Document Number: 90366 www.vishay.com
S11-1063-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Advanced Process Technology
Surface Mount (IRFZ24S, SiHFZ24S)
Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
175 °C Operating Temperature
•Fast Switching
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance
in any existing surface mount package. The D
2
PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application. The through-hole
version (IRFZ24L, SiHFZ24L) is available for low-profile
applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 400 μH, Rg = 25 , IAS = 17 A (see fig. 12).
c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.
PRODUCT SUMMARY
VDS (V) 60
RDS(on) ()V
GS = 10 V 0.10
Qg (Max.) (nC) 25
Qgs (nC) 5.8
Qgd (nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
GD
S
I
2
PAK (TO-262)
GDS
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFZ24S-GE3 SiHFZ24STRR-GE3 -
Lead (Pb)-free IRFZ24SPbF - IRFZ24LPbF
SiHFZ24S-E3 - SiHFZ24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
17
A
TC = 100 °C 12
Pulsed Drain Currenta, e IDM 68
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energyb, e EAS 100 mJ
Maximum Power Dissipation TC = 25 °C PD
60 W
TA = 25 °C 3.7
Peak Diode Recovery dV/dtc, e dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 90366
2S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFZ24/SiHFZ24 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)aRthJA -40
°C/W
Maximum Junction-to-Case (Drain) RthJC -2.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mAc- 0.061 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V - - 25 μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 10 Ab- - 0.10
Forward Transconductance gfs VDS = 25 V, ID = 10 Ad5.5 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
- 640 -
pFOutput Capacitance Coss - 360 -
Reverse Transfer Capacitance Crss -79-
Total Gate Charge Qg
VGS = 10 V ID = 17 A, VDS = 48 V,
see fig. 6 and 13b, c
--25
nC Gate-Source Charge Qgs --5.8
Gate-Drain Charge Qgd --11
Turn-On Delay Time td(on)
VDD = 30 V, ID = 17 A,
Rg = 18 , RD = 1.7 , see fig. 10b, c
-13-
ns
Rise Time tr -58-
Turn-Off Delay Time td(off) -25-
Fall Time tf -42-
Internal Source Inductance LSBetween lead, and center of die contact - 7.5 - nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--17
A
Pulsed Diode Forward CurrentaISM --68
Body Diode Voltage VSD TJ = 25 °C, IS = 17 A, VGS = 0 Vb--1.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb, c - 88 180 ns
Body Diode Reverse Recovery Charge Qrr - 290 640 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
Document Number: 90366 www.vishay.com
S11-1063-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com Document Number: 90366
4S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 90366 www.vishay.com
S11-1063-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Pulse width 1 µs
Duty factor 0.1 %
RD
VGS
Rg
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
R
g
I
AS
0.01 W
t
p
D.U.T.
L
V
DS
+
-V
DD
10 V
Vary t
p
to obtain
required I
AS
IAS
VDS
VDD
VDS
tp
www.vishay.com Document Number: 90366
6S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 90366 www.vishay.com
S11-1063-Rev. C, 30-May-11 7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90366.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D.U.T. Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Document Number: 71195 www.vishay.com
Revison: 01-Nov-10 1
Package Information
Vishay Siliconix
TO-220AB
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
* M
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
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Revision: 12-Mar-12 1Document Number: 91000
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