1
MRF321MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
•Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•Gold Metallization System for High Reliability
•Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 33 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous
Collector Current — Peak IC1.1
1.5 Adc
Total Device Dissipation @ TA = 25°C (1)
Derate above 25°CPD27
160 Watts
mW/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 6.4 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0) V(BR)CEO 33 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0) V(BR)CES 60 — — Vdc
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0) V(BR)CBO 60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO — — 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 5.0 Vdc) hFE 20 — 80 —
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier .
Order this document
by MRF321/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
Motorola, Inc. 1994
MRF321
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 10 12 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) GPE 12 13 — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) η50 60 — %
Load Mismatch
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
ψNo Degradation in Output Power
Figure 1. 400 MHz Test Circuit Schematic
C1, C2, C3 — 1.0–20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C10 — 0.1 µF Erie Redcap
C7 — 0.5–10 pF Johanson Trimmer (JMC 5201)
C8 — 0.018 µF Vitramon Chip Capacitor
C9 — 200 pF UNELCO Capacitor
C11, C12 — 680 pF Feedthru
C13 — 1.0 µF, 50 Volt Tantalum Capacitor
D1 — 1N4001
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End of Coil
L2 — 4 Turns #20 Enamel, 1/8″ ID
L3 — 6 Turns #20 Enamel, 1/4″ ID
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω, 1/4 Watt
R2 — 120 Ω, 1.0 Watt
R3 — 20 Ω, 1/2 Watt
R4 — 47 Ω, 1/2 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon, εR = 2.56, t = 0.062″
Input/Output Connectors — Type N
R2 R3
D1 R4 C9
L1
L3
C10 C11
L4
C12 C13
+
–
+
–28 V
RF
OUTPUT
RF
INPUT Z1 Z2
Z3 Z4 C8
C1 C2 C3 C4 C5
R1
C6 C7
DUT
L2
+
–
5 V
3
MRF321MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Frequency Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency
P , OUTPUT POWER (WATTS)
out
12
f, FREQUENCY (MHz) 600
10
8
6
4
2500400300200100
P , OUTPUT POWER (WATTS)
out
12
Pin, INPUT POWER (mW)
10
8
6
4
23000 600 900 1200 1500
P , OUTPUT POWER (WATTS)
out
12
VCC, SUPPLY VOLTAGE (VOLTS)
10
8
6
4
21410 18 22 26 30
22
f, FREQUENCY (MHz)
18
500400300200
14
10
6
2
GPE, COMMON EMITTER AMPLIFIER
POWER GAIN (dB)
VCC = 28 V
Pin = 0.5 W
0.35 W
f = 400 MHz
Po = 10 W
VCC = 28 V
0.7 W
0.5 W
0.4 W
0.3 W
0.2 W
Pin = 1 W
0.1 W VCC = 28 V
400 500
f = 200 MHz
MRF321
4MOTOROLA RF DEVICE DATA
Figure 6. Series Equivalent Impedance
Zin
0
10
–10
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power,
ZOL* = voltage and frequency.
5
–5
f = 200 MHz
400
ZOL*
5
15
20
25
500
f = 200 MHz 400
500
Po = 10 W, VCC = 28 V
f
MHz Zin
Ohms ZOL*
Ohms
200
400
500
0.68 – j0.75
0.89 + j2.7
1.3 + j4.3
14.2 – j22
9.8 – j14.4
9.3 – j13
5
MRF321MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 244–04
ISSUE J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
K
D
AJ
T
FP
M
2
13
4
SEATING PLANE
8–32 NC 2A
WRENCH FLAT
U
E
B
SC
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A7.06 7.26 0.278 0.286
B6.20 6.50 0.244 0.256
C14.99 16.51 0.590 0.650
D5.46 5.96 0.215 0.235
E1.40 1.65 0.055 0.065
G1.52 ––– 0.060 –––
J0.08 0.17 0.003 0.007
K11.05 ––– 0.435 –––
M45 NOM 45 NOM
P––– 1.27 ––– 0.050
S3.00 3.25 0.118 0.128
T1.40 1.77 0.055 0.070
U2.92 3.68 0.115 0.145
_ _
MRF321
6MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MRF321/D
*MRF321/D*
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