Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Informatio
n
1/
SFT2369A2 _
_
_
_
│
│
│
│
│
└
Screening 2
/
_
_
= Commercial
TX= TX Level
TXV= TXV Level
S= S Level
└
Package G
W
= Gullwing
SFT2369A2
Series
Dual Microminiature Package
100 mA 15 Volts
Dual NPN Transistor
Features:
• High Speed Switching Transistor
• Suitable in chopper, UHF and RF application
• Multiple Devices Reduce Board Space
• Replacement for 2N2369AU
• TX, TXV, S-Level Screening Available 2/
Maxi mum R ating s Symbol Value Units
Collector – Emitter Voltage VCEO 15 Volts
Collector – Base Voltage VCBO 40 Volts
Emitter – Base Voltage VEBO 4.5 Volts
Continuous Collector Current IC 100 mA
Power Dissipation @ TA= 25ºC Per Device
Total PD 360
500 mW
Operating & Storage Temperature TOP & Tstg -65 to +200 ºC
Maximum Thermal Resistance (Junction to PCB) RθJ-PCB 350 ºC/W
Gullwin
g
(GW)
Tolerances:
.xx ±.01
.xxx ±.005
PIN 1
PIN 4
PIN 6
PIN 3
PIN 1
PIN 4
PIN 6
PIN 3
SSDI
.193
.015±.010
.040
±.010
.350
±.010
6x R.010 .033
3x .015
.010.107
.130
2x .050
(=.100)
6x .030
.107
.034
.125
6x .010
.025
5x R.018
.015
.035
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045B DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT2369A2
Series
Electrical Characteristic 4/ Symbol Min Max Units
Collector – Emitter Sustaining Voltage IC= 10 mA BVCEO 15 — Volts
Collector Cutoff Current VCE= 20 V, VBE= 0
V
VCE= 10 V, VBE= 0.25 V, T
A
= 125ºC ICEX —
0.4
30 µA
Collector Cutoff Current
VCB= 32 V
VCB= 40 V
VCB= 20 V, T
A
= 150ºC
ICBO —
0.2
10
30
µA
Emitter Cutoff Current VEB= 4.0 V
VEB= 4.5 V IEBO —
0.25
10 µA
DC Forward Current Transfer Ratio 5
/
V
CE= 0.35 V, IC=10mA
VCE= 0.40 V, IC= 30 mA
VCE= 1.0 V, IC= 10 mA
VCE= 1.0 V, IC= 100 mA
VCE= 1.0 V, I
C
= 10 mA, T
A
= -55ºC
HFE
40
30
40
20
20
120
120
120
120
—
Collector
–
Emitter Saturation Volta
g
e 5
/
IC=10mA, I
B=1.0 mA
IC= 30 mA, IB= 3.0 mA
IC= 100 mA, IB= 10 mA
IC= 10 mA, IB= 1.0 mA, T
A
= 125ºC
VCE(Sat)
—
—
—
—
0.20
0.25
0.45
0.30
Volts
Base
–
Emitter Saturation Volta
g
e 5
/
IC=10mA, I
B=1.0 mA
IC= 30 mA, IB= 3.0 mA
IC= 100 mA, IB= 10 mA
IC= 10 mA, IB= 1.0 mA, TA= -55ºC
IC= 10 mA, IB= 1.0 mA, T
A
= 125ºC
VBE(Sat)
0.7
—
0.8
—
0.59
0.85
0.9
1.2
1.02
—
Volts
Frequency Transition VCE= 20V, IC= 20mA, f= 100 MHz fT 500 1000 MHz
Output Capacitance VCE= 5 V, f= 1 MHz cob — 4.0 pF
Input Capacitance VCE= 0.5 V, f= 1 MHz cib — 5.0 pF
Switching Times Test Circuit per MIL-PRF-19500/317
ton
toff
ts
—
—
12
18
13
ns
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC.
5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2%
Available Part Numbers:
SFT2369A2GW
PIN ASSIGNMENT
Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6
GW Collector1 Base1 Emitter1 Collector2 Base2 Emitter2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0045B DOC
