1N3155A-1-3%TR - Microsemi Corp. - Datasheet.Directory

8.4 Volt Temperature Compensated Zener

Reference Diodes

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SCOTTSDALE DIVISION

1N3154 thru 1N3157, A, -1, e3

1N3154 - 1N3157A, e3

DESCRIPTION APPEARANCE

The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes

provides a selection of 8.4 V nominal voltages and temperature coefficients to

as low as 0.001 %/oC for minimal voltage change with temperature when

operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are

also available in JAN, JANTX, and JANTXV military qualifications. As a further

option for commercial product, they are available as RoHS Compliant with an

e3 suffix added to the part number. Microsemi also offers numerous other

Zener Reference Diode products for a variety of other voltages from 6.2 V to

200 V.

DO-7

(DO-204AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLIC ATIONS / BENEFITS

• JEDEC registered 1N3154 thru 1N3157A series

• Standard reference voltage of 8.4V +/- 5% with tighter

tolerances available

• 1N3154, 3155, 3156, and 3157 also have military

qualification to MIL-PRF-195 00/158 up to the

JANTXV level by addin g JAN, JANTX, or JANTXV

prefixes to part numbers as well as “-1” suffix, e.g.

JANTX1N3157-1, etc.

• Internal metallurgical bonds

• JANS Equivalent available via SCD

• Radiation Hard ened devices available by changing

1N prefix to RH, e.g. RH3156, RH3157, RH3157A,

etc. Also consult factory for “RH” data sheet

brochure

• RoHS Compliant devices available by adding an “e3”

suffix (not applicable to military)

• Provides minimal voltage changes over a broad

temperature range

• For instrumentation and other circuit designs

requiring a stable voltage reference

• Maximum temperature coefficient selection s

available from 0.01%/ºC to 0.001%/ºC

• Tight reference voltage tolerances at the 8.4 V

nominal is available by adding tolerance 1%, 2%,

3%, etc. after the part number for identification e.g.

1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.

• Flexible axial-lead mounting terminals

• Nonsensitive to ESD per MIL-STD-750 Method 1020

MAXIMUM RAT ING S MECHANICAL AND PACKAGING

• Operating & StorageTempera t ure: -65oC to +175oC

• DC Power Dissipation: 500 mW @ TL = 25oC and

maximum current IZM of 55 mA. NOTE: For optimum

voltage-temperature stabilit y, IZ = 10.0 mA (less than

90 mW in dissipated power)

• Solder temperatures: 260 oC for 10 s (maximum)

• CASE: Hermetically sealed glass case with DO-7

(DO-204AA) package

• TERMINALS: Tin-Lead (military) or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, Method 2026

• MARKING: Part number and cathode band

• POLARITY: Reference diode to be oper ated with the

banded end positive with respect to the opposite end

• TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• WEIGHT: 0.2 grams.

• See package dimensions on l ast page

Microsemi

Scottsdale Division Page 1

7-18-2005 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

8.4 Volt Temperature Compensated Zener

Reference Diodes

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N3154 thru 1N3157, A, -1, e3

1N3154 - 1N3157A, e3

*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified

ZENER

VOLTAGE

VZ @ IZT

(Note 1)

ZENER

TEST

CURRENT

IZT

MAXIMUM

ZENER

IMPEDANCE

(Note 2)

ZZT

MAXIMUM

REVERSE

CURRENT

IR @ 5.5 V

VOLTAGE

TEMPERATURE

STABILITY

(Note 3 & 4)

ΔVZT

MAXIMUM

TEMPERATURE

RANGE

EFFECTIVE

TEMPERATURE

COEFFICIENT

αVZ

JEDEC

TYPE

NUMBERS

(Notes 1, 5

& 6)

VOLTS mA OHMS μA mV oC %/oC

1N3154

1N3154A 8.00-8.80

8.00-8.80 10

10 15

15 10

10 130

172 -55 to +100

-55 to +150 0.01

0.01

1N3155

1N3155A 8.00-8.80

8.00-8.80 10

10 15

15 10

10 65

86 -55 to +100

-55 to +150 0.005

0.005

1N3156

1N3156A 8.00-8.80

8.00-8.80 10

10 15

15 10

10 26

34 -55 to +100

-55 to +150 0.002

0.002

1N3157

1N3157A 8.00-8.80

8.00-8.80 10

10 15

15 10

10 13

17 -55 to +100

-55 to +150 0.001

0.001

*JEDEC Registered Data.

NOTES:

1. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance,

e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.

2. Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25oC.

3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the

specified mV change at any discrete temperature between the established limits.

4. Voltage measurements to be performed 15 seconds after application of dc current.

5. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by

adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc.

6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A.

GRAPHS

The curve shown in Figure 1 is typical of the diode series and

greatly simplifies the estimation of the Temperature Coefficient

(TC) when the diode is operated at currents other than 10mA.

EXAMPLE: A diode in this series is operated at a current of

10mA and has specified Temperature Coefficient (TC) limits of

+/-0.005%/oC. To obtain the typical Temperature Coefficient

limits for this same diode operated at a current of 7.5mA, the

new TC limits (%/oC) can be estimated using the graph in

FIGURE 1.

At a test current of 7.5mA the change in Temperature Coefficient

(TC) is approximately –0.0012%.oC. The algebraic sum of +/-

0.005%oC and –0.0012%/oC gives the new estimated limits of

+0.0038%/oC and -0.0062%/oC.

Microsemi

Scottsdale Division Page 2

7-18-2005 REV B

Change in temperature coefficient (mV/oC)

Change in temperature coefficient (%/oC)

IZ – Operating Current (mA)

FIGURE 1

TYPICAL CHANGE OF TEMPERATURE COEFFICIENT

WITH CHANGE IN OPERATING CURRENT.

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

8.4 Volt Temperature Compensated Zener

Reference Diodes

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N3154 thru 1N3157, A, -1, e3

1N3154 - 1N3157A, e3

This curve in Figure 2 illustrates the change of

diode voltage arising from the effect of

impedance. It is in effect, an exploded view of

the zener operating region of the I-V

characteristic.

In conjunction with Figure 1, this curve can be

used to estimate total voltage regulation under

conditions of both varying temperature and

current.

ΔVZ – Change in Zener Voltage (mV)

Z – Operating Current (mA)

FIGURE 2

TYPICAL CHANGE OF ZENER VOLTAGE

WITH CHANGE IN OPERATING CURRENT.

DIMENSIONS

All dimensions in INCH

Microsemi

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7-18-2005 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503