Advance Technical Information HiPerFASTTM IGBT IXSH24N60 IXSH24N60A Short Circuit SOA Capability VCES IC90 VCE(sat) 600V 600V 24A 24A 2.2V 2.7V TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient 20 30 V V IC25 IC90 ICM TC = 25C TC = 90C TC = 25C, 1ms 48 24 96 A A A SSOA VGE = 15V, TJ = 125C, RG = 10 ICM = 48 A (RBSOA) Clamped inductive load @0.8 * VCES V tSC (SCSOA) VGE = 15V, VCE = 360V, TJ = 125C RG = 82, non repetitive 10 s PC TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 1.13 / 10 Nm/lb.in. 300 260 C C 6 g TJ TJM Tstg Md TL TSOLD Mounting torque Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight G z z z z z IC = 250A, VCE = VGE 600 VGE(th) IC = 1.5mA, VCE = VGE 4.0 I sCES VCE = 0.8 * VCES IGES VCE = 0V, VGE = 20V VCE(sat) IC VGE = 0V TJ = 125C = 24A, VGE = 15V, Note 1 (c) 2008 IXYS CORPORATION, All rights reserved IXSH24N60 IXSH24N60A International standard package JEDEC TO-247AD High frequency IGBT with guaranteed Short Circuit SOA Capability 2nd generation HDMOSTM process Low VCE(SAT) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Applications z z z BVCES C = Collector TAB = Collector Features z Characteristic Values Min. Typ. Max. TAB E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25C, unless otherwise specified) C z AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding V 7.0 V 200 A 1 mA 100 nA 2.2 2.7 V V Advantages z z z Easy to mount with 1 screw (isolated mounting screw hole) Switching speed for high frequency applications High power density DS92809I(07/08) IXSH24N60 IXSH24N60A Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs IC = 24A, VCE = 10V, Note 1 IC(ON) VGE = 15V, VCE = 10V Cies Coes Cres Characteristic Values Min. Typ. Max. 9 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 24A, VGE = 15V, VCE = 0.5 * VCES Qgc td(on) tri td(off) tfi Inductive load, TJ = 25C IC = 24A, VGE = 15V VCE = 480V, RG = 10 Eoff td(on) tri Eon td(off) Inductive load, TJ = 125C IC = 24A, VGE = 15V VCE = 480V, RG = 10 tfi Eoff IXSH24N60 IXSH24N60A IXSH24N60A IXSH24N60 IXSH24N60A IXSH24N60 IXSH24N60A RthJC RthCK TO-247 (IXSH) Outline 23 S 65 A 1800 160 45 pF pF pF 75 90 nC 20 30 nC 35 50 nC 100 200 ns ns 450 500 275 2.0 ns ns ns mJ 100 200 1.2 475 ns ns mJ ns 600 450 4.0 3.0 ns ns mJ mJ 0.21 0.83 C/W C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Notes: 1. Pulse test, t 300s; duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2