ANAR BACK (TUNNEL) DIODES yh Frequency Detector Series (To 18 GHz) ULs hs ll FEATURES Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MiL-STD-19500 & 883 Capability MAXIMUM RATINGS Storage Temperature... ...... 65 fo +125C Operating Temperature ...... -65 to+110C PowerHandling.... . a, +17 dBm CW or 3 ERG spike Soldering Temperature... .. . 230C for 5 sec. ELECTRICAL SPECIFICATION @ 25C HIGH FREQUENCY SERIES (TO 18 GHz) Model Peak Ratio Reverse Forward Capacitance Series Voltage Video Outline Current I! ly Voltage Voltage Cr (pF) Resistance Sensitivity Resistance (other Ip (uA) p VrR(mV) Ve (mv) R, (Ohms) (mV/mW) R, (Ohms) packages available) Min. Max. Min. Min. Max. Max. Max. Typ. Typ. . MBD-1057-C18 100 200 2.5 420 135 0.30 7.0 1000 180 MBD-1057-T80 100 200 25 420 135 0.65 7.0 1000 180 MBD-1057-T54 100 200 2.5 420 135 0.55 7.0 1000 180 MBD-1057-H20 100 200 2.5 420 135 0.50 7.0 1000 180 MBD-1057-E26 100 200 2.5 420 135 0.40 7.0 1000 180 MBD-2057-C18 200 300 2.5 410 130 0.30 7.0 750 130 MBD.-2057-T80 200 300 2.5 410 130 0.65 7.0 750 130 MBD-2057-T54 200 300 2.5 410 130 0.55 7.0 750 130 MBD-2057-H20 200 300 2.5 410 . 130 0.50 7.0 750 130 MBD-2057-E26 200 300 2.5 410 130 0.40 7.0 750 130 MBD-3057-C18 300 400 2.5 400 125 0.33 7.0 500 80 MBD-3057-T80 300 400 2.5 400 125 0.70 7.0 500 80 MBD-3057-T54 300 400 2.5 400 125 0.60 7.0 500 80 MBD-3057-H20 300 400 2.5 400 125 0.55 7.0 500 80 MBD-3057-E26 300 400 2.5 400 125 0.45 7.0 500 80 MBD-4057-C18 400 500 2.5 400 120 0.35 6.5 275 65 MBD-4057-T80 400 500 2.5 400 120 0.75 6.5 275 65 MBD-4057-T54 400 500 2.5 400 120 0.65 6.5 275 65 MBD-4057-H20 400 500 2.5 400 120 0.60 6.5 275 65 MBD-4057-E26 400 500 2.5 400 120 6.50 6.5 275 65 MBD-5057-C18 500 600 2.5 400 110 0.40 6.5 250 60 MBD-5057-T80 500 600 2.5 400 110 0.80 6.5 250 60 MBD-5057-T54 500 600 2.5 400 110 0.70 6.5 250 60 MBD-5057-H20 500 600 2.5 400 110 0.65 6.5 250 60 MBD-5057-E26 500 600 2.5 400 110 0.55 6.5 250 60 Ip= Ilp=3mMA f=30MHz f=100 MHz f=10 GHz Test 500 vA Bias atVy IRp=10mMA R_=10 Kohm Condition Pin= ~20 dBm Untuned TYPICAL DETECTOR SENSITIVITY ( ) and VIDEO IMPEDANCE (R,) vs. PEAK CURRENT (Ip) f= 10 GHz, - 20 dBm, 50 ohm untuned broadband circuit, Rp = 10K@, 25C 1000 N 200 750 _ 150 a y 2 E 500 100 3 s . g E OY ~ Ry WN 250 50 0 0 0 100 200 300 400 500 Ip WA) TYPICAL DETECTOR OUTPUT VOLTAGE vs. INPUT POWER f= 10 GHz, R,.= 10K2, 50 ohm untuned circuit, 25C 300 200 100 MBD1057 S E 5 2 10 < J oO > Ee 5 a 5 o MBD4057 Q 5 M 1 0.1 ~40 -35 -30 -25 ~20 -15 - 10 -5 0 5 10 POWER IN (dBm) DC OUTPUT VOLTAGE (mv) 300 100 = oO 0.1 - 40 Ry VIDEO RESISTANCE (OHMS) TYPICAL R, vs. DRIVE LEVEL f= 10 GHz, 50 ohm untuned circuit, 25C 200 + MBD2057 Z 150 7 AN bP 100 | | A = BDS5057 yn o 30 35 -20 -10 0 +10 POWER INPUT (dBm) MBD2057 Vout VS. Pin for various load resistors t= 10 GHz, 50 ohm untuned circuit, 25C RL= 10K RL = 1KQ 1 R= 5008 -30 ~25 -20 -15 -10 -5 0 POWER IN (dBm) 10 MBD5057 Vour vs. Pin for various load resistors f= 10 GHz, 50 ohm untuned circuit, 25C DC OUTPUT VOLTAGE mv DC OUTPUT VOLTAGE (mV) 300 200 0.1 40 300 200 100 01 - 40 -35 -35 30 MBDS5057 Vout vs. Pin TEMPERATURE CURVES f= 10 GHz, 50 ohm untuned circuit -25 +,to0c ~+ 55C ~30 25 Ru=1 Ri = 10K l R, = 1002 -20 -15 ~10 POWER IN (dBm) R_ = 10KQ -20 -15 - 10 POWER IN (dBm) -5 -5 DC OUTPUT VOLTAGE (mV) MBD2057 Vout vs. Pin TEMPERATURE CURVES f= 10GHz, 50 ohm untuned circuit RL = 10KQ 200 + 100C I - -55C 100 0.1 ~40 -35 -30 -25 -20 -15 -10 -5 0 5 10 POWER IN dBm TYPICAL JUNCTION CAPACITANCE vs. PEAK CURRENT 0.4 0,35 0.3 G; (pF) TYP 0.25 0.2 100 200 300 400 500 600 PEAK CURRENT, Ip (uA) 10 GHz RF DETECTOR TEST CIRCUIT 502 MICROSTR IP TEST FIXTURE DUT RF 502 502 DETECTOR CH KH VOLTAGE INPUT AG a OUTPUT (} RETURN L Cy 20p COIL BACK DIODE PARAMETERS POLARITY: FOR DETECTOR APPLICATIONS HEAT SINK IS CATHODE DIE BONDING PAD IS ANODE CHIP CONFIGURATIO N C18 C17 dp 2 oh Q Co sa. |, 1 +> a) 1.0 2 TYP. 4 A typ. * yy Cc USE CENTPR PAD USE DESIGNATED PAD 1. Dimensions in mils 2. Thickness 4 to 6 mils 3. Pads and backside are goid 975 Stewart Drive Sunnyvale, California 94086 408-737-8181 DIODE EQUIVALENT CIACUIT oO fr. Ls J oss 2 Cy > Ry Cj Rs o AWA RAs + Rj Cr=Cp+C; @ 30 MHz CHIP ASSEMBLY The alloyed junction of the germanium planar tunnel (or back diode) is sensitive to mechanical pressure and high temperatures. Thus it must be handled as follows (as an example): Die attach: Epoxy only: less than 125C cure temperature recommended. Wire Bond: 160C base 160C capillary temperature, pressure less than 20 grams. A wedge bond is done on an off- set bonding pad. Bonding should not be done directly over the junction. Bond wire angle should leave small end of pad visually clear to assure junction is not bonded over. CAUTION: STATIC SENSITIVE DEVICES JUNCTION -0007 THERMOCOMPRESSION GOLD BOND WIRE WEDGE BOND FAX: 408-733-7645