2011-06-14
1
BAR65...
Silicon PIN Diode
• Series diode for mobile communication in
low loss transmit-receiver switches
• Band switch for TV-tuners
• Very low forward resistance (typ. 0.65 Ω @ 5 mA)
• Low capacitance (typ. 0.5 pF @ 0V)
• Fast switching applications
• Pb-free (RoHS compliant) package
BAR65-02L
BAR65-02V
BAR65-03W
Type Package Configuration LS(nH) Marking
BAR65-02L*
BAR65-02V
BAR65-03W
TSLP-2-1
SC79
SOD323
single, leadless
single
single
0.4
0.6
1.8
NN
N
blue M
* Preliminary Data
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR30 V
Forward current IF100 mA
Total power dissipation
BAR65-02L, TS ≤ 128°C
BAR65-02V, TS ≤ 118°C
BAR65-03W, TS ≤ 113°C
Ptot
250
250
250
mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAR65-02L
BAR65-02V
BAR65-03W
RthJS
≤ 90
≤ 130
≤ 145
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
IR- - 20 nA
Forward voltage
IF = 100 mA
VF- 0.93 1 V
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 0 V, f = 100 MHz ... 1.8 GHz
CT
-
-
-
0.45
0.4
0.5
0.9
0.8
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
700
10
5
-
-
-
kΩ
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
1
0.65
0.56
-
0.95
0.9
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 80 - ns
I-region width WI- 3.5 - µm
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 5 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.08
0.06
0.05
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
ISO
-
-
-
12
7
5
-
-
-
1BAR65-02L in series configuration, Z = 50Ω
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BAR65...
Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
F
0.5
CT
1 MHz ... 1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
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Forward current IF = ƒ (TS)
BAR65-02L
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Forward current IF = ƒ (TS)
BAR65-03W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Forward current IF = ƒ (TS)
BAR65-02V
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
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Permissible Puls Load RthJS = ƒ (tp)
BAR65-02L
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR65-02L
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR65-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TS
0
10
1
10
2
10
IFmax/IFDC
D = 0
0,005
0,01
0,02
0,05
0,1
0,2
0,5
Permissible Puls Load RthJS = ƒ (tp)
BAR65-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TS
0
10
1
10
2
10
3
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
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BAR65...
Permissible Puls Load RthJS = ƒ (tp)
BAR65-03W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
2
10
3
10
mA
IF
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR65-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
°C
tp
0
10
1
10
mA
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BAR65-02L in series configuration, Z = 50Ω
0 0.5 1 1.5 2 GHz 3
f
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
dB
0
|S21|2
10 mA
5 mA
1 mA
0.1 mA
Isolation ISO = -|S21|2 = ƒ(f)
VR = Parameter
BAR65-02L in series configuration Z = 50Ω
0 0.5 1 1.5 2 GHz 3
f
-30
-25
-20
-15
-10
dB
0
|S21|2
0 V
1 V
10 V
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Package SC79
2011-06-14
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BAR65...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
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Package SOD323
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BAR65...
Package TSLP-2-1
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BAR65...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
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Life support devices or systems are intended to be implanted in the human body or
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reasonable to assume that the health of the user or other persons may be
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