MMBT3906
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88225
210-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
–VCE = 1V, –IC= 0.1mA 60 ——
–VCE = 1V, –IC= 1mA 80 ——
DC Current Gain hFE –VCE = 1V, –IC= 10mA 100 —300 —
–VCE = 1V, –IC= 50mA 60 ——
–VCE = 1V, –IC= 100mA 30 ——
Collector-Base Breakdown Voltage
–V(BR)CBO
–IC = 10µA, IE = 0 40 ——V
Collector-Emitter Breakdown Voltage
–V(BR)CEO
–IC = 1mA, IB = 0 40 ——V
Emitter-Base Breakdown Voltage
–V(BR)EBO
–IE = 10µA, IC = 0 5 ——V
Collector Saturation Voltage –VCEsat –IC= 10mA, –IB= 1mA ——0.25 V
–IC= 50mA, –IB= 5mA ——0.4
Base Saturation Voltage –VBEsat –IC= 10mA, –IB= 1mA ——0.85 V
–IC= 50mA, –IB= 5mA ——0.95
Collector-Emitter Cut-off Current –ICEV –VEB = 3V, –VCE = 30V ——50 nA
Emitter-Base Cut-off Current –IEBV –VEB = 3V, VCE = 30V ——50 nA
Gain-Bandwidth Product fT–VCE = 20V, –IC= 10mA 250 ——MHz
f = 100MHz
Collector-Base Capacitance CCBO –VCB = 5V, f = 100kHz ——4.5 pF
Emitter-Base Capacitance CEBO –VCB = 0.5V, f = 100kHz ——10 pF
Noise Figure NF –VCE =5V, –IC= 100µA, —— 4dB
RG=1kΩ, f =10...15000Hz
Input Impedance hie –VCE = 10V, –IC= 1mA 1—10 kΩ
f = 1kHz
Small Signal Current Gain hfe –VCE = 10V, –IC= 1mA, 100 —400 —
f = 1kHz
Voltage Feedback Ratio hre –VCE = 10V, –IC= 1mA, 0.5 • 10-4 —8 • 10-4 —
f = 1kHz
Output Admittance hoe –VCE = 1V, –IC= 1mA, 1—40 µS
f = 1kHz