatible
Applications
High Speed Multiplexing
Sample and Hold Circuits
Digital Filters
Operational Amplifier Gain Switching Networks
Integrator Reset Circuits
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
A1
OUT1
IN1
V-
GND
IN4
A4
OUT4
A2
IN2
V+
NC
IN3
OUT3
A3
OUT2
Data Sheet March 24, 2006
2FN4874.1
March 24, 2006
Die Characteristics
DIE DIMENSIONS
2790µm x 4950µm (110 mils x 195 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kÅ +/-1.0kÅ
Metallization
Type: Ti/AlCu
Thickness: 16.0kÅ +/- 2kÅ
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 105 A/cm2
Transistor Count
328
Metallization Mask Layout
HS-201HSRH
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER PART MARKING
TEMP. RANGE
(°C) PACKAGE PKG. DWG. #
5962F9961801VEC HS1-201HSRH-Q Q 5962F9961801VEC -55 to 125 16 Ld SBDIP D16.3
5962F9961801QEC HS1-201HSRH-8 Q 5962F9961801QEC -55 to 125 16 Ld SBDIP D16.3
5962F9961801VXC HS9-201HSRH-Q Q 5962F9961801VXC -55 to 125 16 Ld Flatpack K16.A
5962F9961801QXC HS9-201HSRH-8 Q 5962F9961801QXC -55 to 125 16 Ld Flatpack K16.A
5962F9961801V9A HS0-201HSRH-Q - -55 to 125 - -
HS1-201HSRH/PROTO HS1-201HSRH/PROTO HS1-201HSRH/PROTO -55 to 125 16 Ld SBDIP D16.3
HS9-201HSRH/PROTO HS9-201HSRH/PROTO HS9-201HSRH/PROTO -55 to 125 16 Ld Flatpack K16.A
OUT4 IN4 GND V- IN1
A4
A3
A1
A2
OUT3 IN3 V+ IN2 OUT2
OUT1
HS-201HSRH
3FN4874.1
March 24, 2006
HS-201HSRH
Ceramic Metal Seal Flatpack Packages (Flatpack)
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark. Alternately, a tab (dimension k)
may be used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the lim-
its of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass
overrun.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness. The maximum lim-
its of lead dimensions b and c or M shall be measured at the cen-
troid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric mate-
rials shall be molded to the bottom of the package to cover the
leads.
8. Dimension Q shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension Q minimum
shall be reduced by 0.0015 inch (0.038mm) maximum when sol-
der dip lead finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH
-D-
-C-
0.004 H A - B
MD
S S
-A- -B-
0.036 H A - B
MD
S S
e
E
A
Q
L
D
A
E1
SEATING AND
LE2
E3 E3
BASE PLANE
-H-
b
C
S1
M
c1
b1
(c)
(b)
SECTION A-A
BASE
LEAD FINISH
METAL
PIN NO. 1
ID AREA
A
M
K16.A MIL-STD-1835 CDFP4-F16 (F-5A, CONFIGURATION B)
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A0.045 0.115 1.14 2.92 -
b0.015 0.022 0.38 0.56 -
b1 0.015 0.019 0.38 0.48 -
c0.004 0.009 0.10 0.23 -
c1 0.004 0.006 0.10 0.15 -
D-0.440 -11.18 3
E0.245 0.285 6.22 7.24 -
E1 - 0.315 -8.00 3
E2 0.130 -3.30 --
E3 0.030 -0.76 -7
e 0.050 BSC 1.27 BSC -
k0.008 0.015 0.20 0.38 2
L0.250 0.370 6.35 9.40 -
Q0.026 0.045 0.66 1.14 8
S1 0.005 -0.13 -6
M-0.0015 -0.04 -
N16 16-
Rev. 1 2-20-95
4
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4874.1
March 24, 2006
HS-201HSRH
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. Dimension Q shall be measured from the seating plane to the
base plane.
6. Measure dimension S1 at all four corners.
7. Measure dimension S2 from the top of the ceramic body to the
nearest metallization or lead.
8. N is the maximum number of terminal positions.
9. Braze fillets shall be concave.
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
11. Controlling dimension: INCH.
bbb C A - B
S
c
Q
L
A
SEATING
BASE
D
PLANE
PLANE
SS
-D-
-A-
-C-
eA
-B-
aaa CA - BM DS S
ccc CA - BMDS S
D
E
S1
b2
b
A
e
M
c1
b1
(c)
(b)
SECTION A-A
BASE
LEAD FINISH
METAL
eA/2
S2
M
A
D16.3 MIL-STD-1835 CDIP2-T16 (D-2, CONFIGURATION C)
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A-0.200 -5.08 -
b0.014 0.026 0.36 0.66 2
b1 0.014 0.023 0.36 0.58 3
b2 0.045 0.065 1.14 1.65 -
b3 0.023 0.045 0.58 1.14 4
c0.008 0.018 0.20 0.46 2
c1 0.008 0.015 0.20 0.38 3
D-0.840 -21.34 -
E0.220 0.310 5.59 7.87 -
e 0.100 BSC 2.54 BSC -
eA 0.300 BSC 7.62 BSC -
eA/2 0.150 BSC 3.81 BSC -
L0.125 0.200 3.18 5.08 -
Q0.015 0.060 0.38 1.52 5
S1 0.005 -0.13 -6
S2 0.005 -0.13 -7
α90o105o90o105o-
aaa - 0.015 -0.38 -
bbb - 0.030 -0.76 -
ccc - 0.010 -0.25 -
M-0.0015 -0.038 2
N16 168
Rev. 0 4/94