BAR65... Silicon PIN Diode * Series diode for mobile communication in low loss transmit-receiver switches * Band switch for TV-tuners * Very low forward resistance (typ. 0.65 @ 5 mA) * Low capacitance (typ. 0.5 pF @ 0V) * Fast switching applications * Pb-free (RoHS compliant) package BAR65-02L BAR65-02V BAR65-03W Type BAR65-02L* BAR65-02V BAR65-03W Package TSLP-2-1 SC79 SOD323 Configuration single, leadless single single LS(nH) 0.4 0.6 1.8 Marking NN N blue M * Preliminary Data Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 V Forward current IF 100 mA Total power dissipation Ptot Value mW BAR65-02L, TS 128C 250 BAR65-02V, TS 118C 250 BAR65-03W, TS 113C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Unit C 2011-06-14 BAR65... Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BAR65-02L 90 BAR65-02V 130 BAR65-03W 145 Electrical Characteristics at T A = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - 0.93 1 V DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2011-06-14 BAR65... Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. AC Characteristics pF CT Diode capacitance VR = 1 V, f = 1 MHz - 0.45 0.9 VR = 3 V, f = 1 MHz - 0.4 0.8 VR = 0 V, f = 100 MHz ... 1.8 GHz - 0.5 k RP Reverse parallel resistance VR = 0 V, f = 100 MHz - 700 - VR = 0 V, f = 1 GHz - 10 - VR = 0 V, f = 1.8 GHz - 5 rf Forward resistance IF = 1 mA, f = 100 MHz - 1 - IF = 5 mA, f = 100 MHz - 0.65 0.95 IF = 10 mA, f = 100 MHz - 0.56 0.9 rr - 80 - ns I-region width WI - 3.5 - m Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB IF = 1 mA, f = 1.8 GHz - 0.08 - IF = 5 mA, f = 1.8 GHz - 0.06 - IF = 10 mA, f = 1.8 GHz - 0.05 - VR = 0 V, f = 0.9 GHz - 12 - VR = 0 V, f = 1.8 GHz - 7 - VR = 0 V, f = 2.45 GHz - 5 - Isolation1) 1BAR65-02L ISO in series configuration, Z = 50 3 2011-06-14 BAR65... Diode capacitance CT = (VR) Reverse parallel resistance RP = (VR) f = Parameter f = Parameter 10 4 0.5 KOhm 100 MHz F 10 3 1 MHz ... 1.8 GHz Rp CT 0.4 0.35 10 2 1 GHz 1.8 GHz 0.3 10 1 0.25 0.2 10 0 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = (IF) Forward current IF = (VF) f = 100MHz TA = Parameter 10 1 10 0 A 10 -1 Ohm rf IF 10 -2 10 0 10 -3 -40 C 25 C 85 C 125 C 10 -4 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2011-06-14 BAR65... Forward current IF = (TS ) Forward current IF = (TS ) BAR65-02L BAR65-02V 120 120 mA 100 100 90 90 80 80 IF IF mA 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 90 105 120 C 0 0 150 TS 15 30 45 60 75 90 105 120 C 150 TS Forward current IF = (TS ) BAR65-03W 120 mA 100 90 IF 80 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 150 TS 5 2011-06-14 BAR65... Permissible Puls Load RthJS = (t p) Permissible Pulse Load BAR65-02L IFmax / IFDC = (t p) BAR65-02L 10 2 10 1 RthJS IFmax/IFDC K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Puls Load RthJS = (t p) Permissible Pulse Load BAR65-02V IFmax / IFDC = (t p) BAR65-02V 10 2 IFmax/IFDC RthJS 10 3 10 2 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 10 0 -6 10 D=0 0,005 0,01 0,02 0,05 0,1 0,2 0,5 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 TS 10 -5 10 -4 10 -3 10 -2 s TS 6 2011-06-14 BAR65... Permissible Puls Load RthJS = (t p) Permissible Pulse Load BAR65-03W IFmax / IFDC = (t p) BAR65-03W 10 1 3 10 IFmax/IFDC mA IF 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 mA 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 C 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 tp C 10 1 tp Insertion loss IL = -|S21|2 = (f) Isolation ISO = -|S21 |2 = (f) IF = Parameter VR = Parameter BAR65-02L in series configuration, Z = 50 BAR65-02L in series configuration Z = 50 0 0 dB dB |S21|2 |S21|2 -0.1 -0.15 10 mA 5 mA 1 mA 0.1 mA -0.2 -0.25 -10 -15 0V 1V 10 V -20 -0.3 -25 -0.35 -0.4 0 0.5 1 1.5 2 GHz -30 0 3 f 0.5 1 1.5 2 GHz 3 f 7 2011-06-14 Package SC79 8 BAR65... 2011-06-14 BAR65... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 9 2011-06-14 Package SOD323 10 BAR65... 2011-06-14 Package TSLP-2-1 11 BAR65... 2011-06-14 BAR65... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2011-06-14