BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BVCEO > 80V Ic = 1A High Continuous Collector Current ICM = 2.0A Peak Pulse Current Low Saturation Voltage VCE(sat) < 500mV @ 0.5A Epitaxial Planar Die Construction Complementary PNP types: BCX5316Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT89 Case: SOT89 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Leads, Solderable per MIL-STD-202 Method 208 Weight: 0.055 grams (Approximate) Applications Automotive Medium Power Switching or Amplification Applications AF Driver and Output Stages C E B C C B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product BCX5616QTA BCX5616QTC Notes: Compliance Automotive Automotive Marking BL BL Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information BL BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 BL = Product Type Marking Code 1 of 7 www.diodes.com May 2015 (c) Diodes Incorporated BCX5616Q Absolute Maximum Ratings (@ TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Peak Pulse Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value 100 80 6 1 2.0 100 200 Unit V V V A mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 8) (Note 6) (Note 7) (Note 8) Value PD RJA (Note 9) Unit 1 1.5 2.0 125 83 60 W C/W RJL 13 C/W TJ, TSTG -65 to +150 C ESD Ratings (Note 10) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper. 9. Thermal resistance from junction to solder-point (on the exposed collector pad). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 2 of 7 www.diodes.com May 2015 (c) Diodes Incorporated BCX5616Q 120 25mm x 25mm 1oz Cu Tamb = 25C 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (C/W) Thermal Characteristics and Derating Information 25mm x 25mm 1oz Cu Tamb = 25C 100 Single pulse 10 1 100 Max Power Dissipation (W) 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 1.0 1m Pulse Power Dissipation 25mm x 25mm 1oz Cu 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) 140.0 3 T amb=25C 120.0 100.0 80.0 1oz copper 60.0 40.0 Maximum Power (W) Thermal Resistance (C/W) Derating Curve 2oz copper 0 500 1000 1500 2000 2500 Copper Area (sqmm) BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 2oz copper 2 1oz copper 1 0 T amb=25C 0 500 1000 1500 2000 2500 Copper Area (sqmm) 3 of 7 www.diodes.com May 2015 (c) Diodes Incorporated BCX5616Q Electrical Characteristics (@ TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 100 -- -- V IC = 100A Test Condition Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage BVCEO BVEBO 80 6 -- -- -- -- -- V V -- -- -- 0.1 20 20 hFE 25 100 25 -- -- -- 250 - -- Collector-Emitter Saturation Voltage (Note 11) VCE(sat) -- -- 0.5 V IC = 10mA IE = 100A VCB = 30V VCB = 30V, TA = +150C VEB = 5V IC = 5mA, VCE = 2V IC = 150mA, VCE = 2V IC = 500mA, VCE = 2V IC = 500mA, IB = 50mA Base-Emitter Turn-On Voltage (Note 11) VBE(on) -- -- 1.0 V IC = 500mA, VCE = 2V Transition Frequency fT 150 -- - MHz Output Capacitance Cobo -- -- 25 pF Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Static Forward Current Transfer Ratio (Note 11) -- -- A nA IC = 50mA, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz 11. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. Note: IC, COLLECTOR CURRENT (A) 0.8 250 200 hFE, DC CURRENT GAIN 0.6 0.4 0.2 150 100 50 0 0 0 0.001 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 0.4 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 4 of 7 www.diodes.com 0.3 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current May 2015 (c) Diodes Incorporated 1.2 140 1.0 120 0.8 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) BCX5616Q 0.6 0.4 100 80 60 40 0.2 20 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 0.1 1 10 100 V R, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 300 250 200 150 100 VCE = 5V f = 100MHz 50 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 5 of 7 www.diodes.com May 2015 (c) Diodes Incorporated BCX5616Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D1 0 .20 R0 c SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.427 REF Z 0.30 REF All Dimensions in mm H E B1 L B e D2 8 (4X ) H1 E2 A L1 D z Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y1 Y4 X Y Dimensions Y3 C G X X1 X2 Y Y1 Y2 Y3 Y4 G Y2 X1 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 C BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 6 of 7 www.diodes.com May 2015 (c) Diodes Incorporated BCX5616Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com BCX5616Q Datasheet Number: DS37024 Rev. 2 - 2 7 of 7 www.diodes.com May 2015 (c) Diodes Incorporated