Surface Mount Switching Diode
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr 6ns
*Small Outline Surface Mount SOT-323 Package
Features:
WEITRON
WEITRON
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SWITCHING DIODE
200-215m AMPERRES
70-75 VOLTS
BAS16W / BAV70W
BAW56W / BAV99W
SOT-323(SC-70)
1
2
3
Unit:mm
SOT-323 Outline Demensions
A
B
D
EG
M
L
H
J
T O P V IE W
K
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
SOT-323
WEITRON
Maximum Ratings (EACH DIODE)
Characteristic
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
Unit
Volts
Thermal Characteristics
Characteristic Symbol
Total Device Dissipation FR-5
Board *1, TA=25 C
Derate Above 25 C
Total Device Dissipation
Alumina Substrate*2 TA=25 C
Derate Above 25 C
PD
PD
Max Unit
BAS16W / BAV70W
BAW56W / BAV99W
Unit
BAS16W BAV70W BAW56W BAV99W
75 70
200 215
500
mAdc
mAdc
IF
IFM
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R JA
TJ, Tstg
200
1.6
625
300
2.4
417
-55 to + 150
mW
mW/ C
mW
mW/ C
C/W
C/W
C
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Electrical Characteristics (TA=25 C Unless Otherwise Note) (Each Diode)
Characteristic Symbol Min Max
Off Characteristics
µAdc
Reverse Breakdown Voltage BAS16W
µAdc
(IBR=100 ) BAV70W/BAW56W/BAV99W
Reverse Voltage Leakage Current
VR=75V
VR=70V
VR=25V, TJ=150 C
VR=25V, TJ=150 C
VR=75V, TJ=150 C
VR=70V, TJ=150 C
VR=70V, TJ=150 C
BAS16W
BAV70W/BAW56W/BAV99W
BAS16W/BAW56W/BAV99W
BAV70W
BAS16W
BAW56W/BAV99W
BAV70W
VBR
IR
75
70 Vdc
1.0
2.5
30.0
60.0
50.0
50.0
100.0
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q
R JA
q
WEITRON
BAS16W / BAV70W
BAW56W / BAV99W
Off Characteristic
Unit
Characteristic Symbol Min Max
Diode Capacition
(VR=0, f=1.0MHz)
BAS16W/BAW56W
BAV70W/BAV99W
Forward Voltage
(IF=1.0 mAdc)
(IF=10 mAdc)
(IF=50 mAdc)
(IF=150 mAdc)
Reverse Recovery Time (Figure 1.)
IF=IR=10 mAdc, VR=5.0Vdc
IR(REC)=1.0 mAdc, RL=100
CD
VF
trr
2.0
1.5
715
855
1000
1250
6.0
PF
mVdc
nS
Device Marking
Item Marking Eqivalent Circuit diagram
1
2
3
1
2
3
BAS16W
BAV70W
BAW56W
BAV99W
A6
A4
A1
A7 1
2
3
+10V
820
2.0K
100 µH
0.1µF
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IF
D.U.T.
0.1µF
VR
INPUT SIGNAL
trtp
10%
90%
tIF
IR
trr t
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
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31
WEITRON
BAS16W / BAV70W
BAW56W / BAV99W
02468
VR. REVERSW VOLTAGE (VOLTS)
CD. DIODE CAPACITANCE (PF)
1.00
0.90
0.80
0.70
0.60
FIGURE 5. CAPACITANCE (BAV70W)
02468
0.68
0.64
0.60
0.56
0.52
VR. REVERSE VOLTAGE (VOLTS)
CD. DIODE CAPACITANCE (PF)
FIGURE 4. CAPACITANCE(BAS16W)
0 2 4 6 8
VR. REVERSE VOLTAGE (VOLTS)
CD. DIODE CAPACITANCE (PF)
0.68
0.64
0.60
0.56
0.52
FIGUTRE 7. CAPACITANCE (BAV99W)
VR. REVERSE VOLTAGE (VOLTS)
CD. DIODE CAPACITANCE (PF)
FIGURE 6. CAPACITANCE(BAW56W)
02468
1.75
1.50
1.25
1.00
0.75
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0 10 20 30 40 50
VR. REVERSE VOLTAGE (VOLTS)
IA. REVERSE CURRENT (µA)
10
1.0
0.1
0.01
0.001
TA=150 C
TA=125 C
TA=25 C
TA=55 C
TA=85 C
FIGURE 3. LEAKAGE CURRENT
0.2 0.4 0.6 0.8 1.0 1.2
VF, FORWARD VOLTAGE (VOLTS)
100
10
1.0
0.1
IF, FORWARD CURRENT (mA)
FIGURE 2 .FORWARD VOLTAGE
TA=-40 C
TA=25 C
TA=85 C