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H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3
April 2015
H11AA1M, H11AA4M
6-Pin DIP AC Input Phototransistor Optocouplers
Features
■
Bi-polar Emitter Input
■
Built-in Reverse Polarity Input Protection
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
AC Line Monitor
■
Unknown Polarity DC Sensor
■
Telephone Line Interface
Description
The H11AA1M and H11AA4M devices consist of two
gallium-arsenide infrared emitting diodes connected in
inverse parallel driving a single silicon phototransistor
output.
Schematic Package Outlines
Figure 2. Package Outlines
Figure 1. Schematic
1
2
6
5 COLLECTOR
4 EMITTER
BASE
3
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 2
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
V
PR
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 1360 V
peak
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 1594 V
peak
V
IORM
Maximum Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over-Voltage 6000 V
peak
External Creepage
≥
7mm
External Clearance
≥
7mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥
10 mm
DTI Distance Through Insulation (Insulation Thickness)
≥
0.5 mm
T
S
Case Temperature
(1)
175 °C
I
S,INPUT
Input Current
(1)
350 mA
P
S,OUTPUT
Output Power
(1)
800 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
> 10
9
Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 3
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ 25°C 270 mW
Derate Linearly From 25°C 2.94 mW/°C
EMITTER
I
F
Continuous Forward Current 60 mA
I
F
(pk) Forward Current – Peak (1 µs pulse, 300 pps) ±1.0 A
P
D
LED Power Dissipation @ 25°C 120 mW
Derate Linearly From 25°C 1.41 mW/°C
DETECTOR
I
C
Continuous Collector Current 50 mA
P
D
Detector Power Dissipation @ 25°C 150 mW
Derate linearity from 25°C 1.76 mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 4
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C Unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= ±10 mA 1.17 1.50 V
C
J
Capacitance V
F
= 0 V, f = 1.0 MHz 80 pF
DETECTOR
BV
CEO
Breakdown Voltage, Collector-to-Emitter I
C
= 1.0 mA, I
F
= 0 30 100 V
BV
CBO
Breakdown Voltage, Collector-to-Base I
C
= 100 µA, I
F
= 0 70 120 V
BV
EBO
Breakdown Voltage, Emitter-to-Base I
E
= 100 µA, I
F
= 0 5 10 V
BV
ECO
Breakdown Voltage, Emitter-to-Collector I
E
= 100 µA, I
F
= 0 7 10 V
I
CEO
Leakage Current, Collector-to-Emitter V
CE
= 10 V, I
F
= 0 1 50 nA
C
CE
Capacitance Collector to Emitter V
CE
= 0, f = 1 MHz 10 pF
C
CB
Collector to Base V
CB
= 0, f = 1 MHz 80 pF
C
EB
Emitter to Base V
EB
= 0, f = 1 MHz 15 pF
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
CTR
CE
Current Transfer Ratio,
Collector-to-Emitter I
F
= ±10 mA, V
CE
= 10 V H11AA1M 20 %
H11AA4M 100 %
Current Transfer Ratio,
Symmetry
I
F
= ±10 mA, V
CE
= 10 V
(Figure 13) All 0.33 3.00
V
CE(SAT)
Saturation Voltage,
Collector-to-Emitter I
F
= ±10 mA, I
CE
= 0.5 mA All 0.40 V
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.7 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 5
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Typical Performance Characteristics
Figure 4. Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
NORMALIZED CTR
Figure 5. Normalized CTR vs. Ambient Temperature
NORMALIZED CTR
TA – AMBIENT TEMPERATURE (°C)
Figure 7. CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Figure 6. CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Figure 3. Input Voltage vs. Input Current
VF – INPUT VOLTAGE (V)
I
F
– INPUT CURRENT (mA)
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
TA
= 25°C
IF = 2.5mA
IF = 20mA
IF = 10mA
IF = 5mA
-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0
-100
-80
-60
-40
-20
0
20
40
60
80
100
TA = 25°C
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5V
TA = 25°C
IF = 10 mA
IF = 5 m A
IF = 20mA
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 0.3 V
TA = 25°C
IF = 10 m A
IF = 5 m A
IF = 20 m A
-60 -40 -20 0 20 40 60 80 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 10 mA
VCE = 5 V
Normalized to IF = 10 mA , TA = 25°C
IF = 5 mA
IF = 20 mA
0 5 10 15 20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TA = 25°C
VCE = 5 V
Normalized to IF = 10 mA
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 6
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Typical Performance Characteristics
(Continued)
NORMALIZED t
on
– (t
on(R
BE
)
/ t
on(open)
)
Figure 10. Normalized ton vs. RBE
RBE- BASE RESISTANCE (kΩ)
Figure 9. Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
SWITCHING SPEED (μs)
NORMALIZED t
off
– (t
off(R
BE
)
/ t
off(open)
)
Figure 11. Normalized toff vs. RBE
RBE – BASE RESISTANCE (kΩ)
Figure 12. Dark Current vs. Ambient Temperature
TA – AMBIENT TEMPERATURE
(°C)
ICEO – COLLECTOR -EMITTER DARK CURRENT (nA)
VCE – COLLECTOR TO EMITTER VOLTAGE (V)
.01 .05 .1 .5 5110
NORMALIZED OUTPUT CURRENT
.01
.005
.05
0.1
0.5
1
5
10
Figure 13. Output Symmetry Characteristics
IF = I - 10 mA I
IF = I 10 mA I
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
IF = ±10 mA
10 100 1000 10000 100000
0
1
2
3
4
5
6
7
VCC = 10 V
IC = 2 mA
RL = 100 Ω
TA = 25°C
10 100 1000 10000 100000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCC = 10 V
IC = 2 m A
RL = 100 Ω
TA = 25°C
0.1 1 10 100
0.1
1
10
100
1000
IF = 10 mA
VCC = 10 V
TA = 25°C
Toff
Ton
Tr
Tf
0 20406080100
0.1
1
10
100
1000
10000
VCE = 10 V
VCE = 30 V
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 7
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Reflow Profile
Figure 14. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 245°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 8
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Ordering Information
Note:
2. The product orderable part number system listed in this table also applies to the
H11AA4M
device.
Marking Information
Figure 15. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
H11AA1M DIP 6-Pin Tube (50 Units)
H11AA1SM SMT 6-Pin (Lead Bend) Tube (50 Units)
H11AA1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
H11AA1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
H11AA1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
H11AA1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
H11AA1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “5”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
H11AA1
V X YY Q
1
2
6
43 5
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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