4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com Vishay Semiconductors
Rev. 1.2, 16-Jan-12 1Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, with Base Connection
DESCRIPTION
The 4N25 family is an Industry Standard Single Channel
Phototransistor Coupler. This family includes the 4N25, 4N26,
4N27, 4N28. Each optocoupler consists of gallium arsenide
infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5300 V
RMS
isolation test voltage. This isolation
performance is accomplished through special Vishay
manufacturing process.
Compliance to DIN EN 60747-5-2 (VDE 0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance available
for a commercial plastic phototransistor optocoupler.
The devices are also available in lead formed configuration
suitable for surface mounting and are available either on tape
and reel, or in standard tube shipping containers.
Note
For additional design information see application note 45
normalized curves
FEATURES
Isolation test voltage 5000 VRMS
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry standard dual-in-line 6-pin package
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
AGENCY APPROVALS
UL file no. E52744
cUL tested to CSA 22.2 bulletin 5A
DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
BSI: EN 60065, EN 60950-1
•FIMKO
•CQC
Notes
Additional options may be possible, please contact sales office.
(1) Also available in tubes; do not put T on end.
1
2
3
6
5
4
B
C
E
A
C
NC
i179004-14
ORDERING INFORMATION
4N2x-X0##T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, BSI, FIMKO 20 10
DIP-6 4N25-X000 - 4N27-X000 -
DIP-6, 400 mil, option 6 4N25-X006 4N26-X006 - -
SMD-6, option 7 4N25-X007T - 4N27-X007 -
SMD-6, option 9 4N25-X009T (1) 4N26-X009T (1) 4N27-X009T (1) 4N28-X009T (1)
VDE, UL, cUL, BSI, FIMKO 20 10
DIP-6 4N25-X001 4N26-X001 - 4N28-X001
DIP-6, 400 mil, option 6 4N25-X016 4N26-X016 - -
SMD-6, option 7 4N25-X017T (1) 4N26-X017T (1) 4N27-X017T -
7.62 mm 10.16 mm
> 8 mm 8 mm typ.
Option 7
Option 6
Option 9
DIP-6
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com Vishay Semiconductors
Rev. 1.2, 16-Jan-12 2Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF60 mA
Surge current t 10 μs IFSM 2.5 A
Power dissipation Pdiss 70 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V
Emitter base breakdown voltage VEBO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Output power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage VISO 5000 VRMS
Creepage distance 7mm
Clearance distance 7mm
Isolation thickness between emitter and
detector 0.4 mm
Comparative tracking index DIN IEC 112/VDE0303, part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (1) 2 mm from case, 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage (1) IF = 50 mA VF1.36 1.5 V
Reverse current (1) VR = 3.0 V IR0.1 100 μA
Capacitance VR = 0 V CO25 pF
OUTPUT
Collector base breakdown voltage (1) IC = 100 μA BVCBO 70 V
Collector emitter breakdown voltage(1) IC = 1.0 mA BVCEO 30 V
Emitter collector breakdown voltage (1) IE = 100 μA BVECO 7V
ICEO(dark) (1) VCE = 10 V, (base open)
4N25 5 50 nA
4N26 5 50 nA
4N27 5 50 nA
4N28 10 100 nA
ICBO(dark) (1) VCB = 10 V,
(emitter open) 2.0 20 nA
Collector emitter capacitance VCE = 0 CCE 6.0 pF
COUPLER
Isolation test voltage (1) Peak, 60 Hz VIO 5000 V
Saturation voltage, collector emitter ICE = 2.0 mA, IF = 50 mA VCE(sat) 0.5 V
Resistance, input output (1) VIO = 500 V RIO 100 GΩ
Capacitance, input output f = 1 MHz CIO 0.5 pF
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com Vishay Semiconductors
Rev. 1.2, 16-Jan-12 3Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Indicates JEDEC registered values.
Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Switching Times
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Voltage vs. Forward Current Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS)
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFVCE = 10 V, IF = 10 mA
4N25 CTRDC 20 50 %
4N26 CTRDC 20 50 %
4N27 CTRDC 10 30 %
4N28 CTRDC 10 30 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise time VCC = 5 V, IF = 10 mA, RL = 100 Ωtr2.0 μs
Fall time VCC = 5 V, IF = 10 mA, RL = 100 Ωtf2.0 μs
Channel I
Channel II
95 10804-3
R
G
= 50 Ω
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
F
0
50 ΩRL
I
F
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf) Turn-off time
96 11698
0.6
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.8
0.1 1 10 100
IF - Forward Current (mA)
V
F
- Forward Voltage (V)
Tamb = - 55 °C
1.5
0.7
Tamb = - 40 °C
Tamb = 100 °C
Tamb = 75 °C
Tamb = 50 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = - 25 °C
1.6
1.7
0
20
30
40
50
60
01 78
VCE - Collector Emitter Voltage (NS) (V)
I
C
- Collector Current (mA)
10
65432
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 5 mA
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com Vishay Semiconductors
Rev. 1.2, 16-Jan-12 4Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 6 - Leakage Current vs. Ambient Temperature
Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature
Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature
Fig. 9 - Normalized CTR (NS) vs. Forward Current
Fig. 10 - Normalized CTR (sat) vs. Forward Current
0
10
15
20
25
00.4
VCE - Collector Emitter Voltage (sat) (V)
I
C
- Collector Current (mA)
5
0.30.20.1
I
F
= 10 mA
I
F
= 25 mA
I
F
= 5 mA
I
F
= 2 mA
I
F
= 1 mA
0.001
0.01
0.1
10
1
100
1000
10 000
- 60 100
Tamb - Ambient Temperature (°C)
I
CE0
- Leakage Current (nA)
V
CE
= 40 V
- 40 806040200- 20
I
F
= 0 mA
V
CE
= 12 V
V
CE
= 24 V
0
0.2
0.6
0.4
0.8
1.0
1.2
- 60 100
Tamb - Ambient Temperature (°C)
CTR
Norm
- Normalized CTR (NS)
- 40 806040200- 20
IF = 5 mA
IF = 10 mA
IF = 1 mA
VCE = 5 V
0
0.2
0.6
0.4
0.8
1.0
1.2
- 60 100
Tamb - Ambient Temperature (°C)
CTR
Norm
- Normalized CTR (sat)
- 40 806040200- 20
IF = 5 mA
IF = 10 mA
IF = 1 mA
VCE = 0.4 V
0
0.2
0.6
0.4
0.8
1.0
1.2
0.1 100
IF - Forward Current (mA)
CTR
Norm
- Normalized CTR (NS)
110
Tamb = - 55 °C
Tamb = - 40 °C
Tamb = 0 °C
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 100 °C
VCE = 5 V
0
0.2
0.6
0.4
0.8
1.0
1.2
0.1 100
IF - Forward Current (mA)
CTR
Norm
- Normalized CTR (sat)
110
Tamb = - 55 °C
Tamb = - 40 °C
Tamb = 0 °C
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 100 °C
VCE = 0.4 V
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com Vishay Semiconductors
Rev. 1.2, 16-Jan-12 5Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - CTR Frequency vs. Phase Angle
Fig. 12 - CTR Frequency vs. Collector Current
Fig. 13 - Switching Time vs. Load Resistance
- 160
- 140
- 60
- 40
0
1 1000
f - Frequency (kHz)
Phase (deg)
- 20
10 100
V
CE
= 5 V
- 80
- 100
- 120
1
10
1000
0.1 100
IC - Collector Current (mA)
f
CTR
- CTR Frequency (kHz)
100
110
VCC = 5 V
0.1
1
10
1000
0.1 100
RL - Load Resistance (kΩ)
t
on
, t
off
- Switching Time (μs)
100
110
VCE = 5 V, IF = 10 mA
ton
toff
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com Vishay Semiconductors
Rev. 1.2, 16-Jan-12 6Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING
Notes
VDE logo is only marked on option 1 parts. Option information is not marked on the part.
Tape and reel suffix (T) is not part of the package marking.
22530
0.26
3.5 ± 0.3
7.62 ± 0.3
0.5 ± 0.1
2.54 ± 0.25
3.3 ± 0.5
6.5 ± 0.5
7.3 ± 0.5
7.62 to 9.98
1.1 ± 0.1
0.5 typ.
2.8 ± 0.5
4N26
V YWW 25
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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4N25-X000 4N25-X001 4N25-X006 4N25-X007T 4N25-X009 4N25-X009T 4N25-X016 4N25-X017 4N25-X017T
4N26-X000 4N26-X001 4N26-X006 4N26-X009 4N26-X009T 4N26-X016 4N26-X017 4N26-X017T 4N27-X000
4N27-X007 4N27-X009 4N27-X009T 4N27-X017T 4N28-X000 4N28-X001 4N28-X009 4N28-X009T