TOSHIBA TLP181 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP181 OFFICE MACHINE Unit in mm PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE 6 4 TELECOMMUNICATION l The TOSHIBA MINI FLAT COUPLER TLP181 is a small outline Oo . coupler, suitable for surface mount assembly. (| | 1 3 TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. 3.6 + 0.2 ~ 7.0+04 Oo wm 4 a wm A N ie @ Collector-Emitter Voltage : 80V (Min.) call s J Los ma Current Transfer Ratio : 50% (Min.) 2.58 Rank GB : 100% (Min.) e@ Isolation Voltage : 3750Vims (Min.) @ UL Recognized : UL1577, = TOSHIBA 11-4C1 Weight : 0.09g File No. E67349 @ Option (V4) type VDE Approved : VDE0884 satisfied pin CONFIGURATION (TOP VIEW) Maximum Operating Insulation Voltage : 565VpK Highest Permissible Over Voltage : 6000VpK def 30 rT 4 : ANODE : CATHODE : EMITTER : COLLECTOR . ao FW Re 961001EBC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to foreign exchange and foreign trade control laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-27 1/8TOSHIBA TLP181 CURRENT TRANSFER RATIO oLagsr CURRENT TRANSFER RATIO (%) TYPE FICATION | Tp=5mA, Vop=5V, Ta=25C | MARKING OF CLASSIFICATION *1 MIN. MAX. (None) 50 600 BLANK, Y, Y", G, G, B, B, GB Rank Y 50 150 y, y TLP181 Rank GR 100 300 G, Ga Rank BL 200 600 B, B Rank GB 100 600 G, GH, B, B, GB *1 : EX, Rank GB : TLP181 (GB) (Note) Application, type neme for certification test, please use standard product type name, i,e. TLP181 (GB) : TLP181 1998-02-27 2/8TOSHIBA TLP181 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF 50 mA Forward Current Detating Alp C 0.7 (Ta= 53C) mA /C A = Pulse Forward Current Ip 1 A 4 |)(100s pulse, 100pps) Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 80 Vv Emitter-Collector Voltage VECO 7 Vv 5 Collector Current Ic 50 mA | Collector Power Dissipation = (1 Circuit) Pe 150 mW | Collector Power Dissipation 5 5 Derating (1 Circuit Ta2 25C) APC /C 15 mW /C Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature T sol 260 (10s) C Total Package Power Dissipation Pp 200 mW Total Package Power Dissipation 3 3 Derating (Ta= 25C) APp/C 2.0 mW /C Isolation Voltage (AC, Imin., RH.<60%) (Note | BYS 3750 Vrms (Note 1) Device considered a two-terminal device : Pin 1, 3 shorted together and pins 4, 6 shorted together RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. TYP. MAX. | UNIT Supply Voltage Vcc 5 48 Vv Forward Current Ip 16 20 mA Collector Current Ic 1 10 mA Operating Temperature Topr 25 _ 85 C 1998-02-27 3/8TOSHIBA TLP181 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT a | Forward Voltage VR Ip=10mA 10 {115 | 138] V a Reverse Current IR VR=5V 10 | A Capacitance Cr V=0, f=1MHz 30 | pF Collector-Emitter Breakdown Voltage V (BR) CEO} Ic=0.5mA 80} 7 Vv Emitter-Collector S Breakdown Voltage V (BR) ECO} 1E=0.LmA 7) _ v 5 VcE=48V, (Ambient Light 0.01 0.1 A Below 1000 lx ) ~ | @ | ao | f | Collector Dark Current IcEO A VcE=48V, Ta=85C, (Ambient 2 50 A Light Below 1000 lx ) (4) | 0) | Capacitance an pe (Collector to Emitter) CCE V=0, f=1MHz _ 10) pr COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Ip=5mA, Vop=5V 50 | | 600 Current Transfer Ratio Iq/Ip Rank GB too | | 600 % Ip=1mA, Vog=04V 60 Saturated CTR I/IF (gat) Rank GB 30) ~ % Ic =2.4mA, Ip=8mA _ _ 0.4 Collector-Emitter Saturation Vv Vv Voltage CE (sat)| I=0.2mA, Ip=1mA | 02 | Rank GB 0.4 Off-State Collector Current | IC (off) VRF=0.7V, Vop=48V 1 10 | vA ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Capacitance C Vg=0V, f=1MHz 0.8 F (Input to Output) s sae t= . P Isolation Resistance Rg Vg=500V, R.H.=60% 1xX1017) 1044 | QO AC, 1 minute 3750} . Ds Vrms Isolation Voltage BVs AC, 1 second, in oil |10000; DC, 1 minute, in oil |10000| | Vae 1998-02-27 4/8TOSHIBA TLP181 SWICHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Rise Time ty 2 Fall Time te Vcc =10V, Ic =2mA 3 _ 5 Turn-on Time ton Ry, = 1000 3 M Turn-off Time toff _ 3 _ Turn-on Time toN . 2 S a t Ry =1.9kO (Fig.1) 25 s torage Time 8 Voc=5V, Ip=16mA = | 4 turn-off Time tOFF 40 _ Fig.l SWITCHING TIME TEST CIRCUIT Ipo weo VCC Re Ru ts L_oVop VCE f 4.5V 0.5V ton OFF 1998-02-27 5/8TOSHIBA TLP181 IF Ta Pc Ta Ex E fe a E 2 GE 1 oO g & a. ge BE ae eo Be Ee ee 2 as a 8 3 3 3 c < -20 0 20 40 60 g0 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Z Irp Dr 1 IF VF PULSE WIDTH< 1004s B Ta=25C ~ . = 1 E eI = > gE 1 6 a a me 2 5 = o 8 me Q z < 8 fe wa & 0.0 E 3 10% 3 107? 3 10% 38 10 25C DUTY CYCLE RATIO DR 0.001 0 0.4 0.8 1.2 1.6 2 FORWARD VOLTAGE Vp (V) AVE/ATa Ip IrFp VFP PULSE WIDTH= 10s FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mV/C) PULSE FORWARD CURRENT Ipp (mA) REPETITIVE FREQUENCY = 100Hz Ta=25C O 0.3 0.5 1 3 66 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6 3.0 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE VFp (V) 1998-02-27 6/8TOSHIBA TLP181 I VCE I VCE 30 ~ _ on. ~ Ta =25C 50mA q \s0mA Ta =25C g Ror . = Loo 40mA 2 2 1 Le 80m A 5mA 20) aa 4 E E i Lt 20mA f= Sy10ma & Vy |] an a e M7 10mA 4 5 PC (MAX.) 5 | & ~~ fe Y/) a ee : sma ~~ o 10 y A i 5mA _] pobm | 5 7 | | el ea Uf | amano 5 5 Ay a 2mA o 6 | A; aaa 0 2 4 6 8 10 % 0.2 0.4 06 0.8 1.0 COLLECTOR-EMITTER VOLTAGE Vcr (V) COLLECTOR-EMITTER VOLTAGE Vcr (V) Ic IF IcEO Ta i ~ 2 2 S es ro) 5 8 E = & o e pe SAMPLE B 5 5 a & o 5 a oO a Vor=10V wz Oo -==" Vop=5V x -= VoE=0.4V a 0.1 Z 0.1 0305 1 3 8 10 30 50 9 FORWARD CURRENT Ip (mA) 8 wy Q Ic/If Ip Ta=25C 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) SAMPLE A ~~ . SAMPLE B CURRENT TRANSFER RATIO Ic/Ip (%) _ Vcr=10V ---- VoE=5V . Vog=0.4V 1 al 0.305 1 3 5 10 30 50 FORWARD CURRENT Ip (mA) 1998-02-27 7/8TOSHIBA TLP181 Qo Oo COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Qo Oo (ys) SWITCHING TIME S = VCE (sat) Ta -40 -20 0 20 40 60 80 100 COLLECTOR CURRENT Ic (mA) AMBIENT TEMPERATURE Ta (C) 20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) SWITCHING TIME Ry, Ta=25C Ip=16mA Vcec=5v SWITCHING TIME Tg SWITCHING TIME (ys) Ip=16mA Voc=5V RL=1.9kQ 1 3. 5 10 30 50 100 90 0 20 40 60 80-100 LOAD RESISTANCE Ry, (&Q) AMBIENT TEMPERATURE Ta (C) 1998-02-27 8/8