Document Number: 90366 www.vishay.com
S11-1063-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ24S, SiHFZ24S)
• Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance
in any existing surface mount package. The D
2
PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application. The through-hole
version (IRFZ24L, SiHFZ24L) is available for low-profile
applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 400 μH, Rg = 25 , IAS = 17 A (see fig. 12).
c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.
PRODUCT SUMMARY
VDS (V) 60
RDS(on) ()V
GS = 10 V 0.10
Qg (Max.) (nC) 25
Qgs (nC) 5.8
Qgd (nC) 11
Configuration Single
D
2
PAK (TO-263)
GD
S
I
2
PAK (TO-262)
GDS
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFZ24S-GE3 SiHFZ24STRR-GE3 -
Lead (Pb)-free IRFZ24SPbF - IRFZ24LPbF
SiHFZ24S-E3 - SiHFZ24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
17
A
TC = 100 °C 12
Pulsed Drain Currenta, e IDM 68
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energyb, e EAS 100 mJ
Maximum Power Dissipation TC = 25 °C PD
60 W
TA = 25 °C 3.7
Peak Diode Recovery dV/dtc, e dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply